RFM15N12 GESS | Alldatasheet

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OL Def 3875081 0018173 7 | . _ 3875081 GE SOLID STATE O1E 18173 Di T+37-1 Standard Power MOSFETs F3ILS RFM15N12, RFM15N15, RFP15N12, RFP15N15 File Number 1443 N-Channel Enhancement-Mode Power Field-Effect Transistors

15 A, 120 V— 150 V

Tos(on): 0.152 | Features: & SOA Is power-dissipation limited = Nanosecond switching speeds meen : High Inpor ieperacterstics N-Channel Enhancement Mode = Majority carrier device TERMINAL DESIGNATIONS RFMISN12 RFMIENIS Dean source wruanoey ‘The RFMI6N12 and RFMISN15 and the REP1SN12 and RFP15N15* are n-channel fenhancement-mode silicon-gate ATE ‘v2e8-37001 power field-effect transistors designed for applications Such as switching regulators, switching converters, motor SRDEC TO-204AA drivers, relay drivers, and drivers for high-power bipolar REPISNI2 ‘switching transistors requiring high speed and low gate- —-AFPISN1S: drive power. These types can be operated directly from — source integrated circuits. ena Lt ‘The RFM-types are supplied in the JEDEC TO-204AA steel «they Fo" Package and the RFP-types in the JEDEC TO-220A8 plastic = Package. a a en “The RFM and RFP series were formerly RCA developmental ror view sres-sosee numbers TA9195 and TA9230, respectively. JEDEC TO-22088 ~ RFMISN12 RFM15N15 RFPISN12 RFPISN1S: DRAIN-SOURCE VOLTAGE Voss. 120 150 120 150 v . DRAIN-GATE VOLTAGE (Ros=1 MQ) Voan - 120 160 120 150 v POWER DISSIPATION @ T=25°C Pr 100 100 7 5 w Derate above To=25°C. 0.80 0.80 06 0.6 wee OPERATING AND STORAGE 996

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3875081 GE SOLID STATE O1E 18174 D

RFM15N12, RFM15N15, RFP15N12, RFP15N15 ELECTRICAL CHARACTERISTICS At Case Temperature (T.) = 25°C unless otherwise specified TSF a 7-29, . twits / “3 AZ RFMISN12 | RFMISN15 TEST REPISNI2 | _RFPISN15 CHARACTERISTICS SYMBOL conpiTions | MIN. | MAX.| MIN. | MAX.| UNITS Drain-Source Breakdown Vollage [ omm | hatte | om | - [mo [- |v | Vos = Vos Gate Threshold Voulage pv | weet efe fel | Vos = 100 V Vos = 120 V Zero Gate Voltage Drain Current Ton 128°C Pn Vos = 100 V Vos = 120 V Drain-Source On Voltage Vos(on)* Noam 10¥ v T= 15 A Vos = 10V Static Drain-Source On Resistance ‘l= 75A os Vas = 10 V : ’ Vos = 10V Forward Transconductance Lo | lo = 7.5 A Le [-[ = [| me | | input Capacitance | Gs |S Mee = a5v | — | vr00| — | s700 | Output Capacitance J Gm] Vos=ov [= 750 | = T 750 | Reverse Transfer Capacitance f=imHz | — [aso [ — [350 | Turn-On Delay Time Voor76V | soityp) [76 _[so(typ.) | 75_| Turn-Off Delay Time | te(ott) | Reon = Ree = 50 0 | 7185(typ.)| 260 _|185(typ.)| “280 _| [raltime i id Mew tov ascyny| 160 [r250yp)] 160 ReMISNs | - [sa | - [25] ‘Thermal Resistance REMISN15 cow Junction-to-Case RFPISN12, 167 . RFPISN15: ‘ “Pulsed: Pulse duration = 300 ws max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [mits TEST RFMISNi2 REMISNIS | units, CONDITIONS REPiSN12 REP15N15 | min. Tmax. | min. Tmax. | [Diode ForwardVoltage | Veo | teo=SA | Ta | ne *Pulse Test: Width = 800 us, duty cycle = 2% a $$ 117

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RFM15N12, RFM15N15, RFP15N12, RFP15N15 J 3BI~ ‘ cn ae (cuaves wust se oentreD | Eessse sie eees=tt | . Few «LeSRpEEteN es SBI ES PU eS ie 2 onic oe eee ONCE © fee SEL U ns Sete Seal (4-2 ee SEE aah SET 1 0 EGS Se NS aah pM ee cse cbs ta call rina cete tae

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4) vpgs(MAX}sI80V RFMISNIS /RFRISNIS EETEEETEE -cresereseeestitH a a Ca ce ORAIN~70-80URCE VOLTAGE (¥pq) —V ‘vaca even . Fig. 1 — Maximum operating areas for al types. ea cae HEE oof EEE EET EERE EHP EPH CASE TEMPERATURE (To) ="C_ wwena u ‘ares: 3400 Fig. 2 — Power dissipation vs. case temperature derating curve Fig. 3 — Typical normalized gate threshold voltage as a function for all types. ‘of junction temperature for all types. PM cecerarnerteee titi eeeeu tenia Peg aavieeesiteli meee pect eect

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ARCTION TEMPERATURE CS ry = GATE-TO*SOURCE VOLTAGE (WosI—V soya, Fig. 4 - Normalized drain-to-source on resistance to junction tem- Fig. 5 — Typical transfer characteristics for ail types. perature for al types. IBN nr,

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RFM15N12, RFM15N15, RFP15N12, RFP15N15 iE aay j Ege = Fig. 6 - Normalized switching waveforms forconstantgate-current Fig. 7 — Typical saturation characteristics for all types. drive. . weieament al=a Ga o-20REE LIE Ciel = Fig. 8 - Typical drain-to-source on resistance as a function of Fig. 9 — Capacitance as a function of drain-to-source voltage for drain current for ail types. all types. Fig. 10 - Typical forward transconductance as a function of Fig. 11 — Switching Time Test Circuit drain current forall ypes. a . - wees teem eee = ns 119,