S2600B NJSEMI | Alldatasheet
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, Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 S2600B, S2600D, S2600M, S2600N High Voltage, Medium Current Silicon Controlled Rectifiers For Power Switching, Power Control and Ignition Applications Feature*:
- 800V, 125 Deg. C 7j Operating
- High dv/dt and di/dt Capability m Low Switching Losses
- High Pulse Current Capability
- Low Forward and Reverse Leakage
- S/pos Oxide Glass Multilayer Passivation System
- Advanced Unlsurface Construction m Precise Ion Implanted Diffusion Source TERMINAL DESIGNATIONS CATHODE-^® ©•J-ANOOE Vv --- S Low-Profile TO-205 VDRM VRRM IT (RMS) {To = 65° C) ITSM (for 1 full cycle) di/dt I'T (at 8.3 ms) (at 1.5ms) PGM (for 10/» max.) PG (av) (Averaging tirne 10ms max.) . TJ S2600B 200 200 S2600D S2600M 82600N 400 600 BOO V 400 600 800 V 7 A 4.5 A 100 A
200 A/pa
40 A*»
30 — A's 15 W 0.5 W 6510150 *C --65 to 125 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
S2600B, S2600D, S2600M, S2600N ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25° C Unlesi Otherwise Specified CHARACTERISTIC Repetitive Peak Forward and Reverse Blocking Current Rated VDRM and VRRM, Gate Open 8tTC = 125<>C Forward "On State" Voltage ITM = 30A Gate Trigger Current (dc) VD = 12Vdo RL = 30 Ohms Gate Trigger Voltage (dc) VD = 12 Vdc, RL = 30 Ohms VD = VDRM, RL = 500 Ohms, TC = 125°C Holding Current VD = 12 Vdc, IT (initial) = 200mA Critical Rate of Rise of Off-State Voltage (Exponential Waveform) TC = 125°C, Gate Open, VD = VDRM S2600B, S2600D S2600M S2600N Turn-On Time IT = 2A, VD - VDRM IG = 60mA Turn-Off Time VD = VDRM. TC = 75°C, dv/dt • ZOWfiS IT = 2Afor 50 u$, di/dt * 10A/pS IG « 80mA at Turn-On Thermal Resistance Junction to Case Junction to Ambient SYMBOL IDROM IRROM VTM IGT VGT IH dv/dt tgt tq RSJC RfiJA LIMITS S2600 FAMILY MIN. 0.2 E TYP. 1.8 150 125 1.2 MAX. 2.6 1.5 150 UNITS *»A mA V mA V mA V/uS MS x/s "C/W "iS* -n» ~BS71 ICO |2B JUNCTION TEWEWTIHE |TJ] -HegC SATE TRIGGER VOLTACE (V6TJ WWMtlZEO) 0 p 0 Q H H. M. ,QmJtB»mHiui.<Ii 9 -t "•^ 0 -S ~~~~- IB KTION VO-12V r as M 7 TEVEUTWE CfJI-lta ""^
- ^- 5 100 i gc Fig. 1 - Typlcil O»le Trigger Currant Vs. Temperature Fig- 2 • Typical Qttt Trigger Voltage Vs. Temperature