S1P2655A01 SAMSUNG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05 INTRODUCTION HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collector outputs. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout. Peak inrush currents to 600mA permit them to drive incandescent lamps. The S1P2655A01 is a general purpose array for use with DTL, TTL, PMOS or CMOS logic directly. The S1P2655A02 version does away with the need for any external discrete resistors, since each usit has a resistor and a zener diode in series with the input. The S1P2655A02 is designed for use with 14 to 25V PMOS devices. The zener diode also gives these devices excellent noise immunity. The S1P2655A03 has a series base resistor to each darlington pair, and thus allows operation directly with TTL or CMOS oper- ating at supply voltages of 5V. The S1P2655A03 will handle numberous interfaces needs-particularly those beyond the capailities of standard logic buffers. The S1P2655A04 has an appropriate input resistor to allow direct operation from CMOS or PMOS outputs operat- ing supply voltage of 6V to 15V. The S1P2655A05 is designed for use with standard TTL and Schottky TTL, with which hinger output currents are required and loading of the logic output is not a concern. These devices will sink a minimum of 350mA when driven from a “ totempole ” logic output. These versatile devices are useful for driving a wide range of loads including Solenoids, Relays, DC motors, LED displays, Filament lamps, thermal printheads and high power buffer. Applications requiriing sink currents beyonds the capability of a single output may be accomodated by paralleling the outputs.

APPLICATIONS

  • Relay driver
  • DC motor driver
  • Solenoids driver
  • LED display driver
  • Filament lamp driver
  • High power buffer
  • Thermal print head driver 16 −DIP 16 −SOP

S1P2655A01/02/03/04/05 LINEAR INTEGRATED CIRCUIT OPERAING INFORMATION ABSOLUTE MAXIMUM RATINGS (T a = 25 °C) Device Package Input Level Operating Temperature S1P2655A01-D0B0 16-DIP DTL, TTL, PMOS, CMOS −20 − +85 °C S1P2655A01-S0B0 16-SOP S1P2655A02-D0B0 16-DIP PMOS S1P2655A02-S0B0 16-SOP S1P2655A03-D0B0 16-DIP TTL, CMOS S1P2655A03-S0B0 16-SOP S1P2655A04-D0B0 16-DIP CMOS, PMOS S1P2655A04-S0B0 16-SOP S1P2655A05-D0B0 16-DIP TTL S1P2655A05-S0B0 16-SOP Characteristic Symbol Value Unit Output Voltage Vo 50 V Input Voltage (S1P2655A02/03/04) V IN 30 V (S1P2655A05) 15 Continuous Collector Current Ic 500 mA Continuous Input Current IIN 25 mA Power Dissipation P D 1.0 W Operating Temperature Topr − 20 − + 85 °C Storage Temperature Tstg − 55 − + 150 °C

LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05

ELECTRICAL CHARACTERISTICS

(Ta = 25 °C, unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Output Leakage Current ILK V CE = 50V, Ta = 25 °C, V IN = open − − 50 µA V CE = 50V, Ta = 70 °C, V IN = open − 100 V CE = 50V, Ta = 70 °C, V IN = 6.0V (S1P2655A02) − − 500 V CE = 50V, Ta = 70 °C, V IN = 1.0V (S1P2655A04) − − 500 Output Saturation Voltage Vsat IC = 100mA, I IN = 250 µA − 0.9 1.1 VIC = 200mA, I IN = 350 µA −− 1.1 1.3 IC = 350mA, I IN = 500 µA 1.25 1.6 Input Current 1 (Off Condition) IIN 1 IC = 500mA, Ta = 70 °C 50 65 − µA Input Current 2 (On Condition) IIN 2 V IN = 17V (S1P2655A02), Vo = open − 0.85 1.3 mA V IN = 3.85V (S1P2655A03), Vo = open − 0.93 1.35 V IN = 5V (S1P2655A04), Vo = open − 0.35 0.5 V IN = 12V (S1P2655A04), Vo = open − 1.0 1.45 V IN = 3.0V (S1P2655A05), Vo = open − 1.5 2.4 Input Voltage V IN V CE = 2.0V, Ic = 300mA (S1P2655A02) − − 13 V V CE = 2.0V, Ic = 200mA (S1P2655A03) − − 2.4 V CE = 2.0V, Ic = 250mA (S1P2655A03) − − 2.7 V CE = 2.0V, Ic = 300mA (S1P2655A03) − − 3.0 V CE = 2.0V, Ic = 125mA (S1P2655A04) − − 5.0 V CE = 2.0V, Ic = 200mA (S1P2655A04) − − 6.0 V CE = 2.0V, Ic = 275mA (S1P2655A04) − − 7.0 V CE = 2.0V, Ic = 350mA (S1P2655A04) − − 8.0 V CE = 2.0V, Ic = 350mA (S1P2655A05) − − 2.4 DC Current Gain h FE V CE = 2.0V, Ic = 350mA (S1P2655A05) 1000 − − − Input Capacitance C IN − − 15 30 pF Proparation Delay Time tON 0.5 V IN to 0.5 Vo − 0.25 1.0 µs tOFF 0.5 V IN to 0.5 Vo − 0.25 1.0 µs Clamp Diode Leakage Current IR V IN = open, Vo = GND, V R = 50V, Ta = 25 °C − − 50 µA V IN = open, Vo = GND, V R = 50V, Ta = 70 °C − − 100 µA Clamp Diode Forward Voltage V F IF = 350mA − 1.7 2.0 V

S1P2655A01/02/03/04/05 LINEAR INTEGRATED CIRCUIT PIN CONFIGURATION Figure 1.