S128

S128_V01 RENESAS | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 108

Technical content

Features

■ Arm Cortex-M0+ Core  Arm®v6-M architecture  Maximum operating frequency: 32 MHz  Arm® Memory Protection Unit (Arm MPU) with 8 regions  Debug and Trace: DWT, BPU, CoreSight™ MTB-M0+  CoreSight Debug Port: SW-DP ■ Memory  Up to 256-KB code flash memory  4-KB data flash memory (100,000 erase/write cycles)  Up to 24-KB SRAM  Memory protection units  128-bit unique ID ■ Connectivity  USB 2.0 Full-Speed (USBFS) module - On-chip transceiver with voltage regulator - Compliant with USB Battery Charging Specification 1.2  Serial Communications Interface (SCI) × 3 - UART - Simple IIC - Simple SPI  Serial Peripheral Interface (SPI) × 2  I 2C bus interface (IIC) × 2  Controller Area Network (CAN) module  Digital Addressable Lighting Interface (DALI) ■ Analog  14-bit A/D Converter (ADC14)  8-bit D/A Converter (DAC8) × 3  High-Speed Analog Comparator (ACMPHS) × 3  Low-Power Analog Comparator (ACMPLP) × 2  Operational Amplifier (OPAMP) × 4  Temperature Sensor (TSN) ■ Timers  General PWM Timer 32-bit (GPT32)  General PWM Timer 16-bit High Resolution (GPT16H) × 3  General PWM Timer 16-bit (GPT16) × 3  Low Power Asynchronous General-Purpose Timer (AGT) × 2  Watchdog Timer (WDT) ■ Safety  Error Correction Code (ECC) in SRAM  SRAM parity error check  Flash area protection  ADC self-diagnosis function  Clock Frequency Accuracy Measurement Circuit (CAC)  Cyclic Redundancy Check (CRC) calculator  Data Operation Circuit (DOC)  Port Output Enable for GPT (POEG)  Independent Watchdog Timer (IWDT)  GPIO readback level detection  Register write protection  Main oscillator stop detection  Illegal memory access ■ System and Power Management  Low power modes  Realtime clock (RTC)  Event Link Controller (ELC)  Data Transfer Controller (DTC)  Key Interrupt Function (KINT)  Power-on reset  Low Voltage Detection (LVD) with voltage settings ■ Security and Encryption  AES128/256  True Random Number Generator (TRNG) ■ Human Machine Interface (HMI)  Capacitive Touch Sensing Unit (CTSU) ■ Multiple Clock Sources  Main clock oscillator (MOSC) (1 to 20 MHz when VCC = 2.4 to 5.5 V) (1 to 8 MHz when VCC = 1.8 to 5.5 V) (1 to 4 MHz when VCC = 1.6 to 5.5 V)  Sub-clock oscillator (SOSC) (32.768 kHz)  High-speed on-chip oscillator (HOCO) (24, 32, 48, 64 MHz when VCC = 2.4 to 5.5 V) (24, 32, 48 MHz when VCC = 1.8 to 5.5 V) (24, 32 MHz when VCC = 1.6 to 5.5 V)  Middle-speed on-chip oscillator (MOCO) (8 MHz)  Low-speed on-chip oscillator (LOCO) (32.768 kHz)  IWDT-dedicated on-chip oscillator (15 kHz)  Clock trim function for HOCO/MOCO/LOCO  Clock out support ■ General Purpose I/O Ports  Up to 53 input/output pins - Up to 3 CMOS input - Up to 50 CMOS input/output - Up to 5V tolerant input/output - Up to 2 high current (20 mA) ■ Operating Voltage  VCC: 1.6 to 5.5 V ■ Operating Temperature and Packages  Ta = -40°C to +85°C - 36-pin LGA (4 mm × 4 mm, 0.5 mm pitch)  Ta = -40°C to +105°C - 64-pin LQFP (10 mm × 10 mm, 0.5 mm pitch) - 48-pin LQFP (7 mm × 7 mm, 0.5 mm pitch) - 32-pin LQFP (7 mm × 7 mm, 0.8 mm pitch) - 48-pin QFN (7 mm × 7 mm, 0.5 mm pitch) - 32-pin QFN (5 mm × 5 mm, 0.5 mm pitch) Ultra low power 32-MHz Arm® Cortex®-M0+ core, up to 256-KB code flash memory, 24-KB SRAM, Digital Addressable Lighting Interface, Capacitive Touch Sensing Unit, 14-bit A/D Converter, 8-bit D/A Converter, security and safety features. S128 Microcontroller Group Datasheet Rev.1.20 Oct 31, 2024

R01DS0309EU0120 Rev.1.20 Page 2 of 108 Oct 31, 2024 S128 Datasheet 1. Overview 1. Overview The MCU integrates multiple series of software- and pin-compatible Arm®-based 32-bit cores that share a common set of Renesas peripherals to facilitate design scalability and efficient platform-based product development. The MCU in this series incorporates an energy-efficient Arm Cortex®-M0+ 32-bit core that is particularly well suited for cost-sensitive and low-power applications, with the following features:  Up to 256 KB code flash memory  24-KB SRAM  Capacitive Touch Sensing Unit (CTSU)  14-bit A/D Converter (ADC14)  8-bit D/A Converter (DAC8)  Security features.

1.1 Function Outline

Table 1.1 Arm core Feature Functional description Arm Cortex-M0+ core  Maximum operating frequency: up to 32 MHz  Arm Cortex-M0+ core: - Revision: r0p1-00rel0 - Armv6-M architecture profile - Single-cycle integer multiplier.  Arm Memory Protection Unit (Arm MPU) - Armv6 Protected Memory System Architecture - 8 protect regions.  SysTick timer - Driven by SYSTICCLK (LOCO) or ICLK. Table 1.2 Memory Feature Functional description Code flash memory Maximum 256 KB of code flash memory. See section 42, Flash Memory in Userʼs Manual. Data flash memory 4 KB of data flash memory. See section 42, Flash Memory in Userʼs Manual. Option-setting memory The option-setting memory determines the state of the MCU after a reset. See section 6, Option-Setting Memory in Userʼs Manual. SRAM On-chip high-speed SRAM with either parity bit or Error Correction Code (ECC). See section 41, SRAM in Userʼs Manual. Table 1.3 System (1 of 2) Feature Functional description Operating mode Two operating modes:  Single-chip mode  SCI boot mode. See section 3, Operating Modes in Userʼs Manual.

R01DS0309EU0120 Rev.1.20 Page 3 of 108 Oct 31, 2024 S128 Datasheet 1. Overview Resets 13 resets:  RES pin reset  Power-on reset  Independent watchdog timer reset  Watchdog timer reset  Voltage monitor 0 reset  Voltage monitor 1 reset  Voltage monitor 2 reset  SRAM parity error reset  SRAM ECC error reset  Bus master MPU error reset  Bus slave MPU error reset  CPU stack pointer error reset  Software reset. See section 5, Resets in Userʼs Manual. Low Voltage Detection (LVD) The Low Voltage Detection (LVD) monitors the voltage level input to the VCC pin, and the detection level can be selected using a software program. See section 7, Low Voltage Detection (LVD) in Userʼs Manual. Clock  Main clock oscillator (MOSC)  Sub-clock oscillator (SOSC)  High-speed on-chip oscillator (HOCO)  Middle-speed on-chip oscillator (MOCO)  Low-speed on-chip oscillator (LOCO)  IWDT-dedicated on-chip oscillator  Clock out support. See section 8, Clock Generation Circuit in Userʼs Manual. Clock Frequency Accuracy Measurement Circuit (CAC) The Clock Frequency Accuracy Measurement Circuit (CAC) counts pulses of the clock to be measured (measurement target clock) within the time generated by the clock to be used as a measurement reference (measurement reference clock), and determines the accuracy depending on whether the number of pulses is within the allowable range. When measurement is complete or the number of pulses within the time generated by the measurement reference clock is not within the allowable range, an interrupt request is generated. See section 9, Clock Frequency Accuracy Measurement Circuit (CAC) in Userʼs Manual. Interrupt Controller Unit (ICU) The Interrupt Controller Unit (ICU) controls which event signals are linked to the NVIC/DTC module. The ICU also controls NMI interrupts. See section 12, Interrupt Controller Unit (ICU) in Userʼs Manual. Key Interrupt Function (KINT) A key interrupt can be generated by setting the Key Return Mode Register (KRM) and inputting a rising or falling edge to the key interrupt input pins. See section 18, Key Interrupt Function (KINT) in Userʼs Manual. Low Power Mode Power consumption can be reduced in multiple ways, such as by setting clock dividers, stopping modules, selecting power control mode in normal operation, and transitioning to low power modes. See section 10, Low Power Modes in Userʼs Manual. Register Write Protection The register write protection function protects important registers from being overwritten because of software errors. See section 11, Register Write Protection in Userʼs Manual. Memory Protection Unit (MPU) Four Memory Protection Units (M PUs) and a CPU stack pointer monitor function are provided for memory protection. See section 14, Memory Protection Unit (MPU) in Userʼs Manual. Watchdog T imer (WDT) The Watchdog Timer (WDT) is a 14-bit down-counter that can be used to reset the MCU when the counter underflows because the system has run out of control and is unable to refresh the WDT. In addition, a non-maskable interrupt or interrupt can be generated by an underflow. The refresh-permitted period can be set to refresh the counter and used as the condition for detecting when the system runs out of control. See section 24, Watchdog Timer (WDT) in Userʼs Manual. Independent Watchdog Timer (IWDT) The Independent Watchdog Timer (IWDT) consists of a 14-bit down-counter that must be serviced periodically to prevent counter underflow. The IWDT provides functionality to reset the MCU or to generate a non-maskable interrupt/interrupt for a timer underflow. Because the timer operates with an independent, dedicated clock source, it is particularly useful in returning the MCU to a known state as a fail safe mechanism when the system runs out of control. The IWDT can be triggered automatically on a reset, underflow, refresh error, or by a refresh of the count value in the registers. See section 25, Independent Watchdog Timer (IWDT) in Userʼs Manual. Table 1.3 System (2 of 2) Feature Functional description

R01DS0309EU0120 Rev.1.20 Page 4 of 108 Oct 31, 2024 S128 Datasheet 1. Overview Table 1.4 Event Link Feature Functional description Event Link Controller (ELC) The Event Link Controller (ELC) uses the interrupt requests generated by various peripheral modules as event signals to connect them to different modules, enabling direct interaction between the modules without CPU intervention. See section 16, Event Link Controller (ELC) in Userʼs Manual. Table 1.5 Direct memory access Feature Functional description Data Transfer Controller (DTC) A Data Transfer Controller (D TC) module is provided for transferring data when activated by an interrupt request. See section 15, Data Transfer Controller (DTC) in Userʼs Manual. Table 1.6 Timers Feature Functional description General PWM Timer (GPT) The General PWM Timer (GPT) is a 32-bit timer with one channel and a 16-bit timer with six channels. PWM waveforms can be generated by controlling the up-counter, down-counter, or the up- and down-counter. In addition, PWM waveforms can be generated for controlling brushless DC motors. The GPT can also be used as a general-purpose timer. See section 20, General PWM Timer (GPT) in Userʼs Manual. Port Output Enable for GPT (POEG) Use the Port Output Enable for GPT (POEG) function to place the General PWM Timer (GPT) output pins in the output disable state. See section 19, Port Output Enable for GPT (POEG) in Userʼs Manual. Low Power Asynchronous General Purpose Timer (AGT) The Low Power Asynchronous General Purpose Timer (AGT) is a 16-bit timer that can be used for pulse output, external pulse width or period measurement, and counting external events. This 16-bit timer consists of a reload register and a down-counter. The reload register and the down-counter are allocated to the same address, and they can be accessed with the AGT register. See section 22, Low Power Asynchronous General Purpose Timer (AGT) in Userʼs Manual. Realtime Clock (RTC) The Realtime Clock (RTC) has two counting modes, calendar count mode and binary count mode, that are controlled by the register settings. For calendar count mode, the RTC has a 100-year calendar from 2000 to 2099 and automatically adjusts dates for leap years. For binary count mode, the RTC counts seconds and retains the information as a serial value. Binary count mode can be used for calendars other than the Gregorian (Western) calendar. See section 23, Realtime Clock (RTC) in Userʼs Manual. Table 1.7 Communication interfaces (1 of 2) Feature Functional description Serial Communications Interface (SCI) The Serial Communication Interface (SCI) is configurable to five asynchronous and synchronous serial interfaces:  Asynchronous interfaces (UART and asynchronous communications interface adapter (ACIA))  8-bit clock synchronous interface  Simple IIC (master-only)  Simple SPI  Smart card interface. The smart card interface complies with the ISO/IEC 7816-3 standard for electronic signals and transmission protocol. SCI0 has FIFO buffers to enable continuous and full-duplex communication, and the data transfer speed can be configured independently using an on-chip baud rate generator. See section 27, Serial Communications Interface (SCI) in Userʼs Manual. Digital Addressable Lighting Interface (DALI) A Digital Addressable Lighting Interface (DALI) module is provided. DALI is an international open lighting control communication protocol that includes dimming control of electronic ballasts and LED lights from different manufacturers. The DALI interface module is designed to allow compliance with international standard IEC62386-101 Edition 1.0/2.0 (DALI 2), that includes software control. See section 28, Digital Addressable Lighting Interface (DALI) in Userʼs Manual.

R01DS0309EU0120 Rev.1.20 Page 5 of 108 Oct 31, 2024 S128 Datasheet 1. Overview I2C bus interface (IIC) The 2-channel I2C bus interface (IIC) conforms with and provides a subset of the NXP I2C (Inter-Integrated Circuit) bus interface functions. See section 29, I2C Bus Interface (IIC) in Userʼs Manual. Serial Peripheral Interface (SPI) Two independent Serial Periph eral Interface (SPI) channels are capable of high-speed, full- duplex synchronous serial communications with multiple processors and peripheral devices. See section 31, Serial Peripheral Interface (SPI) in Userʼs Manual. Control Area Network (CAN) module The Controller Area Network (C AN) module provides functionality to receive and transmit data using a message-based protocol between multiple slaves and masters in electromagnetically noisy applications. The CAN module complies with the ISO 11898-1 (CAN 2.0A/CAN 2.0B) standard and supports up to 32 mailboxes, which can be configured for transmission or reception in normal mailbox and FIFO modes. Both standard (11-bit) and extended (29-bit) messaging formats are supported. See section 30, Controller Area Network (CAN) Module in Userʼs Manual. USB 2.0 Full-Speed (USBFS) module The USB 2.0 Full-Speed (USBFS) module is a USB controller that can operate as a device controller. The module supports full-speed and low-speed transfer as defined in the Universal Serial Bus Specification 2.0. The module has an internal USB transceiver and supports all of the transfer types defined in the Universal Serial Bus Specification 2.0. The USB has buffer memory for data transfer, providing a maximum of 5 pipes. Pipe 0 and pipe 4 to pipe 7 can be assigned any endpoint number based on the peripheral devices used for communication or based on the user system. The MCU supports Battery Charging Specification revision 1.2. Because the MCU can be powered at 5 V, the USB LDO regulator provides the internal USB transceiver power supply 3.3 V. See section 26, USB 2.0 Full-Speed Module (USBFS) in Userʼs Manual. Table 1.8 Analog Feature Functional description 14-bit A/D Converter (ADC14) A 14-bit succ essive approximation A/D converter is provided. Up to 21 analog input channels are selectable. Temperature sensor output and internal reference voltage are selectable for conversion. The A/D conversion accuracy is selectable from 12-bit and 14-bit conversion making it possible to optimize the tradeoff between speed and resolution in generating a digital value. See section 33, 14-Bit A/D Converter (ADC14) in Userʼs Manual. 8-bit D/A Converter (DAC8) An 8-bit D/A converter (DAC8) is provided. See section 34, 8-Bit D/A Converter (DAC8) in Userʼs Manual. Temperature Sensor (TSN) The on-chip temperature sensor determines and monitors the die temperature for reliable operation of the device. The sensor outputs a voltage directly proportional to the die temperature, and the relationship between the die temperature and the output voltage is linear. The output voltage is provided to the ADC14 for conversion and can be further used by the end application. See section 35, Temperature Sensor (TSN) in Userʼs Manual. High-Speed Analog Comparator (ACMPHS) The analog comparator compares a test voltage with a reference voltage and to provide a digital output based on the result of conversion. Both the test voltage and the reference voltage can be provided to the ACMPHS from internal sources (D/A converter output) and an external source. Such flexibility is useful in applications that require go/no-go comparisons to be performed between analog signals without necessarily requiring A/D conversion. See section 37, High- Speed Analog Comparator (ACMPHS) in Userʼs Manual. Low-Power Analog Comparator (ACMPLP) The analog comparator compares a reference input voltage and analog input voltage. The comparison result can be read by software and also be output externally. The reference input voltage can be selected from either an input to the CMPREFi (i = 0, 1) pin, an output from internal D/A converter, or from the internal reference voltage (Vref) generated internally in the MCU. The ACMPLP response speed can be set before starting an operation. Setting high-speed mode decreases the response delay time, but increases current consumption. Setting low- speed mode increases the response delay time, but decreases current consumption. See section 38, Low-Power Analog Comparator (ACMPLP) in Userʼs Manual. Operational Amplifier (OPAMP) The opera tional amplifier amplifies small analog input voltages and outputs the amplified voltages. A total of four differential operational amplifier units with two input pins and one output pin are provided. See section 36, Operational Amplifier (OPAMP) in Userʼs Manual. Table 1.7 Communication interfaces (2 of 2) Feature Functional description

R01DS0309EU0120 Rev.1.20 Page 6 of 108 Oct 31, 2024 S128 Datasheet 1. Overview Table 1.9 Human machine interfaces Feature Functional description Capacitive Touch Sensing Unit (CTSU) The Capacitive Touch Sensing Unit (CTSU) measures the electrostatic capacitance of the touch sensor. Changes in the electrostatic capacitance are determined by software, which enables the CTSU to detect whether a finger is in contact with the touch sensor. The electrode surface of the touch sensor is usually enclosed with an electrical insulator so that a finger does not come into direct contact with the electrode. See section 39, Capacitive Touch Sensing Unit (CTSU) in Userʼs Manual. Table 1.10 Data processing Feature Functional description Cyclic Redundancy Check (CRC) Calculator The CRC calculator generates CRC codes to detect errors in the data. The bit order of CRC calculation results can be switched for LSB-first or MSB-first communication. Additionally, various CRC generation polynomials are available. The snoop function allows monitoring reads from and writes to specific addresses. This function is useful in applications that require CRC code to be generated automatically in certain events, such as monitoring writes to the serial transmit buffer and reads from the serial receive buffer. See section 32, Cyclic Redundancy Check (CRC) Calculator in Userʼs Manual. Data Operation Circuit (DOC) The Data Op eration Circuit (DOC) compares, adds, and subtracts 16-bit data. See section 40, Data Operation Circuit (DOC) in Userʼs Manual. Table 1.11 Security Feature Functional description AES See section 43, AES Engine in Userʼs Manual. True Random Number Generator (TRNG) See section 44, True Random Number Generator (TRNG) in Userʼs Manual. Table 1.12 I/O ports Feature Functional description I/O ports  I/O ports for the 64-pin LQFP, 64-pin QFN - I/O pins: 50 - Input pins: 3 - Pull-up resistors: 48 - N-ch open-drain outputs: 19 - 5-V tolerance: 5  I/O ports for the 48-pin LQFP, 48-pin QFN - I/O pins: 34 - Input pins: 3 - Pull-up resistors: 32 - N-ch open-drain outputs: 14 - 5-V tolerance: 4  I/O ports for the 36-pin LGA - I/O pins: 25 - Input pins: 3 - Pull-up resistors: 23 - N-ch open-drain outputs: 8 - 5-V tolerance: 1  I/O ports for the 32-pin LQFP, 32-pin QFN - I/O pins: 21 - Input pins: 3 - Pull-up resistors: 19 - N-ch open-drain outputs: 8 - 5-V tolerance: 1

R01DS0309EU0120 Rev.1.20 Page 7 of 108 Oct 31, 2024 S128 Datasheet 1. Overview

1.2 Block Diagram

Figure 1.1 shows a block diagram of the MCU superset, some individual devices within the group have a subset of the features. Figure 1.1 Block diagram Memory

256 KB code flash

4 KB data flash

24 KB SRAM

(H/M/L) OCO GPT32 × 1 GPT16H × 3 GPT16 × 3 Timers AGT × 2 RTC CTSU KINT Arm Cortex-M0+ NVIC System timer Test and DBG interfaceDTC WDT/IWDT CAC POR/LVD Reset Human machine interfaces ELC Event link AES + TRNG Security Analog CRC Data processing DOC Communication interfaces IIC × 2 SPI × 2 CAN × 1 USBFS with Battery Charging revision1.2 SCI × 3 TSN DAC8 × 3 ACMPHS × 3 ACMPLP × 2 ADC14 MPU DALI OPAMP × 4 Bus MPU Register write protection

R01DS0309EU0120 Rev.1.20 Page 8 of 108 Oct 31, 2024 S128 Datasheet 1. Overview

1.3 Part Numbering

Figure 1.2 shows the product part number information, including memory capacity and package type. Table 1.13 shows a product list. Figure 1.2 Part numbering scheme R 7 F S 1 2 8 7 Package type FM: LQFP 64 pins FL: LQFP 48 pins FJ: LQFP 32 pins LM: LGA 36 pins NE: QFN 48 pins NG: QFN 32 pins Quality ID Software ID Operating temperature 2: -40 ° C to 85° C 3: -40° C to 105° C Code flash memory size 8: 256 KB Feature set 7: Superset Group name 28: S128 Group, Arm Cortex-M0+, 32 MHz Series name 1: Ultra low power Renesas Synergy™ family Flash memory Renesas microcontroller unit Renesas 8 3 A 0 1 C F M # A A 1 Production identification code Packing A: Tray U: Tray (Full tray) B: Tray (Full carton) Terminal material (Pb-free) A: Sn (Tin) only C: Others Note: Check the order screen for each product on the Renesas website for valid symbols after the #.

R01DS0309EU0120 Rev.1.20 Page 9 of 108 Oct 31, 2024 S128 Datasheet 1. Overview Table 1.13 Product list Product part number Package code Code flash Data flash SRAM Operating temperature R7FS128783A01CFM PLQP0064KB-C 256 KB 4 KB 24 KB -40 to +105°C R7FS128783A01CFL PLQP0048KB-B -40 to +105°C R7FS128783A01CNE PWQN0048KB-A -40 to +105°C PWQN0048KC-A R7FS128782A01CLM PWLG0036KA-A -40 to +85°C R7FS128783A01CFJ PLQP0032GB-A -40 to +105°C R7FS128783A01CNG PWQN0032KB-A -40 to +105°C PWQN0032KF-A

R01DS0309EU0120 Rev.1.20 Page 10 of 108 Oct 31, 2024 S128 Datasheet 1. Overview

1.4 Function Comparison

Table 1.14 Function comparison Parts number R7FS128783A01CFM R7FS128783A01CFL R7FS128783A01CNE R7FS128782A01CLM R7FS128783A01CFJ R7FS128783A01CNG Pin count 64 48 36 32 Package LQFP LQFP/QFN LGA LQFP/QFN Code flash memory 256 KB Data flash memory 4 KB SRAM 24 KB Parity 8 KB ECC 16 KB System CPU clock 32 MHz ICU Yes KINT 8 544 Event control ELC Yes DMA DTC Yes Timers GPT32 1 GPT16H 3 3 3 2 GPT16 3 311 AGT 2 RTC Yes WDT/IWDT Yes Communication SCI 3 DALI Yes IIC 2 2 1 1 SPI 2 2 2 1 CAN Yes USBFS Yes Analog A DC14 2 1 1 51 31 0 DAC8 3 ACMPHS 3 ACMPLP 2 OPAMP 4 332 TSN Yes HMI CTSU 28 21 12 9 Data processing CRC Yes DOC Yes Security AES and TRNG I/O ports I/O pins 50 34 25 21 Input pins 3 Pull-up resistors 48 32 23 19 N-ch open- drain outputs 19 14 8 8 5-V tolerance 5 4 1 1

R01DS0309EU0120 Rev.1.20 Page 11 of 108 Oct 31, 2024 S128 Datasheet 1. Overview

1.5 Pin Functions

Table 1.15 Pin functions (1 of 3) Function Signal I/O Description Power supply VCC Input Power supply pin. Connect it to the system power supply. Connect this pin to VSS by a 0.1-μF capacitor. The capacitor should be placed close to the pin. VCL I/O Connect this pin to the VSS pin by the smoothing capacitor used to stabilize the internal power supply. Place the capacitor close to the pin. VSS Input Ground pin. Connect it to the system power supply (0 V). Clock XTAL Output Pins for a crystal resonator. An external clock signal can be input through the EXTAL pin.EXTAL Input XCIN Input Input/output pins for the sub-clock oscillator. Connect a crystal resonator between XCOUT and XCIN.XCOUT Output CLKOUT Output Clock output pin Operating mode control MD Input Pins for setting the operat ing mode. The signal levels on these pins must not be changed during operation mode transition at the time of release from the reset state. System control RES Input Reset signal input pin. The MCU enters the reset state when this signal goes low. CAC CACREF Input Measurement reference clock input pin On-chip debug SWDIO I/O Serial wire debug data input/output pin SWCLK Input Serial wire clock pin Interrupt NMI Input Non-maskable interrupt request pin IRQ0 to IRQ7 Input Maskable interrupt request pins GPT GTETRGA, GTETRGB Input External trigger input pin GTIOC0A to GTIOC6A, GTIOC0B to GTIOC6B I/O Input capture, output compare, or PWM output pin GTIU Input Hall sensor input pin U GTIV Input Hall sensor input pin V GTIW Input Hall sensor input pin W GTOUUP Output 3-phase PWM output for BLDC motor control (positive U phase) GTOULO Output 3-phase PWM output for BLDC motor control (negative U phase) GTOVUP Output 3-phase PWM output for BLDC motor control (positive V phase) GTOVLO Output 3-phase PWM output for BLDC motor control (negative V phase) GTOWUP Output 3-phase PWM output for BLDC motor control (positive W phase) GTOWLO Output 3-phase PWM output for BLDC motor control (negative W phase) AGT AGTEE0, AGTEE1 Input External event input enable AGTIO0, AGTIO1 I/O External event input and pulse output AGTO0, AGTO1 Output Pulse output AGTOA0, AGTOA1 Output Output compare match A output AGTOB0, AGTOB1 Output Output compare match B output RTC RTCOUT Output Output pin for 1-Hz/64-Hz clock

R01DS0309EU0120 Rev.1.20 Page 12 of 108 Oct 31, 2024 S128 Datasheet 1. Overview SCI SCK0, SCK1, SCK9 I/O Input/output pins for the clock (clock synchronous mode) RXD0, RXD1, RXD9 Input Input pins for received data (asy nchronous mode/clock synchronous mode) TXD0, TXD1, TXD9 Output Output pins for transmitted data (asynchronous mode/clock synchronous mode) CTS0_RTS0, CTS1_RTS1, CTS9_RTS9 I/O Input/output pins for controlling the start of transmission and reception (asynchronous mode/clock synchronous mode), active-low SCL0, SCL1, SCL9 I/O Input/output pins for the IIC clock (simple IIC) SDA0, SDA1, SDA9 I/O Input/output pins for the IIC data (simple IIC) SCK0, SCK1, SCK9 I/O Input/output pins for the clock (simple SPI) MISO0, MISO1, MISO9 I/O Input/output pins for slave tr ansmission of data (simple SPI) MOSI0, MOSI1, MOSI9 I/O Input/output pins for master transmission of data (simple SPI) SS0, SS1, SS9 Input Chip-select input pins (simple SPI), active-low DALI DRX0 Input Input pin for DALI received data DTX0 Output Output pin for DALI transmitted data IIC SCL0, SCL1 I/O Input/output pins for clock SDA0, SDA1 I/O Input/output pins for data SPI RSPCKA, RSPCKB I/O Clock input/output pin MOSIA, MOSIB I/O Inputs or outputs data output from the master MISOA, MISOB I/O Inputs or outputs data output from the slave SSLA0, SSLB0 I/O Input or output pin for slave selection SSLA1 to SSLA3, SSLB1 to SSLB3 Output Output pin for slave selection CAN CRX0 Input Receive data CTX0 Output Transmit data USBFS VSS_USB Input Ground pins VCC_USB_LDO Input Power supply pin for USB LDO regulator VCC_USB I/O Input: Power supply pin for USB transceiver. Output: USB LDO regulator output pin. This pin should be connected to an external capacitor. USB_DP I/O D+ I/O pin of the USB on-chip tr ansceiver. This pin should be connected to the D+ pin of the USB bus. USB_DM I/O D- I/O pin of the USB on-chip tr ansceiver. This pin should be connected to the D- pin of the USB bus. USB_VBUS Input USB cable connection monitor pin. This pin should be connected to VBUS of the USB bus. The VBUS pin status (connected or disconnected) can be detected when the USB module is operating as a device controller. Analog power supply AVCC0 Input Analog block power supply pin AVSS0 Input Analog block power supply ground pin VREFH0 Input Reference power supply pin VREFL0 Input Reference power supply ground pin Table 1.15 Pin functions (2 of 3) Function Signal I/O Description

R01DS0309EU0120 Rev.1.20 Page 13 of 108 Oct 31, 2024 S128 Datasheet 1. Overview ADC14 AN000 to AN013, AN016 to AN022 Input Input pins for the analog signals to be processed by the A/D converter ADTRG0 Input Input pins for the external tri gger signals that start the A/D conversion, active-low DAC8 DA0 to DA2 Output Output pins for the analog signals to be processed by the D/A converter Comparator output VCOUT Output Comparator output pin ACMPHS IVREF0 to IVREF2 Input Reference voltage input pin IVCMP0 to IVCMP2 Input Analog voltage input pin ACMPLP CMPREF0, CMPREF1 Input Reference voltage input pins CMPIN0, CMPIN1 Input Analog voltage input pins OPAMP AMP0+ to AMP3+ Input Analog voltage input pins AMP0- to AMP3- Input Analog voltage input pins AMP0O to AMP3O Output Analog voltage output pins CTSU TS00 to TS22, TS25 to TS29 Input Capacitive touch det ection pins (touch pins) TSCAP - Secondary power supply pin for the touch driver KINT KR00 to KR07 Input Key interrupt input pins I/O ports P000 to P004, P010 to P015 I/O General-purpose input/output pins P100 to P113 I/O General-purpose input/output pins P200 Input General-purpose input pin P201, P204 to P206, P212, P213 I/O General-purpose input/output pins P214, P215 Input General-purpose input pins P300 to P304 I/O General-purpose input/output pins P400 to P403, P407 to P411 I/O General-purpose input/output pins P500 to P502 I/O General-purpose input/output pins P914, P915 I/O General-purpose input/output pins Table 1.15 Pin functions (3 of 3) Function Signal I/O Description

R01DS0309EU0120 Rev.1.20 Page 14 of 108 Oct 31, 2024 S128 Datasheet 1. Overview

1.6 Pin Assignments

Figure 1.3 to Figure 1.8 show the pin assignments. Figure 1.3 Pin assignment for LQFP 64-pin P501 P502 P015 P014 P012 AVCC0 AVSS0 P011/VREFL0 P010/VREFH0 P004 P003 P002 P001 P013 P300/SWCLK P301 P302 P303 P304 P201/MD RES P204 P205 P206 VCC_USB_LDO VCC_USB P914/USB_DP P915/USB_DM VSS_USB P200 P100 P102 P103 P104 P105 P106 P107 VSS VCC P113 P112 P111 P110 P108/SWDIO P101 P109 P400 P402 P403 VCL P215/XCIN P214/XCOUT VSS P213/XTAL P212/EXTAL VCC P411 P410 P408 P407 P401 P409 P000 R7FS128783A01CFM P500

R01DS0309EU0120 Rev.1.20 Page 17 of 108 Oct 31, 2024 S128 Datasheet 1. Overview Figure 1.8 Pin assignment for QFN 32-pin P300/SWCLK P200 P201/MD RES VCC_USB_LDO VCC_USB P914/USB_DP P915/USB_DM P100 P102 P103 P112 P110 P109 P108/SWDIO P101 VCL P215/XCIN P214/XCOUT VSS/VSS_USB P213/XTAL P212/EXTAL VCC P407 R7FS128783A01CNG P014 P013 P012 AVCC0 AVSS0 P011/VREFL0 P010/VREFH0 P015 Exposed die pad Note: Exposed die pad is recommended to connect to VSS.

R01DS0309EU0120 Rev.1.20 Page 18 of 108 Oct 31, 2024 S128 Datasheet 1. Overview

1.7 Pin Lists

Power, System, Clock, Debug, CAC I/O ports Timers Communication Interfaces Analogs HMI LQFP64 LQFP48 QFN48 LGA36 LQFP32 QFN32 AGT GPT_OPS, POEG GPT RTC USBFS,CAN, DALI SCI IIC SPI ADC14 DAC8 ACMPHS, ACMPLP OPAMP CTSU Interrupt 1 1 1 - - - CACREF_ C P400 AGTIO1_ D GTIOC6A SCK0_B/ SCK1_B SCL0_A TS20 IRQ0 222- - - P 4 0 1 G T E T R G A GTIOC6B CTX0_B CTS0_RTS 0_B/SS0_B/ TXD1_B/ MOSI1_B/ SDA1_B SDA0_A TS19 IRQ5 3----- P 4 0 2 G T I O C 3 B CRX0_B RXD1_B/ MISO1_B/ SCL1_B TS18 IRQ4 4----- P 4 0 3 G T I O C 3 A CTS1_RTS 1_B/SS1_B TS17

533 A 1 11 V C L

755 C 1 33X C O U T P 2 1 4

866 D 1 44 V S S

9 7 7 D3 5 5 XTAL P213 GTETRGA GTIOC0A TXD1_A/ MOSI1_A/ SDA1_A IRQ2 1 0 88 D 2 66 E X T A L P 2 1 2 A G T E E 1 G T E T R G B GTIOC0B RXD1_A/ MISO1_A/ SCL1_A IRQ3 1 1 99 E 1 77 V C C 1 2 ----- P 4 1 1 A G T O A 1 G T O V U P _ B GTIOC6A TXD0_B/ MOSI0_B/ SDA0_B MOSIA_B TS07 IRQ4 1 3 ----- P 4 1 0 A G T O B 1 G T O V L O _ B GTIOC6B RXD0_B/ MISO0_B/ SCL0_B MISOA_B TS06 IRQ5 14 10 10 - - - P409 GTOWUP GTIOC5A TXD0_E/ MOSI0_E/ SDA0_E/ TXD9_A/ MOSI9_A/ SDA9_A TS05 IRQ6 15 11 11 - - - P408 GTOWLO_ B GTIOC5B RXD9_A/ MISO9_A/ SCL9_A SCL0_C TS04 IRQ7 16 12 12 E2 8 8 P407 AGTIO0_ C GTIOC0A RTC OUT USB_VBU S CTS0_RTS 0_D/SS0_D SDA0_B SSLB3_A ADTRG0_ B TS03 17 13 13 D1 4 4 VSS_USB 18 14 14 F2 9 9 P915 USB_DM 19 15 15 F3 10 10 P914 USB_DP 20 16 16 F4 11 11 VCC_USB 21 17 17 F5 12 12 VCC_USB_ LDO 22 18 18 - - - P206 GTIU_A RXD0_D/ MISO0_D/ SCL0_D SDA1_A SSLB1_A TS01 IRQ0 2 3 ----- C L K O U T _ A P 2 0 5 A G T O 1 G T I V _ A G T I O C 4 A TXD0_ MOSI0_D/ SDA0_D/ CTS9_RTS 9_A/SS9_A SCL1_A SSLB0_A TSCAP_ A IRQ1 2 4 ----- C A C R E F _ A P204 AGTIO1_ A GTIW_A GTIOC4B SCK0_D/ SCK9_A SCL0_B RSPCKB_ A TS00 25 19 19 E3 13 13 RES 26 20 20 E4 14 14 MD P201 27 21 21 E5 15 15 P200 NMI 2 8 ----- P 3 0 4 G T I O C 1 A 2 9 ----- P 3 0 3 G T I O C 1 B TS02 30 22 22 - - - P302 GTOUUP_ A GTIOC4A SSLB3_B TS08 IRQ5 31 23 23 - - - P301 AGTIO0_ D GTOULO_ A GTIOC4B CTS9_RTS 9_D/ SS9_D SSLB2_B TS09 IRQ6 32 24 24 F6 16 16 SWCLK P300 GTOUUP_ C GTIOC0A SSLB1_B 33 25 25 E6 17 17 SWDIO P108 GTOULO_ C GTIOC0B CTS9_RTS 9_B/SS9_B SSLB0_B 34 26 26 D4 18 18 CLKOUT_B P109 GTOVUP_ A GTIOC1A CTX0_A SCK1_E/ TXD9_B/ MOSI9_B/ SDA9_B MOSIB_B TS10

R01DS0309EU0120 Rev.1.20 Page 19 of 108 Oct 31, 2024 S128 Datasheet 1. Overview Note: Several pin names have the added suffix of _A, _B, _C, _D and _E. The suffix can be ignored when assigning functionality. 35 27 27 D5 19 19 P110 GTOVLO_ A GTIOC1B CRX0_A CTS0_RTS 0_C/ SS0_C/ RXD9_B/ MISO9_B/ SCL9_B MISOB_B VCOUT TS11 IRQ3 36 28 28 D6 - - P111 AGTOA0 GTIOC3A SCK0_C/ SCK9_B RSPCKB_ B TS12 IRQ4 37 29 29 C6 20 20 P112 AGTOB0 GTIOC3B TXD0_C/ MOSI0_C/ SDA0_C/ SCK1_D SSLB0_C TSCAP_ C 3 8 ----- P 1 1 3 G T I O C 2 A 39 30 30 - - - VCC 40 31 31 - - - VSS 4 1 ----- P 1 0 7 G T I O C 0 A KR07 4 2 ----- P 1 0 6 G T I O C 0 B SSLA3_A AN016 KR06 4 3 ----- P 1 0 5 G T E T R G A GTIOC1A SSLA2_A AN017 KR05/ IRQ0 44 32 32 - - - P104 GTETRGB GTIOC1B RXD0_C/ MISO0_C/ SCL0_C SSLA1_A AN018 TS13 KR04/ IRQ1 45 33 33 C3 21 21 P103 GTOWUP GTIOC2A CTX0_C CTS0_RTS 0_A/SS0_A SSLA0_A AN019 CMPREF TS14 KR03 46 34 34 C4 22 22 P102 AGTO0 GTOWLO_ A GTIOC2B CRX0_C SCK0_A RSPCKA_ A AN020/ ADTRG0_ A CMPIN1 TS15 KR02 47 35 35 C5 23 23 P101 AGTEE0 GTETRGB GTIOC5A DTX0 TXD0_A/ MOSI0_A/ SDA0_A/ CTS1_RTS 1_A/SS1_A SDA1_B MOSIA_A AN021 CMPREF TS16 KR01/ IRQ1 48 36 36 B6 24 24 P100 AGTIO0_ A GTETRGA GTIOC5B DRX0 RXD0_A/ MISO0_A/ SCL0_A/ SCK1_A SCL1_B MISOA_A AN022 CMPIN0 TS26 KR00/ IRQ2 49 37 37 - - - P500 AN013 DA1_B TS27 5 0 ----- P 5 0 1 AN012 AMP3+ 5 1 ----- P 5 0 2 AN011 AMP3- 52 38 38 A6 25 25 P015 AN01 0 DA1_A IVCMP1 AMP2+ TS28 IRQ7 53 39 39 A5 26 26 P014 AN009 DA0 IVREF1 AMP2- TS29 54 40 40 B5 27 27 P013 AN008 IVCMP0 AMP1+ 55 41 41 B4 28 28 P012 AN007 IVREF0 AMP1- 56 42 42 A4 29 29 AVCC0 57 43 43 A3 30 30 AVSS0 58 44 44 B3 31 31 VREFL0 P011 AN006 DA2_A AMP2O 59 45 45 A2 32 32 VREFH0 P010 AN005 AMP1O 6 0 ----- P 0 0 4 AN004 DA2_B TS25 IRQ3 6 1 ----- P 0 0 3 AN003 AMP3O 62 46 46 F1 - - P002 AN002 AMP0O IRQ2 63 47 47 C2 - - P001 AN001 IVREF2 AMP0- TS22 IRQ7 64 48 48 B2 - - P000 AN000 IVCMP2 AMP0+ TS21 IRQ6 Pin number Power, System, Clock, Debug, CAC I/O ports Timers Communication Interfaces Analogs HMI LQFP64 LQFP48 QFN48 LGA36 LQFP32 QFN32 AGT GPT_OPS, POEG GPT RTC USBFS,CAN, DALI SCI IIC SPI ADC14 DAC8 ACMPHS, ACMPLP OPAMP CTSU Interrupt

R01DS0309EU0120 Rev.1.20 Page 21 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.1 Absolute Maximum Ratings

Note: Contact Renesas Electronics sales office for information on derating operation under Ta = +85°C to +105°C. Derating is the systematic reduction of load for improved reliability. Note 1. Ports P205, P206, P400, P401, and P407 are 5V-tolerant. Do not input signals or an I/O pull-up power supply while the device is not powered. The current injection that results from input of such a signal or I/O pull-up might cause malfunction and the abnormal current that passes in the device at this time might cause degradation of internal elements. Note 2. See section 2.2.1, Tj/Ta Definition. Note 3. The upper limit of the operatin g temperature is 85°C or 105°C, depending on the product. For details, see section 1.3, Part Numbering. Caution: Permanent damage to the MCU might result if absolute maximum ratings are exceeded. To preclude any malfunctions due to noise interference, insert capacitors of high frequency characteristics between the VCC and VSS pins, between the AVCC0 and AVSS0 pins, between the VCC_USB and VSS_USB pins, and between the VREFH0 and VREFL0 pins. Place capacitors of about 0.1 μF as close as possible to every power supply pin and use the shortest and heaviest possible traces. Also, connect capacitors as stabilization capacitance. Connect the VCL pin to a VSS pin by a 4.7-µF capacitor. The capacitor must be placed close to the pin. Table 2.1 Absolute maximum ratings Parameter Symbol Value Unit Power supply voltage VCC -0.5 to +6.5 V Input voltage 5 V tolerant ports*1 Vin -0.3 to +6.5 V P000 to P004 P010 to P015 P500 to P502 Vin -0.3 to AVCC0 + 0.3 V Others V in -0.3 to VCC + 0.3 V Reference power supply voltage VREFH0 -0.3 to +6.5 V Analog power supply voltage AVCC0 -0.5 to +6.5 V USB power supply voltage VCC_USB -0.5 to +6.5 V VCC_USB_LDO -0.5 to +6.5 V Analog input voltage When AN000 to AN013 are used VAN -0.3 to AVCC0 + 0.3 V When AN016 to AN022 are used -0.3 to VCC + 0.3 V Operating temperature* 2 *3 Topr -40 to +85 -40 to +105 Storage temperature T stg -55 to +125 °C

R01DS0309EU0120 Rev.1.20 Page 22 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. Use AVCC0 and VCC under the following conditions: AVCC0 and VCC can be set individually within the operating range when VCC ≥ 2.2 V and AVCC0 ≥ 2.2 V. AVCC0 = VCC when VCC < 2.2 V or AVCC0 < 2.2 V. Note 2. When powering on the VCC and AVCC0 pins, power them on at the same time or the VCC pin first and then the AVCC0 pin. Table 2.2 Recommended operating conditions Parameter Symbol Value Min Typ Max Unit Power supply voltages VCC *1, *2 When USBFS is not used 1.6 - 5.5 V When USBFS is used USB Regulator Disable VCC_USB - 3.6 V When USBFS is used USB Regulator Enable VCC_USB _LDO - 5.5 V V S S -0 -V USB power supply voltages VCC_USB When USBFS is not used -V CC -V When USBFS is used USB Regulator Disable (Input) 3.0 3.3 3.6 V VCC_USB_LDO When USBFS is not used -V CC -V When USBFS is used USB Regulator Disable -V CC -V When USBFS is used USB Regulator Enable 3.8 - 5.5 V VSS_USB - 0 - V Analog power supply voltages AVCC0 *1, *2 1.6 - 5.5 V AVSS0 - 0 - V VREFH0 When used as ADC14 Reference 1.6 - AVCC0 V VREFL0 - 0 - V

R01DS0309EU0120 Rev.1.20 Page 23 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.2 DC Characteristics

2.2.1 Tj/Ta Definition

Note: Make sure that Tj = T a + θja × total power consumption (W), where total power consumption = (VCC - VOH) × ΣIOH + VOL × ΣIOL + ICCmax × VCC. Note 1. The upper limit of operating temperature is 85°C or 105°C, depending on the product. For details, see section 1.3, Part Numbering. If the part number shows an operation temperature to 85°C, then Tj max is 105°C, otherwise, it is 125°C.

2.2.2 I/O V IH, VIL

Note 1. SCL0_A, SDA0_A, SDA0_B, SCL1_A, SDA1_A (total 5 pins) Note 2. SCL0_A, SDA0_A, SCL0_B, SDA0_B, SCL0_C, SCL1_A, SDA1_A, SCL1_B, SDA1_B (total 9 pins) Note 3. P205, P206, P400, P401, P407 (total 5pins) Table 2.3 DC characteristics Conditions: Products with operating temperature (Ta) -40 to +105°C Parameter Symbol Typ Max Unit Test conditions Permissible junction temperature Tj - 125 °C High-speed mode Middle-speed mode Low-voltage mode Low-speed mode SubOSC-speed mode 105* Table 2.4 I/O V IH, VIL (1) Conditions: VCC = AVCC0 = VCC_USB = VCC_USB_LDO = 2.7 to 5.5 V Parameter Symbol Min Typ Max Unit Test Conditions Schmitt trigger input voltage IIC (except for SMBus)*1 VIH VCC × 0.7 - 5.8 V - VIL - - VCC × 0.3 ΔVT VCC × 0.05 - - RES, NMI Other peripheral input pins excluding IIC V IH VCC × 0.8 - - VIL - - VCC × 0.2 ΔVT VCC × 0.1 - - Input voltage (except for Schmitt trigger input pin) IIC (SMBus)*2 VIH 2.2 - - VCC = 3.6 to 5.5 V V IH 2.0 - - VCC =2.7 to 3.6 V VIL -- 0 .8 - 5V-tolerant ports*3 VIH VCC × 0.8 - 5.8 VIL - - VCC × 0.2 P000 to P004 P010 to P015 P500 to P502 V IH AVCC0 × 0.8 - - VIL - - AVCC0 × 0.2 P914, P915 VIH VCC_USB × 0.8 - VCC_USB + 0.3 VIL - - VCC_USB × 0.2 EXTAL Input ports pins except for P000 to P004, P010 to P015, P500 to P502, P914, P915 V IH VCC × 0.8 - - VIL - - VCC × 0.2

R01DS0309EU0120 Rev.1.20 Page 24 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. P205, P206, P400, P401, P407 (total 5pins) Table 2.5 I/O V IH, VIL (2) Conditions: VCC = AVCC0 = VCC_USB = VCC_USB_LDO = 1.6 to 2.7 V Parameter Symbol Min Typ Max Unit Test Conditions Schmitt trigger input voltage RES, NMI Peripheral input pins V IH VCC × 0.8 - - V - VIL - - VCC × 0.2 ΔVT VCC × 0.01 - - Input voltage (except for Schmitt trigger input pin) 5V-tolerant ports* 1 VIH VCC × 0.8 - 5.8 VIL - - VCC × 0.2 P000 to P004 P010 to P015 P500 to P502 VIH AVCC0 × 0.8 - - VIL - - AVCC0 × 0.2 P914, P915 VIH VCC_USB × 0.8 - VCC_USB + 0.3 V IL - - VCC_USB × 0.2 EXTAL Input ports pins except for P000 to P004, P010 to P015, P500 to P502, P914, P915 V IH VCC × 0.8 - - VIL - - VCC × 0.2

R01DS0309EU0120 Rev.1.20 Page 25 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.2.3 I/O I OH, IOL

Caution: To protect the reliability of the MCU, the outp ut current values should not exceed the values in this table. The average output current indicates the average value of current measured during 100 μs. Note 1. This is the value when low driving ability is selected with the Port Drive Capability bit in the PmnPFS register. Note 2. This is the value when middle driving ability is sele cted with the Port Drive Capability bit in the PmnPFS register. Note 3. Except for Ports P200, P2 14, P215, which are input ports. Table 2.6 I/O I OH, IOL Conditions: VCC = AVCC0 = VCC_USB = VCC_USB_LDO = 1.6 to 5.5 V Parameter Symbol Min Typ Max Unit Permissible output current (average value per pin) Ports P000 to P004, P010 to P015, P212, P213, P500 to P502 IOH --- 4 . 0 m A IOL --4 . 0 m A Ports P408, P409 Low drive*1 IOH --- 4 . 0 m A IOL --4 . 0 m A Middle drive*2 VCC = 2.7 to 3.0 V IOH --- 8 . 0 m A IOL --8 . 0 m A Middle drive*2 VCC = 3.0 to 5.5 V IOH --- 2 0 . 0 m A IOL --2 0 . 0 m A Ports P914, P915 IOH --- 4 . 0 m A IOL --4 . 0 m A Other output pins*3 Low drive*1 IOH --- 4 . 0 m A IOL --4 . 0 m A Middle drive*2 IOH --- 8 . 0 m A IOL --8 . 0 m A Permissible output current (max value per pin) Ports P000 to P004, P010 to P015, P212, P213, P500 to P502 IOH --- 4 . 0 m A IOL --4 . 0 m A Ports P408, P409 Low drive*1 IOH --- 4 . 0 m A IOL --4 . 0 m A Middle drive*2 VCC = 2.7 to 3.0 V IOH --- 8 . 0 m A IOL --8 . 0 m A Middle drive*2 VCC = 3.0 to 5.5 V IOH --- 2 0 . 0 m A IOL --2 0 . 0 m A Ports P914, P915 IOH --- 4 . 0 m A IOL --4 . 0 m A Other output pins*3 Low drive*1 IOH --- 4 . 0 m A IOL --4 . 0 m A Middle drive*2 IOH --- 8 . 0 m A IOL --8 . 0 m A Permissible output current (max value total pins) Total of ports P000 to P004, P010 to P015, P500 to P502 ΣIOH (max) --- 3 0 m A ΣIOL (max) --3 0m A Total of ports P914, P915 ΣIOH --- 4 . 0 m A ΣIOL --4 . 0 m A Total of all output pin ΣIOH (max) --- 6 0 m A ΣIOL (max) --6 0m A

R01DS0309EU0120 Rev.1.20 Page 26 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.2.4 I/O V OH, VOL, and Other Characteristics

Note 1. SCL0_A, SDA0_A, SCL0_B, SDA0_B, SCL0_C, SCL1_A, SDA1_A, SCL1_B, SDA1_B (total 9 pins). Note 2. This is the value when middle driving ability is sele cted with the Port Drive Capability bit in the PmnPFS register. Note 3. Based on characterization data, not tested in production. Note 4. Except for Ports P200, P2 14, P215, which are input ports. Note 5. Except for P212, P213. Note 1. SCL0_A, SDA0_A, SCL0_B, SDA0_B, SCL0_C, SCL1_A, SDA1_A, SCL1_B, SDA1_B (total 9 pins). Note 2. This is the value when middle driving ability is sele cted with the Port Drive Capability bit in the PmnPFS register. Note 3. Based on characterization data, not tested in production. Table 2.7 I/O V OH, VOL (1) Conditions: VCC = AVCC0 = VCC_USB = VCC_USB_LDO = 4.0 to 5.5 V Parameter Symbol Min Typ Max Unit Test conditions Output voltage IIC* 1, *2 VOL -- 0 .4 V I OL = 3.0 mA VOL -- 0 .6 I OL = 6.0 mA Ports P408, P409*2, *3 VOH VCC - 1.0 - - IOH = -20.0 mA VOL -- 1 .0 I OL = 20 mA Ports P000 to P004, P010 to P015, P500 to P502 Low drive V OH AVCC0 - 0.8 -- I OH = -2.0 mA VOL -- 0 .8 I OL = 2.0 mA Middle drive V OH AVCC0 - 0.8 -- I OH = -4.0 mA VOL -- 0 .8 I OL = 4.0 mA Ports P914, P915 VOH VCC_USB - 0.8 -- I OH = -2.0 mA VOL -- 0 .8 I OL = 2.0 mA Other output pins*4 Low drive V OH VCC - 0.8 - - IOH = -2.0 mA VOL -- 0 .8 I OL = 2.0 mA Middle drive*5 VOH VCC - 0.8 - - IOH = -4.0 mA VOL -- 0 .8 I OL = 4.0 mA Table 2.8 I/O V OH, VOL (2) Conditions: VCC = AVCC0 = VCC_USB = VCC_USB_LDO = 2.7 to 4.0 V Parameter Symbol Min Typ Max Unit Test conditions Output voltage IIC* 1, *2 VOL -- 0 .4 V I OL = 3.0 mA VOL -- 0 .6 I OL = 6.0 mA Ports P408, P409*2, *3 VOH VCC - 1.0 - - IOH = -20.0 mA VCC = 3.3 V VOL -- 1 .0 I OL = 20 mA VCC = 3.3 V Ports P000 to P004, P010 to P015, P500 to P502 Low drive V OH AVCC0 - 0.5 - - IOH = -1.0 mA VOL -- 0 .5 I OL = 1.0 mA Middle drive V OH AVCC0 - 0.5 - - IOH = -2.0 mA VOL -- 0 .5 I OL = 2.0 mA Ports P914, P915 VOH VCC_USB - 0.5 -- I OH = -1.0 mA VOL -- 0 .5 I OL = 1.0 mA Other output pins*4 Low drive V OH VCC - 0.5 - - IOH = -1.0 mA VOL -- 0 .5 I OL = 1.0 mA Middle drive*5 VOH VCC - 0.5 - - IOH = -2.0 mA VOL -- 0 .5 I OL = 2.0 mA

R01DS0309EU0120 Rev.1.20 Page 27 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 4. Except for Ports P200, P2 14, P215, which are input ports. Note 5. Except for P212, P213. Note 1. Except for Ports P200, P2 14, P215, which are input ports. Note 2. Except for P212, P213. Table 2.9 I/O V OH, VOL (3) Conditions: VCC = AVCC0 = VCC_USB = VCC_USB_LDO = 1.6 to 2.7 V Parameter Symbol Min Typ Max Unit Test conditions Output voltage Ports P000 to P004, P010 to P015, P500 to P502 Low drive V OH AVCC0 - 0.3 - - V I OH = -0.5 mA VOL -- 0 .3 I OL = 0.5 mA Middle drive V OH AVCC0 - 0.3 - - IOH = -1.0 mA VOL -- 0 .3 I OL = 1.0 mA Ports P914, P915 VOH VCC_USB - 0.3 -- I OH = -0.5 mA VOL -- 0 .3 I OL = 0.5 mA Other output pins*1 Low drive V OH VCC - 0.3 - - IOH = -0.5 mA VOL -- 0 .3 I OL = 0.5 mA Middle drive* VOH VCC - 0.3 - - IOH = -1.0 mA VOL -- 0 .3 I OL = 1.0 mA

R01DS0309EU0120 Rev.1.20 Page 28 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.2.5 Output Characteristics for I/O Pins (Low Drive Capacity)

Figure 2.2 V OH/VOL and IOH/IOL voltage characteristics at Ta = 25°C when low drive output is selected (reference data, except for P914 and P915) Table 2.10 I/O other characteristics Conditions: VCC = AVCC0 = VCC_USB = VCC_USB_LDO = 1.6 to 5.5 V Parameter Symbol Min Typ Max Unit Test conditions Input leakage current RES, Ports P200, P214, P215 | I in | - - 1.0 μAV in = 0 V Vin = VCC Three-state leakage current (off state) 5V-tolerant ports | ITSI | - - 1.0 μAV in = 0 V Vin = 5.8 V Other ports - - 1.0 Vin = 0 V Vin = VCC Input pull-up resistor All ports (except for P200, P214, P215, P914, P915) R U 10 20 50 k Ω Vin = 0 V Input capacitance USB_DP , USB_DM, P200 C in - - 30 pF V in = 0 V f = 1 MHz Ta = 25°COther input pins - - 15 03 4 615 2 -60 -50 -40 -30 -20 -10 VCC = 2.7 V VCC = 3.3 V VCC = 5.5 V VOH/VOL [V] IOH/IOL vs VOH/VOL IOH/IOL [mA] VCC = 1.6 V VCC = 5.5 V VCC = 3.3 V VCC = 2.7 V VCC = 1.6 V

R01DS0309EU0120 Rev.1.20 Page 31 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.2.6 Output Characteristics for I/O Pins (Middle Drive Capacity)

Figure 2.7 V OH/VOL and IOH/IOL voltage characteristics at Ta = 25°C when middle drive output is selected (reference data, except for P914 and P915) Figure 2.8 V OH/VOL and IOH/IOL temperature characteristics at VCC = 1.6 V when middle drive output is selected (reference data, except for P914 and P915) 03 4 615 2 -60 -140 -40 -120 -20 -100 VCC = 2.7 V VCC = 3.3 V VCC = 5.5 V VOH/VOL [V] IOH/IOL vs VOH/VOL IOH/IOL [mA] 100 120 VCC = 1.6 V VCC = 5.5 V VCC = 3.3 V VCC = 2.7 V VCC = 1.6 V -80 140 Ta = 105C Ta = 25C Ta = -40C Ta = 105C Ta = 25C Ta = -40C VOH/VOL [V] IOH/IOL vs VOH/VOL IOH/IOL [mA]

R01DS0309EU0120 Rev.1.20 Page 33 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.11 V OH/VOL and IOH/IOL temperature characteristics at VCC = 5.5 V when middle drive output is selected (reference data, except for P914 and P915)

2.2.7 Output Characteristi cs for P408 and P409 I/O Pins (Middle Drive Capacity)

Figure 2.12 V OH/VOL and IOH/IOL voltage characteristics at Ta = 25°C when middle drive output is selected (reference data) 01 634 52 -60 -40 -20 Ta = 105C Ta = 25C Ta = -40C Ta = 105C Ta = 25C Ta = -40C VOH/VOL [V] IOH/IOL vs VOH/VOL IOH/IOL [mA] -140 -120 -100 -80 140 120 100 03 4 615 2 VCC = 2.7 V VCC = 3.3 V VCC = 5.5 V VOH/VOL [V] IOH/IOL vs VOH/VOL IOH/IOL [mA] VCC = 5.5 V VCC = 3.3 V VCC = 2.7 V 200 180 160 140 120 100 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200

R01DS0309EU0120 Rev.1.20 Page 34 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.13 V OH/VOL and IOH/IOL temperature characteristics at VCC = 2.7 V when middle drive output is selected (reference data) Figure 2.14 V OH/VOL and IOH/IOL temperature characteristics at VCC = 3.3 V when middle drive output is selected (reference data) 00 .5 2.531 1.5 2 -60 -20 Ta = 105C Ta = 25C Ta = -40C Ta = 105C Ta = 25C Ta = -40C VOH/VOL [V] IOH/IOL vs VOH/VOL IOH/IOL [mA] -40 00 . 5 2 . 5 31 1.5 2 -100 -40 -20

60 Ta = 105C

Ta = 25C Ta = -40C Ta = 105C Ta = 25C Ta = -40C VOH/VOL [V] IOH/IOL vs VOH/VOL IOH/IOL [mA] 3.5 -60 -80 100

R01DS0309EU0120 Rev.1.20 Page 35 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.15 V OH/VOL and IOH/IOL temperature characteristics at VCC = 5.5 V when middle drive output is selected (reference data)

2.2.8 Output Characteri stics for IIC I/O Pins

Figure 2.16 V OH/VOL and IOH/IOL voltage characteristics at Ta = 25°C 01 634 52 -60 -20 Ta = 105C Ta = 25C Ta = -40C Ta = 105C Ta = 25C Ta = -40C VOH/VOL [V] IOH/IOL vs VOH/VOL IOH/IOL [mA] -220 -180 -100 140 220 100 180 -140 03 4 615 2 120 110 100 VCC = 2.7 V (Middle drive) VCC = 3.3 V (Middle drive) VCC = 5.5 V (Middle drive) VOL [V] IOL vs VOL IOL [mA] VCC = 2.7 V (Low drive) VCC = 3.3 V (Low drive) VCC = 5.5 V (Low drive)

R01DS0309EU0120 Rev.1.20 Page 36 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.2.9 Operating and Standby Current

Table 2.11 Operating and standby current (1) (1 of 2) Conditions: VCC = AVCC0 = 1.6 to 5.5 V Parameter Symbol Typ* 9 Max Unit Test Conditions Supply current*1 High-speed mode* Normal mode All peripheral clock disabled, while (1) code executing from flash*5 ICLK = 32 MHz I CC 4.2 - mA * 7 ICLK = 16 MHz 2.6 - ICLK = 8 MHz 1.8 - All peripheral clock disabled, CoreMark code executing from flash*5 ICLK = 32 MHz 6.2 - ICLK = 16 MHz 3.6 - ICLK = 8 MHz 2.4 - All peripheral clock enabled, while (1) code executing from flash*5 ICLK = 32 MHz 10.5 - *8 ICLK = 16 MHz 5.8 - ICLK = 8 MHz 3.4 - All peripheral clock enabled, code executing from flash*5 ICLK = 32 MHz - 22.1 Sleep mode All peripheral clock disabled*5 ICLK = 32 MHz 1.6 - *7 ICLK = 16 MHz 1.2 - ICLK = 8 MHz 0.9 - All peripheral clock enabled*5 ICLK = 32 MHz 7.5 - *8 ICLK = 16 MHz 4.1 - ICLK = 8 MHz 2.4 - Increase during BGO operation*6 2.5 - - Middle-speed mode* Normal mode All peripheral clock disabled, while (1) code executing from flash* ICLK = 12 MHz I CC 1.9 - mA * 7 ICLK = 8 MHz 1.6 - All peripheral clock disabled, CoreMark code executing from flash* ICLK = 12 MHz 2.7 - ICLK = 8 MHz 2.1 - All peripheral clock enabled, while (1) code executing from flash* ICLK = 12 MHz 4.3 - *8 ICLK = 8 MHz 3.1 - All peripheral clock enabled, code executing from flash* ICLK = 12 MHz - 8.1 Sleep mode All peripheral clock disabled*5 ICLK = 12 MHz 0.8 - *7 ICLK = 8 MHz 0.8 - All peripheral clock enabled*5 ICLK = 12 MHz 3.0 - *8 ICLK = 8 MHz 2.2 - Increase during BGO operation*6 2.5 - - Low-speed mode* Normal mode All peripheral clock disabled, while (1) code executing from flash*5 ICLK = 1 MHz I CC 0.3 - mA * 7 All peripheral clock disabled, CoreMark code executing from flash*5 ICLK = 1 MHz 0.4 - All peripheral clock enabled, while (1) code executing from flash*5 ICLK = 1 MHz 0.5 - *8 All peripheral clock enabled, code executing from flash*5 ICLK = 1 MHz - 2.0 Sleep mode All peripheral clock disabled*5 ICLK = 1 MHz 0.2 - *7 All peripheral clock enabled* ICLK = 1 MHz 0.4 - *8

R01DS0309EU0120 Rev.1.20 Page 37 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. Supply current values do not include output ch arge/discharge current from all pins. The values apply when internal pull-up MOSs are in the off state. Note 2. The clock source is HOCO. Note 3. The clock source is MOCO. Note 4. The clock source is the sub-clock oscillator. Note 5. This does not include BGO operation. Note 6. This is the increase for programming or erasure of the flash memory for data storage during program execution. Note 7. PCLKB and PCLKD are set to divided by 64. Note 8. PCLKB and PCLKD are the same frequency as that of ICLK. Note 9. VCC = 3.3 V. Note 10. MOCO and DAC is stopped. Supply current*1 Low-voltage mode* Normal mode All peripheral clock disabled, while (1) code executing from flash*5 ICLK = 4 MHz I CC 1.5 - mA * 7 All peripheral clock disabled, CoreMark code executing from flash*5 ICLK = 4 MHz 1.7 - All peripheral clock enabled, while (1) code executing from flash*5 ICLK = 4 MHz 2.3 - *8 All peripheral clock enabled, code executing from flash*5 ICLK = 4 MHz - 4.0 Sleep mode All peripheral clock disabled*5 ICLK = 4 MHz 0.9 - *7 All peripheral clock enabled*5 ICLK = 4 MHz 1.7 - *8 Subosc- speed mode*4 Normal mode All peripheral clock disabled, while (1) code executing from flash* ICLK = 32.768 kHz I CC 5.9 - μA* 7 All peripheral clock enabled, while (1) code executing from flash*5 ICLK = 32.768 kHz 13.0 - *8 All peripheral clock enabled, code executing from flash*5 ICLK = 32.768 kHz 128.3 (17.8)*10 163.7 Sleep mode All peripheral clock disabled*5 ICLK = 32.768 kHz 3.2 - *7 All peripheral clock enabled*5 ICLK = 32.768 kHz 10.0 - *8 Table 2.11 Operating and standby current (1) (2 of 2) Conditions: VCC = AVCC0 = 1.6 to 5.5 V Parameter Symbol Typ* 9 Max Unit Test Conditions

R01DS0309EU0120 Rev.1.20 Page 38 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.17 Voltage dependency in high-speed mode (reference data) ICC (mA) VCC (V) Ta = 105 C, ICLK = 4MHz *2 Ta = 105 C, ICLK = 16MHz *2 Ta = 105 C, ICLK = 8MHz *2 Ta = 25 C, ICLK = 16MHz *1 Ta = 25 C, ICLK = 8MHz *1 Ta = 25 C, ICLK = 4MHz *1 Ta = 25 C, ICLK = 32MHz *1 Ta = 105 C, ICLK = 32MHz *2 Ta = 25 C, ICLK = 32MHz *1 Ta = 25 C, ICLK = 16MHz *1 Ta = 25 C, ICLK = 8MHz *1 Ta = 25 C, ICLK = 4MHz *1 Ta = 105 C, ICLK = 32MHz *2 Ta = 105 C, ICLK = 16MHz *2 Ta = 105 C, ICLK = 8MHz *2 Ta = 105 C, ICLK = 4MHz *2 Note 1. All peripheral operations except any BGO operat ion are operating normally. This is the average of the actual measurements of the sample cores during product evaluation. Note 2. All peripheral operations except any BGO operation are operating at maximum. This is the average of the actual measurements for the upper-limit samples during product evaluation.

R01DS0309EU0120 Rev.1.20 Page 39 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.18 Voltage dependency in middle-speed mode (reference data) Note 1. All peripheral operations except any BGO operatio n are operating normally. This is the average of the actual measurements of the sample cores during product evaluation. Note 2. All peripheral operations except any BGO operation are operating at maximum. This is the average of the actual measurements for the upper-limit samples during product evaluation. VCC (V) Ta = 105 C, ICLK = 4MHz *2 Ta = 105 C, ICLK = 8MHz *2 Ta = 105 C, ICLK = 1MHz *2 Ta = 25 C, ICLK = 1MHz *1 Ta = 25 C, ICLK = 8MHz *1 Ta = 25 C, ICLK = 4MHz *1 Ta = 25 C, ICLK = 12MHz *1 Ta = 105 C, ICLK = 12MHz *2 Ta = 25 C, ICLK = 12MHz *1 Ta = 25 C, ICLK = 8MHz *1 Ta = 25 C, ICLK = 4MHz *1 Ta = 25 C, ICLK = 1MHz *1 Ta = 105 C, ICLK = 12MHz *2 Ta = 105 C, ICLK = 8MHz *2 Ta = 105 C, ICLK = 4MHz *2 Ta = 105 C, ICLK = 1MHz *2 ICC (mA)

R01DS0309EU0120 Rev.1.20 Page 40 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.19 Voltage dependency in low-speed mode (reference data) Note 1. All peripheral operations except any BGO operatio n are operating normally. This is the average of the actual measurements of the sample cores during product evaluation. Note 2. All peripheral operations except any BGO operation are operating at maximum. This is the average of the actual measurements for the upper-limit samples during product evaluation. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCC (V) Ta = 105 C, ICLK = 1MHz *2 Ta = 25 C, ICLK = 1MHz *1 Ta = 25 C, ICLK = 1MHz *1 Ta = 105 C, ICLK = 1MHz *2 ICC (mA)

R01DS0309EU0120 Rev.1.20 Page 41 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.20 Voltage dependency in low-voltage mode (reference data) Note 1. All peripheral operations except any BGO operat ion are operating normally. This is the average of the actual measurements of the sample cores during product evaluation. Note 2. All peripheral operations except any BGO operation are operating at maximum. This is the average of the actual measurements for the upper-limit samples during product evaluation. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCC (V) Ta = 25 C, ICLK = 4MHz *1 Ta = 105 C, ICLK = 4MHz *2 Ta = 105 C, ICLK = 4MHz *2 Ta = 25 C, ICLK = 4MHz *1 Ta = 105 C, ICLK = 1MHz *2 Ta = 25 C, ICLK = 1MHz *1 ICC (mA) Ta = 25 C, ICLK = 1MHz *1 Ta = 105 C, ICLK = 1MHz *2

R01DS0309EU0120 Rev.1.20 Page 42 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.21 Voltage dependency in subosc-speed mode (reference data) Note 1. Supply current values do not include output ch arge/discharge current from all pins. The values apply when internal pull-up MOS transistors are in the off state. Note 2. The IWDT and LVD are not operating. Note 3. VCC = 3.3 V. Note 4. Includes the current of low-speed on-chip oscillator or sub-oscillation circuit. Table 2.12 Operating and standby current (2) Conditions: VCC = AVCC0 = 1.6 to 5.5 V Parameter Symbol Typ* 3 Max Unit Test conditions Supply current*1 Software Standby mode* Ta = 25°C I CC 0.5 2.0 μA- Ta = 55°C 0.8 7.0 Ta = 85°C 2.9 12.0 Ta = 105°C 6.3 42.0 Increment for RTC operation with low-speed on-chip oscillator*4 0.4 - - Increment for RTC operation with sub-clock oscillator* 0.5 - SOMCR.SODRV[1:0] are 11b (Low power mode 3) 1.6 - SOMCR.SODRV[1:0] are 00b (normal mode) Note 1. All peripheral operations except any BGO operat ion are operating normally. This is the average of the actual measurements of the sample cores during product evaluation. Note 2. All peripheral operations except any BGO operation are operating at maximum. This is the average of the actual measurements for the upper-limit samples during product evaluation. Note 3. MOCO and DAC are stopped. 100 120 140 160 VCC (V) Ta = 25 C, ICLK = 32 kHz *1 Ta = 25 C, ICLK = 32 kHz *1 *3 Ta = 105 C, ICLK = 32 kHz *2 Ta = 105 C, ICLK = 32 kHz *2 Ta = 25 C, ICLK = 32 kHz *1 Ta = 25 C, ICLK = 32 kHz *1 *3 ICC (A)

R01DS0309EU0120 Rev.1.20 Page 44 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. The reference power supply current is included in the power supply current value for D/A conversion. Note 2. Current is consumed only by the USBFS. Note 3. Includes the current supplied from the pull-up resistor of the USB_DP pin to the pull-down resistor of the host device, in addition to the current consumed by the MCU in the suspended state. Note 4. When VCC = VCC_USB = 3.3 V. Note 5. When the MCU is in Software Standby mode or the MSTPCRD.MSTPD16 (ADC140 module-stop bit) is in the module-stop state. Table 2.13 Operating and standby current (3) Conditions: VCC = AVCC0 = 1.6 to 5.5 V Parameter Symbol Min Typ Max Unit Test conditions Analog power supply current During A/D conversion (at high-speed conversion) I AVCC -- 3 . 0 m A - During A/D conversion (at low-power conversion) - - 1.0 mA - During D/A conversion *1 (per channel) - - 1.6 mA - Waiting for A/D and D/A conversion (all units)*5 -- 1 . 0 μA- Reference power supply current During A/D conversion IREFH0 - - 150 μA- Waiting for A/D conversion (all units) - - 60 nA - Temperature sensor ITNS -7 5 - μA- Low-power analog comparator (ACMPLP) operating current Window comparator (high-speed mode) I CMPLP -1 5 - μA- Window comparator (low-speed mode) - 3 - μA- Comparator (high-speed mode) - 10 - μA- Comparator (low-speed mode) - 2 - μA- High-speed analog comparator (ACMPHS) operating current I CMPHS - 70 100 μA AVCC0  2.7V Operational Amplifier operating current Low power mode 1-unit operating IAMP -1 . 0 2 . 0 μA- 2-unit operating - 1.5 3.0 μA- 3-unit operating - 2.0 3.5 μA- 4-unit operating - 2.5 4.5 μA- High speed mode 1-unit operating - 200 280 μA- 2-unit operating - 320 450 μA- 3-unit operating - 440 620 μA- 4-unit operating - 560 790 μA- USB operating current During USB communication under the following settings and conditions:  Function controller is in Full-Speed mode and - Bulk OUT transfer is (64 bytes) × 1 - Bulk IN transfer is (64 bytes) × 1  Host device is connected by a 1-meter USB cable from the USB port. I USBF*2 - 3.6 (VCC) 1.1 (VCC_USB)*4 -m A - During suspended state under the following setting and conditions:  Function controller is in Full-Speed mode (the USB_DP pin is pulled up)  Software Standby mode  Host device is connected by a 1-meter USB cable from the USB port. I SUSP*3 - 0.35 (VCC) 170 (VCC_USB)*4 - μA- PWM Delay Generation Circuit current PCLKD = 64 MHz, DLL Mode = 5-bit mode ICC -3 . 3 4 . 6 m A - PCLKD = 64 MHz, DLL Mode = 4-bit mode - 3.0 4.2 mA - PCLKD = 32 MHz, DLL Mode = 5-bit mode - 2.0 2.8 mA -

R01DS0309EU0120 Rev.1.20 Page 45 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.2.10 VCC Rise and Fall Gr adient and Ripple Frequency

Note 1. When OFS1.LVDAS = 0. Note 2. At boot mode, the reset from voltage monitor 0 is disabled regardless of the value of OFS1.LVDAS bit. Figure 2.24 Ripple waveform

2.2.11 Thermal Characteristics

Maximum value of junction temperature (Tj) must not exceed the value of section 2.2.1, Tj/Ta Definition. Tj is calculated by either of the following equations.  Tj = Ta + θja × Total power consumption  Tj = Tt + Ψjt × Total power consumption Tj : Junction temperature (°C) Ta : Ambient temperature (°C) Tt : Top center case temperature (°C) θja : Thermal resistance of “Junction”-to-“Ambient” (°C/W) Ψjt : Thermal resistance of “Junction”-to-“Top center case” (°C/W)  Total power consumption = Voltage × (Leakage current + Dynamic current)  Leakage current of IO = Σ (IOL × VOL) / Voltage + Σ (|IOH| × |VCC – VOH|) / Voltage Table 2.14 Rise and fall gradient characteristics Conditions: VCC = AVCC0 = 0 to 5.5 V Parameter Symbol Min Typ Max Unit Test conditions Power-on VCC rising gradient Voltage monitor 0 reset disabled at startup SrVCC 0.02 - 2m s / V - Voltage monitor 0 reset enabled at startup*1, *2 - SCI boot mode*2 2 Table 2.15 Rising and falling gradient and ripple frequency characteristics Conditions: VCC = AVCC0 = 1.6 to 5.5 V The ripple voltage must meet the allowable ripple frequency f r(VCC) within the range between the VCC upper limit (5.5 V) and lower limit (1.6 V). When the VCC change exceeds VCC ±10%, the allowable voltage change rising and falling gradient dt/dVCC must be met. Parameter Symbol Min Typ Max Unit Test conditions Allowable ripple frequency fr (VCC) -- 10 kHz Figure 2.24 V r (VCC) ≤ VCC × 0.2 -- 1 MHz Figure 2.24 V r (VCC) ≤ VCC × 0.08 -- 10 MHz Figure 2.24 V r (VCC) ≤ VCC × 0.06 Allowable voltage change rising and falling gradient dt/dVCC 1.0 - - ms/V When VCC change exceeds VCC ±10% Vr(VCC)VCC 1/fr(VCC)

R01DS0309EU0120 Rev.1.20 Page 46 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics  Dynamic current of IO = Σ IO (Cin + Cload) × IO switching frequency × Voltage Cin: Input capacitance Cload: Output capacitance Regarding θja and Ψjt, see Table 2.16. Note: The values are reference values when the 4-layer board is used. Thermal resistance depends on the number of layers or size of the board. For details, refer to the JEDEC standards. Note 1. This value applies when the Exposed die pad for this purpose is connected to VSS. Table 2.16 Thermal Resistance Parameter Package Symbol Value Unit Test conditions Thermal Resistance 32-pin QFN θja 24.2* 1 °C/W JESD 51-2 and 51-7compliant 48-pin QFN 21.8* 1 32-pin LQFP 56.2 48-pin LQFP 57.7 64-pin LQFP 48.9 36-pin LGA 32.9 JESD 51-2 and 51-9 compliant 32-pin QFN Ψjt 0.17* 1 °C/W JESD 51-2 and 51-7 compliant 48-pin QFN 0.17* 1 32-pin LQFP 1.71 48-pin LQFP 1.71 64-pin LQFP 1.22 36-pin LGA 0.10 JESD 51-2 and 51-9 compliant

R01DS0309EU0120 Rev.1.20 Page 47 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.3 AC Characteristics

2.3.1 Frequency

Note 1. The lower-limit frequency of ICLK is 1 MHz while programming or erasing the flash memory. When using ICLK for programming or erasing the flash memory at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 2. The frequency accuracy of ICLK must be ±3.5% duri ng programming or erasing the flash memory. Confirm the frequency accuracy of the clock source. Note 3. The lower-limit frequency of PCLKD is 4 MHz at 2.4 V or above and 1 MHz at below 2.4 V when the 14-bit A/D converter is in use. Note 4. See section 8, Clock Generation Circuit in User ʼs Manual for the relationship of frequencies between ICLK, PCLKB, and PCLKD. Note 5. The maximum value of operation frequency does not include internal oscillator errors. For details on the range of guaranteed operation, see Table 2.22, Clock timing. Note 1. The lower-limit frequency of ICLK is 1 MHz while programming or erasing the flash memory. When using ICLK for programming or erasing the flash memory at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 2. The frequency accuracy of ICLK must be ±3.5% duri ng programming or erasing the flash memory. Confirm the frequency accuracy of the clock source. Note 3. The lower-limit frequency of PCLKD is 4 MHz at 2.4 V or above and 1 MHz at below 2.4 V when the 14-bit A/D converter is in use. Note 4. See section 8, Clock Generation Circuit in User ʼs Manual for the relationship of frequencies between ICLK, PCLKB, and PCLKD. Note 5. The maximum value of operation frequency does not include internal oscillator errors. For details on the range of guaranteed operation, see Table 2.22, Clock timing. Table 2.17 Operation frequency in high-speed operating mode Conditions: VCC = AVCC0 = 2.4 to 5.5 V Parameter Symbol Min Typ Max* 5 Unit Operation frequency System clock (ICLK)*1, *2, *4 2.7 to 5.5 V f 0.032768 - 32 MHz 2.4 to 2.7 V 0.032768 - 16 Peripheral module clock (PCLKB)*4 2.7 to 5.5 V - - 32 2.4 to 2.7 V - - 16 Peripheral module clock (PCLKD)*3, 2.7 to 5.5 V - - 64 2.4 to 2.7 V - - 16 Table 2.18 Operation frequency in middle-speed mode Conditions: VCC = AVCC0 = 1.8 to 5.5 V Parameter Symbol Min Typ Max* 5 Unit Operation frequency System clock (ICLK)*1, *2, *4 2.7 to 5.5 V f 0.032768 - 12 MHz 2.4 to 2.7 V 0.032768 - 12 1.8 to 2.4 V 0.032768 - 8 Peripheral module clock (PCLKB)*4 2.7 to 5.5 V - - 12 2.4 to 2.7 V - - 12 1.8 to 2.4 V - - 8 Peripheral module clock (PCLKD)*3, *4 2.7 to 5.5 V - - 12 2.4 to 2.7 V - - 12 1.8 to 2.4 V - - 8

R01DS0309EU0120 Rev.1.20 Page 48 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. The lower-limit frequency of ICLK is 1 MH z while programming or erasing the flash memory. Note 2. The frequency accuracy of ICLK must be ±3.5% duri ng programming or erasing the flash memory. Confirm the frequency accuracy of the clock source. Note 3. The lower-limit frequency of PCLKD is 1 MHz when the A/D converter is in use. Note 4. See section 8, Clock Generation Circuit in User ʼs Manual for the relationship of frequencies between ICLK, PCLKB, and PCLKD. Note 5. The maximum value of operation frequency does not include internal oscillator errors. For details on the range of guaranteed operation, see Table 2.22, Clock timing. Note 1. The lower-limit frequency of ICLK is 1 MHz while programming or erasing the flash memory. When using ICLK for programming or erasing the flash memory at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 2. The frequency accuracy of ICLK must be ±3.5% duri ng programming or erasing the flash memory. Confirm the frequency accuracy of the clock source. Note 3. The lower-limit frequency of PCLKD is 4 MHz at 2.4 V or above and 1 MHz at below 2.4 V when the 14-bit A/D converter is in use. Note 4. See section 8, Clock Generation Circuit in User ʼs Manual for the relationship of frequencies between ICLK, PCLKB, and PCLKD. Note 5. The maximum value of operation frequency does not include internal oscillator errors. For details on the range of guaranteed operation, see Table 2.22, Clock timing. Note 1. Programming and erasing the flash memory is not possible. Note 2. The 14-bit A/D converter cannot be used. Note 3. See section 8, Clock Generation Circuit in Userʼs Manual for the relationship between ICLK, PCLKB, and PCLKD frequencies. Table 2.19 Operation frequency in low-speed mode Conditions: VCC = AVCC0 = 1.8 to 5.5 V Parameter Symbol Min Typ Max* 5 Unit Operation frequency System clock (ICLK)*1, *2, *4 1.8 to 5.5 V f 0.032768 - 1 MHz Peripheral module clock (PCLKB)*4 1.8 to 5.5 V - - 1 Peripheral module clock (PCLKD)*3, *4 1.8 to 5.5 V - - 1 Table 2.20 Operation frequency in low-voltage mode Conditions: VCC = AVCC0 = 1.6 to 5.5 V Parameter Symbol Min Typ Max* 5 Unit Operation frequency System clock (ICLK)*1, *2, *4 1.6 to 5.5 V f 0.032768 - 4 MHz Peripheral module clock (PCLKB)*4 1.6 to 5.5 V - - 4 Peripheral module clock (PCLKD)*3, *4 1.6 to 5.5 V - - 4 Table 2.21 Operation frequency in Subosc-speed mode Conditions: VCC = AVCC0 = 1.8 to 5.5 V Parameter Symbol Min Typ Max Unit Operation frequency Peripheral module clock (PCLKB)*3 1.8 to 5.5 V - - 37.6832 Peripheral module clock (PCLKD)*2, *3 1.8 to 5.5 V - - 37.6832

R01DS0309EU0120 Rev.1.20 Page 49 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.3.2 Clock Timing

Table 2.22 Clock timing (1 of 2) Parameter Symbol Min Typ Max Unit Test conditions EXTAL external clock input cycle time tXcyc 50 - - ns Figure 2.25 EXTAL external clock input high pulse width tXH 20 - - ns EXTAL external clock input low pulse width tXL 20 - - ns EXTAL external clock rising time tXr --5 n s EXTAL external clock falling time tXf --5 n s EXTAL external clock input wait time*1 tEXWT 0.3 - - μs- EXTAL external clock input frequency fEXTAL - - 20 MHz 2.4 ≤ VCC ≤ 5.5 Main clock oscillator oscillation frequency fMAIN 1 - 20 MHz 2.4 ≤ VCC ≤ 5.5 1- 8 1.8 ≤ VCC < 2.4 1- 4 1.6 ≤ VCC < 1.8 LOCO clock oscillation frequency fLOCO 27.8528 32.768 37.6832 kHz - LOCO clock oscillation stabilization time t LOCO --1 00 μs Figure 2.26 IWDT-dedicated clock oscillation frequency fILOCO 12.75 15 17.25 kHz - MOCO clock oscillation frequency f MOCO 6 . 88 9 . 2M H z - MOCO clock oscillation stabilization time t MOCO --1 μs- HOCO clock oscillation frequency f HOCO24 23.64 24 24.36 MHz Ta = -40 to -20°C 1.8 ≤ VCC ≤ 5.5 22.68 24 25.32 Ta = -40 to 85°C 1.6 ≤ VCC < 1.8 23.76 24 24.24 Ta = -20 to 85°C 1.8 ≤ VCC ≤ 5.5 23.52 24 24.48 Ta = 85 to 105°C 2.4 ≤ VCC ≤ 5.5 fHOCO32 31.52 32 32.48 Ta = -40 to -20°C 1.8 ≤ VCC ≤ 5.5 30.24 32 33.76 Ta = -40 to 85°C 1.6 ≤ VCC < 1.8 31.68 32 32.32 Ta = -20 to 85°C 1.8 ≤ VCC ≤ 5.5 31.36 32 32.64 Ta = 85 to 105°C 2.4 ≤ VCC ≤ 5.5 fHOCO48*3 47.28 48 48.72 Ta = -40 to -20°C 1.8 ≤ VCC ≤ 5.5 47.52 48 48.48 Ta = -20 to 85°C 1.8 ≤ VCC ≤ 5.5 47.04 48 48.96 Ta = 85 to 105°C 2.4 ≤ VCC ≤ 5.5 fHOCO64*4 63.04 64 64.96 Ta = -40 to -20°C 2.4 ≤ VCC ≤ 5.5 63.36 64 64.64 Ta = -20 to 85°C 2.4 ≤ VCC ≤ 5.5 62.72 64 65.28 Ta = 85 to 105°C 2.4 ≤ VCC ≤ 5.5 HOCO clock oscillation stabilization time*5, *6 Except low- voltage mode tHOCO24 tHOCO32 --3 7.1 μs Figure 2.27 tHOCO48 --4 3.3 tHOCO64 --8 0.6 Low-voltage mode tHOCO24 tHOCO32 tHOCO48 tHOCO64 - - 100.9 Sub-clock oscillator oscillation frequency fSUB - 32.768 - kHz -

R01DS0309EU0120 Rev.1.20 Page 51 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.3.3 Reset Timing

Note 1. When OFS1.LVDAS = 0. Note 2. When OFS1.LVDAS = 1. Figure 2.29 Reset input timing at power-on Figure 2.30 Reset input timing Table 2.23 Reset timing Parameter Symbol Min Typ Max Unit Test conditions RES pulse width At power-on t RESWP 3- - m s Figure 2.29 Not at power-on t RESW 30 - - μs Figure 2.30 Wait time after RES cancellation (at power-on) LVD0 enabled*1 tRESWT -0 . 7 -m s Figure 2.29 LVD0 disabled*2 -0 . 3 - Wait time after RES cancellation (during powered-on state) LVD0 enabled*1 tRESWT2 -0 . 5 -m s Figure 2.30 LVD0 disabled*2 -0 . 0 5 - Wait time after internal reset cancellation (watchdog timer reset, SRAM parity error reset, SRAM ECC error reset, bus master MPU error reset, bus slave MPU error reset, stack pointer error reset, software reset) LVD0 enabled* 1 tRESWT3 -0 . 6 -m s LVD0 disabled*2 -0 . 1 5 - VCC RES tRESWP Internal reset tRESWT RES Internal reset tRESWT2 tRESW

R01DS0309EU0120 Rev.1.20 Page 52 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.3.4 Wakeup Time

Note 1. The division ratio of ICK and PCKx is the minimum division ratio within the allowable frequency range. The recovery time is determined by the system clock source. Note 2. The Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 05h. Note 3. The Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 00h. Note 4. The HOCO clock wait control register (HOCOWTCR) is set to 05h. Note 5. The HOCO clock wait control register (HOCOWTCR) is set to 06h. Note 1. The division ratio of ICK and PCKx is the minimum division ratio within the allowable frequency range. The recovery time is determined by the system clock source. Note 2. The Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 05h. Note 3. The Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 00h. Note 4. The system clock is 12 MHz. Table 2.24 Timing of recovery from low power modes (1) Parameter Symbol Min Typ Max Unit Test conditions Recovery time from Software Standby mode*1 High-speed mode Crystal resonator connected to main clock oscillator System clock source is main clock oscillator (20 MHz) tSBYMC -2 3m s Figure 2.31 External clock input to main clock oscillator System clock source is main clock oscillator (20 MHz) tSBYEX -1 4 25 μs System clock source is HOCO*4 (HOCO clock is 32 MHz) tSBYHO - 43 52 μs System clock source is HOCO*4 (HOCO clock is 48 MHz) tSBYHO - 44 52 μs System clock source is HOCO*5 (HOCO clock is 64 MHz) tSBYHO - 82 110 μs System clock source is MOCO t SBYMO - 16 25 μs Table 2.25 Timing of recovery from low power modes (2) Parameter Symbol Min Typ Max Unit Test conditions Recovery time from Software Standby mode*1 Middle-speed mode Crystal resonator connected to main clock oscillator System clock source is main clock oscillator (12 MHz) tSBYMC - 23 m s Figure 2.31 External clock input to main clock oscillator System clock source is main clock oscillator (12 MHz)*3 tSBYEX - 2.9 10 μs System clock source is HOCO*4 tSBYHO - 38 50 μs System clock source is MOCO (8 MHz) t SBYMO - 3.5 5.5 μs

R01DS0309EU0120 Rev.1.20 Page 53 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. The division ratio of ICK and PCKx is the minimum division ratio within the allowable frequency range. The recovery time is determined by the system clock source. Note 2. The Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 05h. Note 3. The Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 00h. Note 1. The division ratio of ICK and PCKx is the minimum division ratio within the allowable frequency range. The recovery time is determined by the system clock source. Note 2. The Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 05h. Note 3. The Main Clock Oscillator Wait Control Register (MOSCWTCR) is set to 00h. Note 1. The sub-clock oscillator or LOCO itself continues oscillating in Software Standby mode during Subosc-speed mode. Table 2.26 Timing of recovery from low power modes (3) Parameter Symbol Min Typ Max Unit Test conditions Recovery time from Software Standby mode*1 Low-speed mode Crystal resonator connected to main clock oscillator System clock source is main clock oscillator (1 MHz) tSBYMC - 23m s Figure 2.31 External clock input to main clock oscillator System clock source is main clock oscillator (1 MHz)*3 tSBYEX - 28 50 μs System clock source is MOCO (1 MHz) t SBYMO - 25 35 μs Table 2.27 Timing of recovery from low power modes (4) Parameter Symbol Min Typ Max Unit Test conditions Recovery time from Software Standby mode*1 Low-voltage mode Crystal resonator connected to main clock oscillator System clock source is main clock oscillator (4 MHz)*2 tSBYMC - 23m s Figure 2.31 External clock input to main clock oscillator System clock source is main clock oscillator (4 MHz)*3 tSBYEX - 108 130 μs System clock source is HOCO (4 MHz) tSBYHO - 108 130 μs Table 2.28 Timing of recovery from low power modes (5) Parameter Symbol Min Typ Max Unit Test conditions Recovery time from Software Standby mode* SubOSC-speed mode System clock source is sub-clock oscillator (32.768 kHz) tSBYSC -0 . 8 5 1m s Figure 2.31 System clock source is LOCO (32.768 kHz) t SBYLO - 0.85 1.2 ms

R01DS0309EU0120 Rev.1.20 Page 54 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.31 Software Standby mode cancellation timing Table 2.29 Timing of recovery from low power modes (6) Parameter Symbol Min Typ Max Unit Test conditions Recovery time from Software Standby mode to Snooze mode High-speed mode System clock source is HOCO t SNZ -3 6 4 5 μs Figure 2.32 Middle-speed mode System clock source is MOCO (8 MHz) t SNZ -1 . 3 3 . 6 μs Low-speed mode System clock source is MOCO (1 MHz) t SNZ -1 0 1 3 μs Low-voltage mode System clock source is HOCO (4 MHz) t SNZ -8 7 1 1 0 μs Oscillator ICLK IRQ Software Standby mode tSBYSC, tSBYLO Oscillator ICLK IRQ Software Standby mode tSBYMC, tSBYEX, tSBYMO, tSBYHO

R01DS0309EU0120 Rev.1.20 Page 55 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.32 Recovery timing from Software Standby mode to Snooze mode

2.3.5 NMI and IRQ Noise Filter

Note: 200 ns minimum in Software Standby mode. Note 1. t Pcyc indicates the PCLKB cycle. Note 2. t NMICK indicates the cycle of the NMI digital filter sampling clock. Note 3. t IRQCK indicates the cycle of the IRQi digital filter sampling clock (i = 0 to 7). Figure 2.33 NMI interrupt input timing Figure 2.34 IRQ interrupt input timing Table 2.30 NMI and IRQ noise filter Parameter Symbol Min Typ Max Unit Test conditions NMI pulse width t NMIW 200 -- ns NMI digital filter disabled tPcyc × 2 ≤ 200 ns tPcyc × 2*1 -- tPcyc × 2 > 200 ns 200 -- NMI digital filter enabled tNMICK × 3 ≤ 200 ns tNMICK × 3.5*2 -- tNMICK × 3 > 200 ns IRQ pulse width t IRQW 200 -- ns IRQ digital filter disabled tPcyc × 2 ≤ 200 ns tPcyc × 2*1 -- tPcyc × 2 > 200 ns 200 -- IRQ digital filter enabled tIRQCK × 3 ≤ 200 ns tIRQCK × 3.5*3 -- tIRQCK × 3 > 200 ns Note 1. W hen SNZCR.SNZDTCEN is set to 1, ICLK is supplied to DTC and SRAM. tSNZ IRQ ICLK (to DTC, SRAM) *1 PCLK ICLK (except DTC, SRAM) Oscillator Software Standby mode Snooze mode tNMIW NMI tIRQW IRQ

R01DS0309EU0120 Rev.1.20 Page 56 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.3.6 I/O Ports, POEG , GPT, AGT, KINT, and ADC14 Trigger Timing

Note 1. Constraints on AGTIO input: t Pcyc × 2 (tPcyc: PCLKB cycle) < tACYC. Figure 2.35 I/O ports input timing Figure 2.36 POEG in put trigger timing Table 2.31 I/O Ports, POEG, GPT, AGT, KINT, and ADC14 trigger timing Parameter Symbol Min Max Unit Test conditions I/O Ports Input data pulse width tPRW 1.5 - tPcyc Figure 2.35 Input/output data cycle (P002, P003, P010, P011) t POcyc 10 - μs- POEG POEG input trigger pulse width tPOEW 3 - tPcyc Figure 2.36 GPT Input capture pulse width Single edge t GTICW 1.5 - tPDcyc Figure 2.37 Dual edge 2.5 - AGT AGTIO, AGTEE input cycle 2.7 V ≤ VCC ≤ 5.5 V t ACYC*1 250 - ns Figure 2.38 2.4 V ≤ VCC < 2.7 V 500 - ns 1.8 V ≤ VCC < 2.4 V 1000 - ns 1.6 V ≤ VCC < 1.8 V 2000 - ns AGTIO, AGTEE input high level width, low-level width 2.7 V ≤ VCC ≤ 5.5 V t ACKWH, tACKWL 100 - ns 2.4 V ≤ VCC < 2.7 V 200 - ns 1.8 V ≤ VCC < 2.4 V 400 - ns 1.6 V ≤ VCC < 1.8 V 800 - ns AGTIO, AGTO, AGTOA, AGTOB output cycle 2.7 V ≤ VCC ≤ 5.5 V t ACYC2 62.5 - ns Figure 2.38 2.4 V ≤ VCC < 2.7 V 125 - ns 1.8 V ≤ VCC < 2.4 V 250 - ns 1.6 V ≤ VCC < 1.8 V 500 - ns ADC14 14-bit A/D converter trigger input pulse width t TRGW 1.5 - tPcyc Figure 2.39 KINT KRn (n = 00 to 07) pulse width t KR 250 - ns Figure 2.40 Port tPRW POEG input trigger tPOEW

R01DS0309EU0120 Rev.1.20 Page 57 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.37 GPT input capture timing Figure 2.38 AGT I/O timing Figure 2.39 ADC14 trigger input timing Figure 2.40 Key inte rrupt input timing

2.3.7 PWM Delay Generation Circuit Timing

Table 2.32 PWM delay generation circuit timing Conditions: VCC = AVCC0 = 2.7 to 5.5 V 32 MHz ≤ PCLKD ≤ 64 MHz Parameter Min Typ Max Unit Test conditions Resolution PCLKD = 64 MHz, DLL Mode = 5-bit mode - 488 - ps - PCLKD = 64 MHz, DLL Mode = 4-bit mode - 976 - ps - PCLKD = 32 MHz, DLL Mode = 5-bit mode - 976 - ps - DNL*1, *2 -5 -L S B - Input capture tGTICW tACYC2 AGTIO, AGTEE (input) tACYC tACKWL tACKWH AGTIO, AGTO, AGTOA, AGTOB (output) ADTRG0 tTRGW KR00 to KR07 tKR

R01DS0309EU0120 Rev.1.20 Page 58 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. The differences among lines in 1-LSB resolution are normalized by this value. Note 2. The drive capability of the PWM delay generation circuit output port is middle drive.

2.3.8 CAC Timing

Note 1. t Pcyc: PCLKB cycle. Note 2. t cac: CAC count clock source cycle.

2.3.9 SCI Timing

Note 1. t Pcyc: PCLKB cycle. Table 2.33 CAC timing Parameter Symbol Min Typ Max Unit Test conditions CAC CACREF input pulse width t Pcyc *1 ≤ tcac*2 tCACREF 4.5 × tcac + 3 × tPcyc -- ns - tPcyc*1 > tcac*2 5 × tcac + 6.5 × tPcyc -- ns Table 2.34 SCI timing (1) Conditions: VCC = AVCC0 = 1.6 to 5.5 V Parameter Symbol Min Max Unit*1 Test conditions SCI Input clock cycle Asynchronous tScyc 4 - tPcyc Figure 2.41 Clock synchronous 6 - Input clock pulse width tSCKW 0.4 0.6 tScyc Input clock rise time tSCKr -2 0 n s Input clock fall time tSCKf -2 0 n s Output clock cycle Asynchronous tScyc 6 - tPcyc Clock synchronous 4 - Output clock pulse width tSCKW 0.4 0.6 tScyc Output clock rise time 1.8V or above t SCKr -2 0 n s 1.6V or above - 30 Output clock fall time 1.8V or above t SCKf -2 0 n s 1.6V or above - 30 Transmit data delay (master) Clock synchro nous 1.8V or above t TXD -4 0 n s Figure 2.42 1.6V or above - 45 Transmit data delay (slave) Clock synchro nous 2.7V or above - 55 ns 2.4V or above - 60 1.8V or above - 100 1.6V or above - 125 Receive data setup time (master) Clock synchro nous 2.7V or above t RXS 45 - ns 2.4V or above 55 - 1.8V or above 90 - 1.6V or above 110 - Receive data setup time (slave) Clock synchro nous 2.7V or above 40 - ns 1.6V or above 45 - Receive data hold time (master) Clock synchronous t RXH 5 - ns Receive data hold time (slave) Clock synchronous t RXH 40 - ns

R01DS0309EU0120 Rev.1.20 Page 60 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. t Pcyc: PCLKB cycle. Table 2.35 SCI timing (2) Conditions: VCC = AVCC0 = 1.6 to 5.5 V Parameter Symbol Min Max Unit*1 Test conditions Simple SPI SCK clock cycle output (master) t SPcyc 4 65536 t Pcyc Figure 2.43 SCK clock cycle input (slave) 6 65536 SCK clock high pulse width t SPCKWH 0.4 0.6 tSPcyc SCK clock low pulse width tSPCKWL 0.4 0.6 tSPcyc SCK clock rise and fall time 1.8V or above tSPCKr, tSPCKf -2 0 n s 1.6V or above -3 0 Data input setup time Master 2.7V or above t SU 45 - ns Figure 2.44 to Figure 2.472.4V or above 55 - 1.8V or above 80 - 1.6V or above 110 - Slave 2.7V or above 40 - 1.6V or above 45 - Data input hold time Master t H 33.3 - ns Slave 40 - SS input setup time tLEAD 1- t SPcyc SS input hold time tLAG 1- t SPcyc Data output delay Master 1.8V or above t OD -4 0 n s 1.6V or above - 50 Slave 2.4V or above - 65 1.8V or above - 100 1.6V or above - 125 Data output hold time Master 2.7V or above t OH -10 - ns 2.4V or above -20 - 1.8V or above -30 - 1.6V or above -40 - Slave -10 - Data rise and fall time Master tDr, tDf -2 0 n s Slave 1.8V or above - 20 1.6V or above - 30 Simple SPI Slave access time tSA -6t Pcyc Figure 2.47 Slave output release time t REL -6t Pcyc

R01DS0309EU0120 Rev.1.20 Page 63 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.47 SCI simple SPI mode timing (slave, CKPH = 0) Note: t IICcyc: IIC internal reference clock (IICφ) cycle. Note 1. Cb indicates the total capacity of the bus line. Table 2.36 SCI timing (3) Conditions: VCC = AVCC0 = 2.7 to 5.5 V Parameter Symbol Min Max Unit Test conditions Simple IIC (Standard mode) SDA input rise time t Sr - 1000 ns Figure 2.48 SDA input fall time t Sf - 300 ns SDA input spike pulse removal time t SP 04 × tIICcyc ns Data input setup time tSDAS 250 - ns Data input hold time tSDAH 0 - ns SCL, SDA capacitive load C b*1 - 400 pF Simple IIC (Fast mode) SDA input rise time t Sr - 300 ns Figure 2.48 SDA input fall time tSf - 300 ns SDA input spike pulse removal time t SP 04 × tIICcyc ns Data input setup time t SDAS 100 - ns Data input hold time tSDAH 0 - ns SCL, SDA capacitive load Cb*1 - 400 pF tDr, tDf tSA tOH tLEAD tTD tLAG tH LSB OUT (Last data) DATA MSB OUT MSB IN DATA LSB IN MSB IN LSB OUT tSU tOD tREL MSB OUT SSn input SCKn CKPOL = 1 input SCKn CKPOL = 0 input MISOn output MOSIn input (n = 0, 1, 9)

R01DS0309EU0120 Rev.1.20 Page 64 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.48 SCI simple IIC mode timing

2.3.10 SPI Timing

Table 2.37 SPI timing (1 of 2) Conditions: Middle drive output is selected in the Port Drive Capability bit in the PmnPFS register. Parameter Symbol Min Max Unit *1 Test conditions SPI RSPCK clock cycle Master tSPcyc 2 4096 t Pcyc Figure 2.49 C = 30PFSlave 6 4096 RSPCK clock high pulse width Master t SPCKWH (tSPcyc - tSPCKr - tSPCKf) / 2 - - ns Slave 3 × t Pcyc - RSPCK clock low pulse width Master t SPCKWL (tSPcyc - tSPCKr - tSPCKf) / 2 - - ns Slave 3 × t Pcyc - RSPCK clock rise and fall time Output 2.7V or above t SPCKr, tSPCKf -1 0 n s 2.4V or above - 15 1.8V or above - 20 1.6V or above - 30 Input - 1 µs SDAn SCLn VIH VIL P*1 S*1 tSftSr tSDAH tSDAS tSP P*1 Test conditions: VIH = VCC × 0.7, VIL = VCC × 0.3 VOL = 0.6 V, IOL = 6 mA Sr*1 Note 1. S, P, and Sr indicate the following: S: Start condition P: Stop condition Sr: Restart condition (n = 0,1,9)

R01DS0309EU0120 Rev.1.20 Page 69 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.55 SPI timing (slave, CPHA = 1) SSLn0 input RSPCKn CPOL = 0 input RSPCKn CPOL = 1 input MISOn output MOSIn input tDr, tDf tSA tOH tLEAD tTD tLAG tH LSB OUT (Last data) DATA MSB OUT MSB IN DATA LSB IN MSB IN LSB OUT tSU tOD tREL MSB OUT n = A or B

R01DS0309EU0120 Rev.1.20 Page 70 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.3.11 IIC Timing

Note: t IICcyc: IIC internal reference clock (IICφ) cycle, tPcyc: PCLKB cycle Note 1. Values in parentheses apply when ICMR3.NF[1:0] is set to 11b while the digital filter is enabled with ICFER.NFE set to 1. Table 2.38 IIC timing Conditions: VCC = AVCC0 = 2.7 to 5.5 V Parameter Symbol Min* 1 Max Unit Test conditions IIC (standard mode, SMBus) SCL input cycle time t SCL 6 (12) × tIICcyc + 1300 - ns Figure 2.56 SCL input high pulse width tSCLH 3 (6) × tIICcyc + 300 - ns SCL input low pulse width tSCLL 3 (6) × tIICcyc + 300 - ns SCL, SDA input rise time tSr - 1000 ns SCL, SDA input fall time tSf - 300 ns SCL, SDA input spike pulse removal time t SP 0 1 (4) × tIICcyc ns SDA input bus free time (When wakeup function is disabled) t BUF 3 (6) × tIICcyc + 300 - ns SDA input bus free time (When wakeup function is enabled) t BUF 3 (6) × tIICcyc + 4 × tPcyc + 300 - ns START condition input hold time (When wakeup function is disabled) t STAH tIICcyc + 300 - ns START condition input hold time (When wakeup function is enabled) t STAH 1 (5) × tIICcyc + tPcyc + 300 - ns Repeated START condition input setup time t STAS 1000 - ns STOP condition input setup time t STOS 1000 - ns Data input setup time tSDAS tIICcyc + 50 - ns Data input hold time tSDAH 0 - ns SCL, SDA capacitive load C b - 400 pF IIC (Fast mode) SCL input cycle time tSCL 6 (12) × tIICcyc + 600 - ns Figure 2.56 SCL input high pulse width tSCLH 3 (6) × tIICcyc + 300 - ns SCL input low pulse width tSCLL 3 (6) × tIICcyc + 300 - ns SCL, SDA input rise time tSr - 300 ns SCL, SDA input fall time tSf - 300 ns SCL, SDA input spike pulse removal time tSP 0 1 (4) × tIICcyc ns SDA input bus free time (When wakeup function is disabled) t BUF 3 (6) × tIICcyc + 300 - ns SDA input bus free time (When wakeup function is enabled) t BUF 3 (6) × tIICcyc + 4 × tPcyc + 300 - ns START condition input hold time (When wakeup function is disabled) t STAH tIICcyc + 300 - ns START condition input hold time (When wakeup function is enabled) t STAH 1(5) × tIICcyc + tPcyc + 300 - ns Repeated START condition input setup time t STAS 300 - ns STOP condition input setup time t STOS 300 - ns Data input setup time tSDAS tIICcyc + 50 - ns Data input hold time tSDAH 0 - ns SCL, SDA capacitive load Cb - 400 pF

R01DS0309EU0120 Rev.1.20 Page 71 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.56 I 2C bus interface input/output timing

2.3.12 CLKOUT Timing

Note 1. When the EXTAL external clock input or an oscillat or divided by 1 (the CKOCR.CKOSEL[2:0] bits are 011b and the CKOCR.CKODIV[2:0] bits are 000b) is used for output from CLKOUT, specifications in Table 2.39 should be satisfied with 45% to 55% of input duty cycle. Note 2. When MOCO is selected as the clock output source (the CKOCR.CKOSEL[2:0] bits are 001b), set the clock output division ratio to 2 (the CKOCR.CKODIV[2:0] bits are 001b). Table 2.39 CLKOUT timing Parameter Symbol Min Max Unit Test conditions CLKOUT CLKOUT pin output cycle* 1 VCC = 2.7 V or above t Ccyc 62.5 - ns Figure 2.57 VCC = 1.8 V or above 125 - VCC = 1.6 V or above 250 - CLKOUT pin high pulse width*2 VCC = 2.7 V or above t CH 15 - ns VCC = 1.8 V or above 30 - VCC = 1.6 V or above 150 - CLKOUT pin low pulse width*2 VCC = 2.7 V or above t CL 15 - ns VCC = 1.8 V or above 30 - VCC = 1.6 V or above 150 - CLKOUT pin output rise time VCC = 2.7 V or above t Cr -1 2 n s VCC = 1.8 V or above - 25 VCC = 1.6 V or above - 50 CLKOUT pin output fall time VCC = 2.7 V or above t Cf -1 2 n s VCC = 1.8 V or above - 25 VCC = 1.6 V or above - 50 SDA0 and SDA1 SCL0 and SCL1 VIH VIL tSTAH tSCLH tSCLL P*1 S*1 tSf tSr tSCL tSDAH tSDAS tSTAS tSP tSTOS P*1 tBUF Sr*1 Note 1. S, P, and Sr indica te the following conditions. S: Start condition P: Stop condition Sr: Restart condition

R01DS0309EU0120 Rev.1.20 Page 72 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.57 CLKOUT output timing tCH Test conditions: VOH = VCC × 0.7, VOL = VCC × 0.3, IOH = -1.0 mA, IOL = 1.0 mA, C = 30 pF tCf tCcyc CLKOUT pin output tCr tCL

R01DS0309EU0120 Rev.1.20 Page 73 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.4 USB Characteristics

2.4.1 USBFS Timing

Figure 2.58 USB_DP and USB_DM output timing Table 2.40 USB characteristics Conditions: VCC = AVCC0 = VCC_USB = 3.0 to 3.6 V, Ta = -20 to +85°C Parameter Symbol Min Max Unit Test conditions Input characteristics Input high level voltage V IH 2.0 - V - Input low level voltage V IL -0 .8 V - Differential input sensitivity V DI 0.2 - V | USB_DP - USB_DM | Differential common mode range VCM 0.8 2.5 V - Output characteristics Output high level voltage V OH 2.8 VCC_USB V I OH = -200 μA Output low level voltage V OL 0.0 0.3 V I OL= 2 mA Cross-over voltage V CRS 1.3 2.0 V Figure 2.58, Figure 2.59, Figure 2.60Rise time FS t r 42 0 n s LS 75 300 Fall time FS t f 42 0 n s LS 75 300 Rise/fall time ratio FS t r/tf 90 111.11 % LS 80 125 Output resistance Z DRV 28 44 Ω (Adjusting the resistance of external elements is not necessary.) VBUS characteristics VBUS input voltage V IH VCC × 0.8 - V - VIL -V CC × 0.2 V - Pull-up, pull-down Pull-down resistor R PD 14.25 24.80 kΩ - Pull-up resistor RPUI 0.9 1.575 kΩ During idle state RPUA 1.425 3.09 kΩ During reception Battery Charging Specification Ver 1.2 D + sink current I DP_SINK 25 175 μA- D - sink current IDM_SINK 25 175 μA- DCD source current I DP_SRC 71 3 μA- Data detection voltage V DAT_REF 0.25 0.4 V - D + source voltage V DP_SRC 0.5 0.7 V Output current = 250 μ A D - source voltage V DM_SRC 0.5 0.7 V Output current = 250 μ A USB_DP, USB_DM tftr 90% 10%10% 90%VCRS

R01DS0309EU0120 Rev.1.20 Page 74 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.59 Test circuit for Full-Speed (FS) connection Figure 2.60 Test circuit for Low-Speed (LS) connection

2.4.2 USB External Supply

Table 2.41 USB regulator Parameter Min Typ Max Unit Test conditions VCC_USB supply current VCC_USB_LDO ≥ 3.8V -- 50 mA - VCC_USB_LDO ≥ 4.5V -- 100 mA - VCC_USB supply voltage 3.0 - 3.6 V - Observation point 50 pF USB_DP USB_DM 50 pF Observation point 200 pF to 600 pF USB_DP USB_DM 200 pF to 600 pF 1.5 K 3.6 V Observation point

R01DS0309EU0120 Rev.1.20 Page 75 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.5 ADC14 Characteristics

Figure 2.61 AVCC0 to VREFH0 voltage range Table 2.42 A/D conversion characteristics (1) in high-speed A/D conversion mode (1 of 2) Conditions: VCC = AVCC0 = 4.5 to 5.5 V, VREFH0 = 4.5 to 5.5 V, VSS = AVSS0 = VREFL0 = 0V Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions Frequency 1 - 64 MHz - Analog input capacitance*2 Cs - - 8 (reference data) pF High-precision channel - - 9 (reference data) pF Normal-precision channel Analog input resistance Rs - - 2.5 (reference data) k Ω High-precision channel - - 6.7 (reference data) k Ω Normal-precision channel Analog input voltage range Ain 0 - VREFH0 V - 12-bit mode Resolution - - 12 Bit - Conversion time*1 (Operation at PCLKD = 64 MHz) Permissible signal source impedance Max. = 0.3 kΩ 0.70 - - μs High-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 0Dh 1.13 - - μs Normal-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 28h Offset error - ±0.5 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Full-scale error - ±0.75 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±1.25 ±5.0 LSB High-precision channel ±8.0 LSB Other than above DNL differential nonlinearity error - ±1.0 - LSB - INL integral nonlinearity error - ±1.0 ±3.0 LSB - 14-bit mode Resolution - - 14 Bit - VREFH0 5.0 4.0 3.0 2.0 1.0 A/D Conversion Characteristics (2) ADCSR.ADHSC = 0 5.5 2.7 2.4 2.4 2.7 5.5 AVCC0 VREFH0 5.0 4.0 3.0 2.0 1.0 ADCSR.ADHSC = 1 5.5 2.7 2.4 2.4 2.7 5.5 AVCC0 1.8 1.8 A/D Conversion Characteristics (1) A/D Conversion Characteristics (3) A/D Conversion Characteristics (4) A/D Conversion Characteristics (5) A/D Conversion Characteristics (6) A/D Conversion Characteristics (7) 1.6 1.6

R01DS0309EU0120 Rev.1.20 Page 76 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than 14-bit A/D converter input are used. Absolute accuracy does not include quantization errors. Offset error, full-scale error, DNL differential nonlinearity error, and INL integral nonlinearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time and the comparison time. The number of sampling states is indicated for the test conditions. Note 2. Except for I/O input capacitance (Cin), see section section 2.2.4, I/O VOH, VOL, and Other Characteristics. Conversion time*1 (Operation at PCLKD = 64 MHz) Permissible signal source impedance Max. = 0.3 kΩ 0.80 - - μs High-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 0Dh 1.22 - - μs Normal-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 28h Offset error - ±2.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Full-scale error - ±3.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±5.0 ±20 LSB High-precision channel ±32.0 LSB Other than above DNL differential nonlinearity error - ±4.0 - LSB - INL integral nonlinearity error - ±4.0 ±12.0 LSB - Table 2.43 A/D conversion characteristics (2) in high-speed A/D conversion mode (1 of 2) Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VREFH0 = 2.7 to 5.5 V, VSS = AVSS0 = VREFL0 = 0V Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions Frequency 1 - 48 MHz - Analog input capacitance*2 Cs - - 8 (reference data) pF High-precision channel --9 (reference data) pF Normal-precision channel Analog input resistance Rs - - 2.5 (reference data) kΩ High-precision channel - - 6.7 (reference data) kΩ Normal-precision channel Analog input voltage range Ain 0 - VREFH0 V - 12-bit mode Resolution - - 12 Bit - Conversion time* (Operation at PCLKD = 48 MHz) Permissible signal source impedance Max. = 0.3 kΩ 0.94 - - μs High-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 0Dh 1.50 - - μs Normal-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 28h Offset error - ±0.5 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Full-scale error - ±0.75 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Table 2.42 A/D conversion characteristics (1) in high-speed A/D conversion mode (2 of 2) Conditions: VCC = AVCC0 = 4.5 to 5.5 V, VREFH0 = 4.5 to 5.5 V, VSS = AVSS0 = VREFL0 = 0V Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions

R01DS0309EU0120 Rev.1.20 Page 77 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than 14-bit A/D converter input are used. Absolute accuracy does not include quantization errors. Offset error, full-scale error, DNL differential nonlinearity error, and INL integral nonlinearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time and the comparison time. The number of sampling states is indicated for the test conditions. Note 2. Except for I/O input capacitance (Cin), see section 2.2.4, I/O VOH, VOL, and Other Characteristics. Quantization error - ±0.5 - LSB - Absolute accuracy - ±1.25 ±5.0 LSB High-precision channel ±8.0 LSB Other than above DNL differential nonlinearity error - ±1.0 - LSB - INL integral nonlinearity error - ±1.0 ±3.0 LSB - 14-bit mode Resolution - - 14 Bit - Conversion time*1 (Operation at PCLKD = 48 MHz) Permissible signal source impedance Max. = 0.3 kΩ 1.06 - - μs High-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 0Dh 1.63 - - μs Normal-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 28h Offset error - ±2.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Full-scale error - ±3.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±5.0 ±20 LSB High-precision channel ±32.0 LSB Other than above DNL differential nonlinearity error - ±4.0 - LSB - INL integral nonlinearity error - ±4.0 ±12.0 LSB - Table 2.44 A/D conversion characteristics (3) in high-speed A/D conversion mode (1 of 2) Conditions: VCC = AVCC0 = 2.4 to 5.5 V, VREFH0 = 2.4 to 5.5 V, VSS = AVSS0 = VREFL0 = 0V Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions Frequency 1 - 32 MHz - Analog input capacitance*2 Cs - - 8 (reference data) pF High-precision channel --9 (reference data) pF Normal-precision channel Analog input resistance Rs - - 2.5 (reference data) kΩ High-precision channel - - 6.7 (reference data) kΩ Normal-precision channel Analog input voltage range Ain 0 - VREFH0 V - 12-bit mode Resolution - - 12 Bit - Table 2.43 A/D conversion characteristics (2) in high-speed A/D conversion mode (2 of 2) Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VREFH0 = 2.7 to 5.5 V, VSS = AVSS0 = VREFL0 = 0V Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions

R01DS0309EU0120 Rev.1.20 Page 78 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than 14-bit A/D converter input are used. Absolute accuracy does not include quantization errors. Offset error, full-scale error, DNL differential nonlinearity error, and INL integral nonlinearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time and the comparison time. The number of sampling states is indicated for the test conditions. Note 2. Except for I/O input capacitance (Cin), see section 2.2.4, I/O VOH, VOL, and Other Characteristics. Conversion time*1 (Operation at PCLKD = 32 MHz) Permissible signal source impedance Max. = 1.3 kΩ 1.41 - - μs High-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 0Dh 2.25 - - μs Normal-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 28h Offset error - ±0.5 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Full-scale error - ±0.75 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±1.25 ±5.0 LSB High-precision channel ±8.0 LSB Other than above DNL differential nonlinearity error - ±1.0 - LSB - INL integral nonlinearity error - ±1.0 ±3.0 LSB - 14-bit mode Resolution - - 14 Bit - Conversion time* (Operation at PCLKD = 32 MHz) Permissible signal source impedance Max. = 1.3 kΩ 1.59 - - μs High-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 0Dh 2.44 - - μs Normal-precision channel ADCSR.ADHSC = 0 ADSSTRn.SST[7:0] = 28h Offset error - ±2.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Full-scale error - ±3.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±5.0 ±20 LSB High-precision channel ±32.0 LSB Other than above DNL differential nonlinearity error - ±4.0 - LSB - INL integral nonlinearity error - ±4.0 ±12.0 LSB - Table 2.45 A/D conversion characteristics (4) in low-power A/D conversion mode (1 of 2) Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VREFH0 = 2.7 to 5.5 V, VSS = AVSS0 = VREFL0 = 0V Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions Frequency 1 - 24 MHz - Analog input capacitance*2 Cs - - 8 (reference data) pF High-precision channel --9 (reference data) pF Normal-precision channel Table 2.44 A/D conversion characteristics (3) in high-speed A/D conversion mode (2 of 2) Conditions: VCC = AVCC0 = 2.4 to 5.5 V, VREFH0 = 2.4 to 5.5 V, VSS = AVSS0 = VREFL0 = 0V Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions

R01DS0309EU0120 Rev.1.20 Page 79 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than 14-bit A/D converter input are used. Absolute accuracy does not include quantization errors. Offset error, full-scale error, DNL differential nonlinearity error, and INL integral nonlinearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time and the comparison time. The number of sampling states is indicated for the test conditions. Note 2. Except for I/O input capacitance (Cin), see section 2.2.4, I/O VOH, VOL, and Other Characteristics. Analog input resistance Rs - - 2.5 (reference data) kΩ High-precision channel - - 6.7 (reference data) kΩ Normal-precision channel Analog input voltage range Ain 0 - VREFH0 V - 12-bit mode Resolution - - 12 Bit - Conversion time*1 (Operation at PCLKD = 24 MHz) Permissible signal source impedance Max. = 1.1 kΩ 2.25 - - μs High-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 0Dh 3.38 - - μs Normal-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 28h Offset error - ±0.5 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Full-scale error - ±0.75 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±1.25 ±5.0 LSB High-precision channel ±8.0 LSB Other than above DNL differential nonlinearity error - ±1.0 - LSB - INL integral nonlinearity error - ±1.0 ±3.0 LSB - 14-bit mode Resolution - - 14 Bit - Conversion time* (Operation at PCLKD = 24 MHz) Permissible signal source impedance Max. = 1.1 kΩ 2.50 - - μs High-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 0Dh 3.63 - - μs Normal-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 28h Offset error - ±2.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Full-scale error - ±3.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±5.0 ±20 LSB High-precision channel ±32.0 LSB Other than above DNL differential nonlinearity error - ±4.0 - LSB - INL integral nonlinearity error - ±4.0 ±12.0 LSB - Table 2.45 A/D conversion characteristics (4) in low-power A/D conversion mode (2 of 2) Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VREFH0 = 2.7 to 5.5 V, VSS = AVSS0 = VREFL0 = 0V Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions

R01DS0309EU0120 Rev.1.20 Page 80 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than 14-bit A/D converter input are used. Absolute Table 2.46 A/D conversion characteristics (5) in low-power A/D conversion mode Conditions: VCC = AVCC0 = 2.4 to 5.5 V, VREFH0 = 2.4 to 5.5 V, VSS = AVSS0 = VREFL0 = 0V Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions Frequency 1 - 16 MHz - Analog input capacitance*2 Cs - - 8 (reference data) pF High-precision channel --9 (reference data) pF Normal-precision channel Analog input resistance Rs - - 2.5 (reference data) kΩ High-precision channel - - 6.7 (reference data) kΩ Normal-precision channel Analog input voltage range Ain 0 - VREFH0 V - 12-bit mode Resolution - - 12 Bit - Conversion time*1 (Operation at PCLKD = 16 MHz) Permissible signal source impedance Max. = 2.2 kΩ 3.38 - - μs High-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 0Dh 5.06 - - μs Normal-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 28h Offset error - ±0.5 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Full-scale error - ±0.75 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±1.25 ±5.0 LSB High-precision channel ±8.0 LSB Other than above DNL differential nonlinearity error - ±1.0 - LSB - INL integral nonlinearity error - ±1.0 ±3.0 LSB - 14-bit mode Resolution - - 14 Bit - Conversion time* (Operation at PCLKD = 16 MHz) Permissible signal source impedance Max. = 2.2 kΩ 3.75 - - μs High-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 0Dh 5.44 - - μs Normal-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 28h Offset error - ±2.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Full-scale error - ±3.0 ±18 LSB High-precision channel ±24.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±5.0 ±20 LSB High-precision channel ±32.0 LSB Other than above DNL differential nonlinearity error - ±4.0 - LSB - INL integral nonlinearity error - ±4.0 ±12.0 LSB -

R01DS0309EU0120 Rev.1.20 Page 81 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics accuracy does not include quantization errors. Offset error, full-scale error, DNL differential nonlinearity error, and INL integral nonlinearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time and the comparison time. The number of sampling states is indicated for the test conditions. Note 2. Except for I/O input capacitance (Cin), see section 2.2.4, I/O VOH, VOL, and Other Characteristics. Table 2.47 A/D conversion characteristics (6) in low-power A/D conversion mode (1 of 2) Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions Frequency 1 - 8 MHz - Analog input capacitance*2 Cs - - 8 (reference data) pF High-precision channel --9 (reference data) pF Normal-precision channel Analog input resistance Rs - - 3.8 (reference data) kΩ High-precision channel - - 8.2 (reference data) kΩ Normal-precision channel Analog input voltage range Ain 0 - VREFH0 V - 12-bit mode Resolution - - 12 Bit - Conversion time* (Operation at PCLKD = 8 MHz) Permissible signal source impedance Max. = 5 kΩ 6.75 - - μs High-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 0Dh 10.13 - - μs Normal-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 28h Offset error - ±1.0 ±7.5 LSB High-precision channel ±10.0 LSB Other than above Full-scale error - ±1.5 ±7.5 LSB High-precision channel ±10.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±3.0 ±8.0 LSB High-precision channel ±12.0 LSB Other than above DNL differential nonlinearity error - ±1.0 - LSB - INL integral nonlinearity error - ±1.0 ±3.0 LSB - 14-bit mode Resolution - - 14 Bit - Conversion time* (Operation at PCLKD = 8 MHz) Permissible signal source impedance Max. = 5 kΩ 7.50 - - μs High-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 0Dh 10.88 - - μs Normal-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 28h Offset error - ±4.0 ±30.0 LSB High-precision channel ±40.0 LSB Other than above Full-scale error - ±6.0 ±30.0 LSB High-precision channel ±40.0 LSB Other than above Quantization error - ±0.5 - LSB -

R01DS0309EU0120 Rev.1.20 Page 82 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than 14-bit A/D converter input are used. Absolute accuracy does not include quantization errors. Offset error, full-scale error, DNL differential nonlinearity error, and INL integral nonlinearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time and the comparison time. The number of sampling states is indicated for the test conditions. Note 2. Except for I/O input capacitance (Cin), see section 2.2.4, I/O VOH, VOL, and Other Characteristics. Absolute accuracy - ±12.0 ±32.0 LSB High-precision channel ±48.0 LSB Other than above DNL differential nonlinearity error - ±4.0 - LSB - INL integral nonlinearity error - ±4.0 ±12.0 LSB - Table 2.48 A/D conversion characteristics (7) in low-power A/D conversion mode (1 of 2) Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions Frequency 1 - 4 MHz - Analog input capacitance*2 Cs - - 8 (reference data) pF High-precision channel --9 (reference data) pF Normal-precision channel Analog input resistance Rs - - 13.1 (reference data) kΩ High-precision channel - - 14.3 (reference data) kΩ Normal-precision channel Analog input voltage range Ain 0 - VREFH0 V - 12-bit mode Resolution - - 12 Bit - Conversion time* (Operation at PCLKD = 4 MHz) Permissible signal source impedance Max. = 9.9 kΩ 13.5 - - μs High-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 0Dh 20.25 - - μs Normal-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 28h Offset error - ±1.0 ±7.5 LSB High-precision channel ±10.0 LSB Other than above Full-scale error - ±1.5 ±7.5 LSB High-precision channel ±10.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±3.0 ±8.0 LSB High-precision channel ±12.0 LSB Other than above DNL differential nonlinearity error - ±1.0 - LSB - INL integral nonlinearity error - ±1.0 ±3.0 LSB - 14-bit mode Resolution - - 14 Bit - Table 2.47 A/D conversion characteristics (6) in low-power A/D conversion mode (2 of 2) Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions

R01DS0309EU0120 Rev.1.20 Page 83 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than 14-bit A/D converter input are used. Absolute accuracy does not include quantization errors. Offset error, full-scale error, DNL differential nonlinearity error, and INL integral nonlinearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time and the comparison time. The number of sampling states is indicated for the test conditions. Note 2. Except for I/O input capacitance (Cin), see section 2.2.4, I/O VOH, VOL, and Other Characteristics. Figure 2.62 Equivalent circuit for analog input Conversion time*1 (Operation at PCLKD = 4 MHz) Permissible signal source impedance Max. = 9.9 kΩ 15.0 - - μs High-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 0Dh 21.75 - - μs Normal-precision channel ADCSR.ADHSC = 1 ADSSTRn.SST[7:0] = 28h Offset error - ±4.0 ±30.0 LSB High-precision channel ±40.0 LSB Other than above Full-scale error - ±6.0 ±30.0 LSB High-precision channel ±40.0 LSB Other than above Quantization error - ±0.5 - LSB - Absolute accuracy - ±12.0 ±32.0 LSB High-precision channel ±48.0 LSB Other than above DNL differential nonlinearity error - ±4.0 - LSB - INL integral nonlinearity error - ±4.0 ±12.0 LSB - Table 2.49 14-bit A/D converter channel classification (1 of 2) Classification Channel Conditions Remarks High-precision channel AN000 to AN013 AVCC0 = 1.6 to 5.5 V Pins AN000 to AN013 cannot be used as general I/O, IRQ2 input, or for TS transmission when the A/D converter is in use. Normal-precision channel AN016 to AN022 - Internal reference voltage input channel Internal reference voltage AVCC0 = 2.0 to 5.5 V - Table 2.48 A/D conversion characteristics (7) in low-power A/D conversion mode (2 of 2) Reference voltage range applied to the VREFH0 and VREFL0. Parameter Min Typ Max Unit Test Conditions Rs Cin Rs Cin Cs ADC MCU Analog input ANn Analog input ANn Sensor

R01DS0309EU0120 Rev.1.20 Page 84 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. The internal reference voltage cannot be selected for input channels when AVCC0 < 2.0 V. Note 2. The 14-bit A/D internal reference voltage indicates the voltage when the internal reference voltage is input to the 14-bit A/D converter. Note 3. This is a parameter for ADC14 when the internal reference voltage is used as the high-potential reference voltage. Note 4. This is a parameter for ADC14 when the internal reference voltage is selected for an analog input channel in ADC14. Figure 2.63 Illustration of 14-bit A/D converter characteristic terms Temperature sensor input channel Temperature sensor output AVCC0 = 2.0 to 5.5 V - Table 2.50 A/D internal reference voltage characteristics Conditions: VCC = AVCC0 = VREFH0 = 2.0 to 5.5 V*1 Parameter Min Typ Max Unit Test conditions Internal reference voltage input channel* 1.36 1.43 1.50 V - Frequency*3 1- 2M Hz - Sampling time*4 5.0 - - μs- Table 2.49 14-bit A/D converter channel classification (2 of 2) Classification Channel Conditions Remarks Integral nonlinearity error (INL) Actual A/D conversion characteristic Ideal A/D conversion characteristic Analog input voltage Offset error Absolute accuracy Differential nonlinearity error (DNL) Full-scale error 3FFFh 0000h Ideal line of actual A/D conversion characteristic 1-LSB width for ideal A/D conversion characteristic Differential nonlinearity error (DNL) 1-LSB width for ideal A/D conversion characteristic VREFH0 (full-scale) A/D converter output code

R01DS0309EU0120 Rev.1.20 Page 85 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Absolute accuracy Absolute accuracy is the difference between output code based on the theoretical A/D conversion characteristics, and the actual A/D conversion result. When measuring absolute accuracy, the voltage at the midpoint of the width of the analog input voltage (1-LSB width), which can meet the expectation of outputting an equal code based on the theoretical A/D conversion characteristics, is used as the analog input voltage. For example, if 12-bit resolution is used and the reference voltage VREFH0 = 3.072 V , then 1-LSB width becomes 0.75 mV, and 0 mV , 0.75 mV , and 1.5 mV are used as the analog input voltages. If analog input voltage is 6 mV , an absolute accuracy of ±5 LSB means that the actual A/D conversion result is in the range of 003h to 00Dh, though an output code of 008h can be expected from the theoretical A/D conversion characteristics. Integral nonlinearity error (INL) Integral nonlinearity error is the maximum deviation between the ideal line when the measured offset and full-scale errors are zeroed, and the actual output code. Differential nonlinearity error (DNL) Differential nonlinearity error is the difference between 1-LSB width based on the ideal A/D conversion characteristics and the width of the actual output code. Offset error Offset error is the difference between the transition point of the ideal first output code and the actual first output code. Full-scale error Full-scale error is the difference between the transition point of the ideal last output code and the actual last output code.

R01DS0309EU0120 Rev.1.20 Page 86 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.6 DAC8 Characteristics

2.7 TSN Characteristics

2.8 OSC Stop Detect Characteristics

Figure 2.64 Oscillation stop detection timing Table 2.51 D/A conversion characteristics Conditions: VCC = AVCC0 = 1.8 to 5.5 V Parameter Min Typ Max Unit Test conditions Resolution - - 8 bit - Charge pump stabilization time - - 100 μs- Conversion time VCC = 2.7 to 5.5V - -3 .0 μs 35-pF capacitive loadVCC = 1.8 to 2.7V - -6 .0 μs Absolute accuracy VCC = 2.4 to 5.5V -- ±3.0 LSB 2-M Ω resistive loadVCC = 1.8 to 2.4V -- ±3.5 VCC = 2.4 to 5.5V -- ±2.0 LSB 4-M Ω resistive loadVCC = 1.8 to 2.4V -- ±2.5 RO output resistance -7 .4 -k Ω - Table 2.52 TSN characteristics Conditions: VCC = AVCC0 = 2.0 to 5.5 V Parameter Symbol Min Typ Max Unit Test conditions Relative accuracy - - ±1.5 - °C 2.4 V or above - ±2.0 - °C Below 2.4 V Temperature slope -- -3.65 - mV/°C - Output voltage (at 25°C) -- 1.05 - V VCC = 3.3 V Temperature sensor start time t START -- 5 μs- Sampling time - 5 - - μs Table 2.53 Oscillation stop detection circuit characteristics Parameter Symbol Min Typ Max Unit Test conditions Detection time tdr --1 m s Figure 2.64 tdr Main clock OSTDSR.OSTDF MOCO clock ICLK

R01DS0309EU0120 Rev.1.20 Page 87 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.9 POR and LVD Characteristics

Note 1. These characteristics apply when noise is not superimposed on the power supply. When a setting causes this voltage detection level to overlap with that of the voltage detection circuit, it cannot be specified whether LVD1 or LVD2 is used for voltage detection. Note 2. # in the symbol V det0_# denotes the value of the OFS1.VDSEL1[2:0] bits. Note 3. # in the symbol V det1_# denotes the value of the LVDLVLR.LVD1LVL[4:0] bits. Note 4. # in the symbol V det2_# denotes the value of the LVDLVLR.LVD2LVL[2:0] bits. Table 2.54 Power-on reset circuit and voltag e detection circuit characteristics (1) Parameter Symbol Min Typ Max Unit Test Conditions Voltage detection level*1 Power-on reset (POR) VPOR 1.27 1.42 1.57 V Figure 2.65, Figure 2.66 Voltage detection circuit (LVD0)* 2 Vdet0_0 3.68 3.85 4.00 V Figure 2.67 At falling edge VCCV det0_1 2.68 2.85 2.96 Vdet0_2 2.38 2.53 2.64 Vdet0_3 1.78 1.90 2.02 Vdet0_4 1.60 1.69 1.82 Voltage detection circuit (LVD1)*3 Vdet1_0 4.13 4.29 4.45 V Figure 2.68 At falling edge VCCV det1_1 3.98 4.16 4.30 Vdet1_2 3.86 4.03 4.18 Vdet1_3 3.68 3.86 4.00 Vdet1_4 2.98 3.10 3.22 Vdet1_5 2.89 3.00 3.11 Vdet1_6 2.79 2.90 3.01 Vdet1_7 2.68 2.79 2.90 Vdet1_8 2.58 2.68 2.78 Vdet1_9 2.48 2.58 2.68 Vdet1_A 2.38 2.48 2.58 Vdet1_B 2.10 2.20 2.30 Vdet1_C 1.84 1.96 2.05 Vdet1_D 1.74 1.86 1.95 Vdet1_E 1.63 1.75 1.84 Vdet1_F 1.60 1.65 1.73 Voltage detection circuit (LVD2)*4 Vdet2_0 4.11 4.31 4.48 V Figure 2.69 At falling edge VCCVdet2_1 3.97 4.17 4.34 Vdet2_2 3.83 4.03 4.20 Vdet2_3 3.64 3.84 4.01 Table 2.55 Power-on reset circuit and voltage detection circuit characteristics (2) (1 of 2) Parameter Symbol Min Typ Max Unit Test Conditions Wait time after power-on reset cancellation LVD0:enable t POR -1 . 7 -m s - LVD0:disable t POR -1 . 3 -m s - Wait time after voltage monitor 0 ,1,2 reset cancellation LVD0:enable*1 tLVD0,1,2 -0 . 6 -m s - LVD0:disable*2 tLVD1,2 -0 . 2 -m s - Response delay*3 tdet - - 350 μs Figure 2.65, Figure 2.66 Minimum VCC down time tVOFF 450 - - μs Figure 2.65, VCC = 1.0 V or above

R01DS0309EU0120 Rev.1.20 Page 90 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.69 Voltage detection circuit timing (V det2)

2.10 CTSU Characteristics

Table 2.56 CTSU characteristics Conditions: VCC = AVCC0 = 1.8 to 5.5 V Parameter Symbol Min Typ Max Unit Test conditions External capacitance connected to TSCAP pin C tscap 91 0 1 1 n F - TS pin capacitive load Cbase --5 0 p F - Permissible output high current ΣIoH - - -24 mA When the mutual capacitance method is applied tVOFF Vdet2VCC tdettdet tLVD2 Td(E-A) LVCMPCR.LVD2E LVD2 Comparator output LVD2CR0.CMPE LVD2SR.MON Internal reset signal (active-low) When LVD2CR0.RN = 0 When LVD2CR0.RN = 1 VLVH tLVD2

R01DS0309EU0120 Rev.1.20 Page 91 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.11 Comparator Characteristics

Note 1. Period from when the comparator input channel is switched until the switched result reflects in its output. Note 2. Period from when comparator operation is enabled (CPMCTL.HCMPON = 1) until the comparator satisfies the DC/AC characteristics. Note 1. In window mode, be sure to satisfy the following condition: IVREF1 - IVREF0  0.2 V.

2.12 OPAMP Characteristics

Table 2.57 ACMPHS characteristics Conditions: VCC = AVCC0 = 2.7 to 5.5 V, VSS = AVSS0 = 0 V Parameter Symbol Min Typ Max Unit Test conditions Input offset voltage VIOCMP -± 5 ± 4 0 m V - Input voltage range VICPM 0 - AVCC0 V - Output delay time Td - 50 100 ns Input amplitude ±100 mV Stabilization wait time during input channel switching*1 TWAIT 300 - - ns Input amplitude ±100 mV Operation stabilization wait time*2 Tcmp 1- - μs 3.3 V ≤ AVCC0 ≤ 5.5 V 3- - μs 2.7 V ≤ AVCC0  3.3 V Table 2.58 ACMPLP characteristics Conditions: VCC = AVCC0 = 1.8 to 5.5 V, VSS = AVSS0 = 0 V Parameter Symbol Min Typ Max Unit Test conditions Input voltage range IVREF0 VREF 0- V C C - 1.4*1 V- IVREF1 (Standard mode) 0 - VCC - 1.4 V IVREF1 (Window mode) 1.4* 1 -V C C V IVCMP0, IVCMP1 VI 0- V C C V Internal reference voltage - 1.36 1.44 1.50 V - Output delay Comparator high-speed mode (Standard mode) Td - -1 . 2 μs VCC = 3.0 Slew rate of input signal > 50 mV/μsComparator high-speed mode (Window mode) 2.0 μs Comparator low-speed mode (Standard mode) 5.0 μs Offset voltage Comparator high-speed mode (Standard mode) - --5 0 m V - Comparator high-speed mode (Window mode) 60 mV Comparator low-speed mode (Standard mode) 40 mV Operation stabilization wait time T cmp 100 - - μs- Table 2.59 OPAMP characteristics (1 of 2) Conditions: 1.8 V ≤ AVCC0 = VCC ≤ 5.5 V, VSS = AVSS0 = 0 V Parameter Symbol Conditions Min Typ Max Unit Common mode input range V icm1 Low-power mode 0.1 - AVCC0 - 0.5 V Vicm2 High-speed mode 0.2 - AVCC0 - 0.6 Output voltage range V o1 Low-power mode 0.1 - AVCC0 - 0.1 V Vo2 High-speed mode 0.1 - AVCC0 - 0.1 Input offset voltage Vioff1 Low-power mode -7 - 7 mV Vioff2 High-speed mode -5 - 5

R01DS0309EU0120 Rev.1.20 Page 92 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. When the operational amplifier and the reference current circuit have already been activated. Open gain AV -8 0 120 - dB Gain-bandwidth (GB) product GBW1 Low-power mode - 0.012 - MHz GBW2 High-speed mode - 1.7 - Phase margin PM CL = 20 pF 50 - - deg Gain margin GM CL = 20 pF 10 - - dB Equivalent input noise V noise1 f = 10 Hz Low-power mode - 700 - nV/ √HzVnoise2 f = 1 kHz - 400 - Vnoise3 f = 1 kHz High-speed mode - 90 - Vnoise4 f = 100 kHz - 50 - Power supply reduction ratio PSRR - - 90 - dB Common mode signal reduction ratio CMRR - - 90 - dB Stabilization wait time T std1 CL = 20 pF Only operational amplifier is activated.* Low-power mode VCC  3.6V 1800 - - μs Low-power mode VCC  5.5V 2500 - - Tstd2 High-speed mode 13 - - Tstd3 CL = 20 pF Operational amplifier and reference current circuit are activated simultaneously. Low-power mode VCC  3.6V 1800 - - Low-power mode VCC  5.5V 2500 - - Tstd4 High-speed mode 13 - - Settling time Tset1 CL = 20 pF Low-power mode VCC  3.6V - - 1400 μs Low-power mode VCC  5.5V - - 2000 μs Tset2 High-speed mode - - 13 μs Slew rate Tslew1 CL = 20 pF Low-power mode - 0.005 - V/μs Tslew2 High-speed mode - 1.1 - V/μs Load current Iload1 Low-power mode -100 - 100 μA Iload2 High-speed mode -100 - 100 Load capacitance CL - - - 20 pF Table 2.59 OPAMP characteristics (2 of 2) Conditions: 1.8 V ≤ AVCC0 = VCC ≤ 5.5 V, VSS = AVSS0 = 0 V Parameter Symbol Conditions Min Typ Max Unit

R01DS0309EU0120 Rev.1.20 Page 93 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics

2.13 Flash Memory Characteristics

2.13.1 Code Flash Memory Characteristics

Note 1. The reprogram/erase cycle is th e number of erasures for each block. When the reprogram/erase cycle is n times (n = 1,000), erasing can be performed n times for each block. For instance, when 4-byte programming is performed 256 times for different addresses in 1-KB blocks, and then the entire block is erased, the reprogram/ erase cycle is counted as one. However, programming the same address for several times as one erasure is not enabled. (overwriting is prohibited.) Note 2. Characteristic when using the flash memory progra mmer and the self-programming library provided by Renesas Electronics. Note 3. This result is obtained from reliability testing. Note 1. Does not include the time until each operation of the flash memory is started after instructions are executed by the software. Note 2. The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 3. The frequency accuracy of ICLK must be ±3.5% duri ng programming or erasing the flash memory. Confirm the frequency accuracy of the clock source. Table 2.60 Code flash characteristics (1) Parameter Symbol Min Typ Max Unit Conditions Reprogramming/erasure cycle*1 NPEC 1000 -- Times - Data hold time After 1000 times N PEC tDRP 20*2, *3 -- Year T a = +85°C Table 2.61 Code flash characteristics (2) High-speed operating mode Conditions: VCC = AVCC0 = 2.7 to 5.5 V Parameter Symbol ICLK = 1 MHz ICLK = 32 MHz UnitMin Typ Max Min Typ Max Programming time 4 bytes t P4 - 116 998 - 54 506 μs Erasure time 1 KB t E1K - 9.03 287 - 5.67 222 ms Blank check time 4 bytes t BC4 -- 56.8 -- 16.6 μs

1 KB t BC1K -- 1899 -- 140 μs

Erase suspended time tSED -- 22.5 -- 10.7 μs Startup area switching setting time t SAS - 21.9 585 - 12.1 447 ms Access window time t AWS - 21.9 585 - 12.1 447 ms OCD/serial programmer ID setting time t OSIS - 21.9 585 - 12.1 447 ms Flash memory mode transition wait time 1 tDIS 2 -- 2 -- μs Flash memory mode transition wait time 2 t MS 5 -- 5 -- μs

R01DS0309EU0120 Rev.1.20 Page 94 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. Does not include the time until each operation of the flash memory is started after instructions are executed by the software. Note 2. The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 3. The frequency accuracy of ICLK must be ±3.5% duri ng programming or erasing the flash memory. Confirm the frequency accuracy of the clock source.

2.13.2 Data Flash Memory Characteristics

Note 1. The reprogram/erase cycle is the number of erasure for each block. When the reprogram/erase cycle is n times (n = 100,000), erasing can be performed n times for each block. For instance, when 1-byte programming is performed 1,000 times for different addresses in 1-byte blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasure is not enabled. (overwriting is prohibited.) Note 2. Characteristics when using the flash memory programmer and the self-programming library provided by Renesas Electronics. Note 3. These results are obtained from reliability testing. Table 2.62 Code flash characteristics (3) Middle-speed operating mode Conditions: VCC = AVCC0 = 1.8 to 5.5 V, Ta = -40 to +85°C Parameter Symbol ICLK = 1 MHz ICLK = 8 MHz UnitMin Typ Max Min Typ Max Programming time 4 bytes t P4 - 157 1411 - 101 966 μs Erasure time 1 KB t E1K - 9.10 289 - 6.10 228 ms Blank check time 2 bytes t BC4 -- 87.7 -- 52.5 μs

1 KB t BC1K -- 1930 -- 414 μs

Erase suspended time tSED -- 32.7 -- 21.6 μs Startup area switching setting time t SAS - 22.8 592 - 14.2 465 ms Access window time tAWS - 22.8 592 - 14.2 465 ms OCD/serial programmer ID setting time t OSIS - 22.8 592 - 14.2 465 ms Flash memory mode transition wait time 1 t DIS 2 -- 2 -- μs Flash memory mode transition wait time 2 t MS 720 -- 720 -- ns Table 2.63 Data flash characteristics (1) Parameter Symbol Min Typ Max Unit Conditions Reprogramming/erasure cycle*1 NDPEC 100000 1000000 - Times - Data hold time After 10000 times of N DPEC tDDRP 20*2, *3 -- Year Ta = +85°C After 100000 times of NDPEC 5*2, *3 -- Year After 1000000 times of NDPEC -1 * 2, *3 - Year Ta = +25°C

R01DS0309EU0120 Rev.1.20 Page 95 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Note 1. Does not include the time until each operation of the flash memory is started after instructions are executed by the software. Note 2. The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 3. The frequency accuracy of ICLK must be ±3.5% duri ng programming or erasing the flash memory. Confirm the frequency accuracy of the clock source. Note 1. Does not include the time until each operation of the flash memory is started after instructions are executed by the software. Note 2. The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 3. The frequency accuracy of ICLK must be ±3.5% duri ng programming or erasing the flash memory. Confirm the frequency accuracy of the clock source.

2.13.3 Serial Wire Debug (SWD)

Table 2.64 Data flash characteristics (2) High-speed operating mode Conditions: VCC = AVCC0 = 2.7 to 5.5 V Parameter Symbol ICLK = 4 MHz ICLK = 32 MHz UnitMin Typ Max Min Typ Max Programming time 1-byte t DP1 - 52.4 463 - 42.1 387 μs Erasure time 1-KB t DE1K - 8.98 286 - 6.42 237 ms Blank check time 1-byte t DBC1 -- 24.3 -- 16.6 μs 1-KB t DBC1K -- 1872 -- 512 μs Suspended time during erasing t DSED -- 13.0 -- 10.7 μs Data flash STOP recovery time t DSTOP 5 - -5 - - μs Table 2.65 Data flash characteristics (3) Middle-speed operating mode Conditions: VCC = AVCC0 = 1.8 to 5.5 V, Ta = -40 to +85°C Parameter Symbol ICLK = 4 MHz ICLK = 8 MHz UnitMin Typ Max Min Typ Max Programming time 1-byte t DP1 - 94.7 886 - 89.3 849 μs Erasure time 1-KB t DE1K - 9.59 299 - 8.29 273 ms Blank check time 1-byte t DBC1 -- 56.2 -- 52.5 μs 1-KB t DBC1K -- 2.17 -- 1.51 ms Suspended time during erasing t DSED -- 23.0 -- 21.7 μs Data flash STOP recovery time t DSTOP 720 - -7 2 0 - -n s Table 2.66 SWD characteristics (1) (1 of 2) Conditions: VCC = AVCC0 = 2.4 to 5.5 V Parameter Symbol Min Typ Max Unit Test conditions SWCLK clock cycle time tSWCKcyc 80 --n s Figure 2.70 SWCLK clock high pulse width t SWCKH 35 --n s SWCLK clock low pulse width t SWCKL 35 --n s SWCLK clock rise time tSWCKr -- 5 n s SWCLK clock fall time t SWCKf -- 5 n s

R01DS0309EU0120 Rev.1.20 Page 96 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.70 SWD SWCLK timing SWDIO setup time tSWDS 16 --n s Figure 2.71 SWDIO hold time tSWDH 16 --n s SWDIO data delay time tSWDD 2 - 70 ns Table 2.67 SWD characteristics (2) Conditions: VCC = AVCC0 = 1.6 to 2.4 V Parameter Symbol Min Typ Max Unit Test conditions SWCLK clock cycle time tSWCKcyc 250 - - ns Figure 2.70 SWCLK clock high pulse width t SWCKH 120 - - ns SWCLK clock low pulse width t SWCKL 120 - - ns SWCLK clock rise time tSWCKr -- 5 n s SWCLK clock fall time tSWCKf -- 5 n s SWDIO setup time t SWDS 50 --n s Figure 2.71 SWDIO hold time tSWDH 50 --n s SWDIO data delay time tSWDD 2 - 150 ns Table 2.66 SWD characteristics (1) (2 of 2) Conditions: VCC = AVCC0 = 2.4 to 5.5 V Parameter Symbol Min Typ Max Unit Test conditions tSWCKH tSWCKf tSWCKcyc SWCLK tSWCKr tSWCKL

R01DS0309EU0120 Rev.1.20 Page 97 of 108 Oct 31, 2024 S128 Datasheet 2. Electrical Characteristics Figure 2.71 SWD input/output timing tSWDS SWCLK tSWDH SWDIO (Input) tSWDD SWDIO (Output) tSWDD SWDIO (Output) tSWDD SWDIO (Output)

R01DS0309EU0120 Rev.1.20 Page 98 of 108 Oct 31, 2024 S128 Datasheet Appendix 1. Package Dimensions Appendix 1.Package Dimensions Information on the latest version of the package dimensions or mountings is displayed in “Packages” on the Renesas Electronics Corporation website. Figure 1.1 LQFP 64-pin MASS (Typ) [g] 0.3 Unit: mm Previous CodeRENESAS Code PLQP0064KB-C — P-LFQFP64-10x10-0.50 © 2015 Renesas Electronics Corporation. All rights reserved. D E HD HE A bp c T e x y Lp 9.9 9.9 11.8 11.8 0.05 0.15 0.09 0.45 Min Nom Dimensions in millimetersReference Symbol Max 10.0 10.0 1.4 12.0 12.0 0.20 3.5q 0.5 0.6 1.0 10.1 10.1 12.2 12.2 1.7 0.15 0.27 0.20 0.08 0.08 0.75 NOTE) 1. DIMENSIONS “*1” AND “*2” DO NOT INCLUDE MOLD FLASH. 2. DIMENSION “*3” DOES NOT INCLUDE TRIM OFFSET. 3. PIN 1 VISUAL INDEX FEATURE MAY VARY, BUT MUST BE LOCATED WITHIN THE HATCHED AREA. 4. CHAMFERS AT CORNERS ARE OPTIONAL, SIZE MAY VARY. HD A2A1 Lp Detail F A c 0.25 D 48 33 3249 161 F NOTE 4 NOTE 3 Index area HE E*2 bpe yS S M T

R01DS0309EU0120 Rev.1.20 Page 99 of 108 Oct 31, 2024 S128 Datasheet Appendix 1. Package Dimensions Figure 1.2 LQFP 48-pin MASS (Typ) [g] 0.2 Unit: mm Previous CodeRENESAS Code PLQP0048KB-B — P-LFQFP48-7x7-0.50 © 2015 Renesas Electronics Corporation. All rights reserved. D E HD HE A bp c T e x y Lp 6.9 6.9 8.8 8.8 0.05 0.17 0.09 0.45 Min Nom Dimensions in millimetersReference Symbol Max 7.0 7.0 1.4 9.0 9.0 0.20 3.5q 0.5 0.6 1.0 7.1 7.1 9.2 9.2 1.7 0.15 0.27 0.20 0.08 0.08 0.75 NOTE) 1. DIMENSIONS “*1” AND “*2” DO NOT INCLUDE MOLD FLASH. 2. DIMENSION “*3” DOES NOT INCLUDE TRIM OFFSET. 3. PIN 1 VISUAL INDEX FEATURE MAY VARY, BUT MUST BE LOCATED WITHIN THE HATCHED AREA. 4. CHAMFERS AT CORNERS ARE OPTIONAL, SIZE MAY VARY. HD A2A1 Lp Detail F A c 0.25 HE D E 36 25 25 11 2 F NOTE 4 NOTE 3 Index area bpe yS S M T

R01DS0309EU0120 Rev.1.20 Page 100 of 108 Oct 31, 2024 S128 Datasheet Appendix 1. Package Dimensions Figure 1.3 LQFP 32-pin NOTE) DO NOT INCLUDE MOLD FLASH. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Index mark F 24 17 x bpe HE E D HD ZD ZE Detail F L A c A2A1 Previous CodeJEITA Package Code RENESAS Code PLQP0032GB-A 32P6U-A MASS[Typ.] 0.2gP-LQFP32-7x7-0.80 1.0 0.125 0.35 0.7 0.7 0.20 0.200.1450.09 0.42 0.37 0.32 Max Nom Min Dimension in Millimeters Symbol Reference 7.1 7.0 6.9D 7.1 7.0 6.9E 1.4A2 9.2 9.0 8.8 9.2 9.0 8.8 1.7A 0.2 0.10 0.7 0.5 0.3L x 8°0° c 0.8e 0.10y HD HE bp ZD ZE Terminal cross section bp c y S S

R01DS0309EU0120 Rev.1.20 Page 101 of 108 Oct 31, 2024 S128 Datasheet Appendix 1. Package Dimensions Figure 1.4 LGA 36-pin P-WFLGA36-4x4-0.50 PWLG0036KA-A P36FC-50-AA4-2 0.023 ITEM DIMENSIONS D E w e A b x y ZD ZE 4.00 ±0.10 4.00 ±0.10 0.05 0.20 0.69 ±0.07 0.08 0.50 0.24 ±0.05 (UNIT:mm) 0.20 0.75 0.75 S y1 S A Sy S x32x b A BM e SwB ZD ZE INDEX MARK B C A SwAD E E EF DC B A C DDETAIL DETAIL EDETAIL b 0.34±0.05 0.55 0.70 ±0.05 0.55±0.05 0.70±0.05 0.55±0.05 0.75 φ φ 0.75 0.55 0.55 R0.275±0.05 R0.35±0.05 0.75 0.55±0.05 0.70± 0.05 0.55 0.75 0.55±0.05 0.70±0.05 (LAND PAD) (APERTURE OF SOLDER RESIST) D 2.90 2.90 2012 Renesas Electronics Corporation. All rights reserved.

R01DS0309EU0120 Rev.1.20 Page 102 of 108 Oct 31, 2024 S128 Datasheet Appendix 1. Package Dimensions Figure 1.5 QFN 48-pin (1) 2013 Renesas Electronics Corporation. All rights reserved. Sy e Lp S xbA B M A D E A S B A D E DETAIL OF A PART EXPOSED DIE PAD P-HWQFN48-7x7-0.50 PWQN0048KB-A 48PJN-A 0.13 121 2437 INDEX AREA D A Lp 0.20 5.50 0.40 7.00 7.00 5.50 Referance Symbol Min Nom Max Dimension in Millimeters 0.30 0.30 0.50 b 0.18 x A 0.80 y 0.05 0.00 0.25 e Z Z c D E D E E 0.50 0.05 0.75 0.75 0.15 0.25 A1 c 2 7.056.95 7.056.95 Z Z D E 2536 P48K8-50-5B4-6

R01DS0309EU0120 Rev.1.20 Page 103 of 108 Oct 31, 2024 S128 Datasheet Appendix 1. Package Dimensions Figure 1.6 QFN 48-pin (2) INDEX AREA (D/2 X E/2) D SEATING PLANE ccc C bbb C A B ddd C e b(48X) L(48X) K(48X) C aaa C B aaa C (A3) A1A eee C fff C A B fff C A B A EXPOSED DIE PAD 11 2 2536 E 48X 36 25 121 37 24 Reference Symbol Dimension in Millimeters Min. Nom. Max. A 䠉䠉 0.80 A1 0.00 0.02 0.05 A3 0.203 REF. b 0.20 0.25 0.30 D 7.00 BSC E 7.00 BSC e 0.50 BSC L 0 . 3 00 . 4 00 . 5 0 K 0.20 䠉䠉 D2 5.25 5.30 5.35 E2 5.25 5.30 5.35 aaa 0.15 bbb 0.10 ccc 0.10 ddd 0.05 eee 0.08 fff 0.10 P-HWQFN048-7x7-0.50 PWQN0048KC-A 0.13 g

R01DS0309EU0120 Rev.1.20 Page 104 of 108 Oct 31, 2024 S128 Datasheet Appendix 1. Package Dimensions Figure 1.7 QFN 32-pin (1) Sy e Lp Sb B A A x M D E A S B A D E EXPOSED DIE PAD DETAIL OF A PART PWQN0032KB-AP-HWQFN32-5x5-0.50 P32K8-50-3B4-5 0.06 1625 INDEX AREA D A Lp 0.20 3.50 0.40 5.00 5.00 3.50 Symbol Referance Min Nom Max Dimension in Millimeters 0.30 0.30 0.50 b 0.18 x A 0.80 y 0.05 0.00 0.25 e Z Z c D E D E E 0.50 0.05 0.75 0.75 0.15 0.25 A1 C2 5.054.95 5.054.95 Z Z D E 1724

R01DS0309EU0120 Rev.1.20 Page 105 of 108 Oct 31, 2024 S128 Datasheet Appendix 1. Package Dimensions Figure 1.8 QFN 32-pin (2) INDEX AREA (D/2 X E/2) D E SEATING PLANE ccc C 32X bbb C A B ddd C e b(32X) 1724 L(32X) K(32X) C aaa C B aaa C (A3) A1A eee C fff C A B A 24 17 EXPOSED DIE PAD Reference Symbol Dimension in Millimeters Min. Nom. Max. A 䠉䠉 0.80 A1 0.00 0.02 0.05 A3 0.203 REF. b 0.18 0.25 0.30 D 5.00 BSC E 5.00 BSC e 0.50 BSC L 0 . 3 50 . 4 00 . 4 5 K 0.20 䠉䠉 D2 3.45 3.50 3.55 E2 3.45 3.50 3.55 aaa 0.15 bbb 0.10 ccc 0.10 ddd 0.05 eee 0.08 fff 0.10 P-HWQFN032-5x5-0.50 PWQN0032KF-A 0.06

R01DS0309EU0120 Rev.1.20 Page 106 of 108 Oct 31, 2024 S128 Datasheet Revision History Website and Support Visit the following vanity URLs to learn about key element s of the Synergy Platform, download components and related documentation, and get support. Proprietary Notice All text, graphics, photographs, trademarks, logos, artwork and computer code, collectively known as content, contained in this document is owned, controlled or licensed by or to Renesas, and is protected by trade dress, copyright, patent and trademark laws, and other intellectual property rights and unfair competition laws. Except as expressly provided herein, no part of this document or content may be copied, reproduced, republished, posted, publicly displayed, encoded, translated, transmitted or distributed in any other medium for publication or distribution or for any commercial enterprise, without prior written consent from Renesas. Arm® and Cortex® are registered trademarks of Arm Limited. CoreSight™ is a trademark of Arm Limited. CoreMark® is a registered trademark of the Embedded Microprocessor Benchmark Consortium. Magic Packet™ is a trademark of Advanced Micro Devices, Inc. SuperFlash ® is a registered trademark of Silicon Storage Technology, Inc. in several countries including the United States and Japan. Other brands and names mentioned in this document may be the trademarks or registered trademarks of their respective holders. Revision History S128 Microcontroller Group Datasheet Rev. Date Description

1.00 Mar 10, 2017 First release

1.10 Nov 28, 2018 Updated for 1.10 1.20 Oct 31, 2024 Updated for 1.20 Synergy Software renesassynergy.com/software Synergy Software Package renesassynergy.com/ssp Software add-ons renesassynergy.com/addons Software glossary renesassynergy.com/softwareglossary Development tools renesassynergy.com/tools Synergy Hardware renesassynergy.com/hardware Microcontrollers renesassynergy.com/mcus MCU glossary renesassynergy.com/mcuglossary Parametric search renesassynergy.com/parametric Kits renesassynergy.com/kits Synergy Solutions Gallery renesassynergy.com/solutionsgallery Partner projects renesassynergy.com/partnerprojects Application projects renesassynergy.com/applicationprojects Self-service support resources: Documentation renesassynergy.com/docs Knowledgebase renesassynergy.com/knowledgebase Forums renesassynergy.com/forum Training renesassynergy.com/training Videos renesassynergy.com/videos Chat and web ticket renesassynergy.com/support

REVISION HISTORY

1. Precaution against Electrostatic Discharge (ESD) A strong electrical field, when exposed to a CMOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop the generation of static electricity as much as possible, and quickly dissipate it when it occurs. Environmental control must be adequate. When it is dry, a humidifier should be used. This is recommended to avoid using insulators that can easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors must be grounded. The operator must also be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions must be taken for printed circuit boards with mounted semiconductor devices. 2. Processing at power-on The state of the product is undefined at the time when power is supplied. The states of internal circuits in the LSI are indeterminate and the states of register settings and pins are undefined at the time when power is supplied. In a finished product where the reset signal is applied to the external reset pin, the states of pins are not guaranteed from the time when power is supplied until the reset process is completed. In a similar way, the states of pins in a product that is reset by an on-chip power-on reset function are not guaranteed from the time when power is supplied until the power reaches the level at which resetting is specified. 3. Input of signal during power-off state Do not input signals or an I/O pull-up power supply while the device is powered off. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Follow the guideline for input signal during power-off state as described in your product documentation. 4. Handling of unused pins Handle unused pins in accordance with the directions given under handling of unused pins in the manual. The input pins of CMOS products are generally in the high-impedance state. In operation with an unused pin in the open-circuit state, extra electromagnetic noise is induced in the vicinity of the LSI, an associated shoot-through current flows internally, and malfunctions occur due to the false recognition of the pin state as an input signal become possible. 5. Clock signals After applying a reset, only release the reset line after the operating clock signal becomes stable. When switching the clock signal during program execution, wait until the target clock signal is stabilized. When the clock signal is generated with an external resonator or from an external oscillator during a reset, ensure that the reset line is only released after full stabilization of the clock signal. Additionally, when switching to a clock signal produced with an external resonator or by an external oscillator while program execution is in progress, wait until the target clock signal is stable. 6. V oltage application waveform at input pin Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between V IL (Max.) and VIH (Min.) due to noise, for example, the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (Max.) and VIH (Min.). 7. Prohibition of access to reserved addresses Access to reserved addresses is prohibited. The reserved addresses are provided for possible future expansion of functions. Do not access these addresses as the correct operation of the LSI is not guaranteed. 8. Differences between products Before changing from one product to another, for example to a product with a different part number, confirm that the change will not lead to problems. The characteristics of a microprocessing unit or microcontroller unit products in the same group but having a different part number might differ in terms of internal memory capacity, layout pattern, and other factors, which can affect the ranges of electrical characteristics, such as characteristic values, operating margins, immunity to noise, and amount of radiated noise. When changing to a product with a different part number, implement a system-evaluation test for the given product.

© 202 Renesas Electronics Corporation. All rights reserved. Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operati on of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights, or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical in formation described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples. 3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rig hts of Renesas Electronics or others. 4. You shall be responsible for determining what licenses are required from any third parties, and obtaining such licenses for t he lawful import, export, manufacture, sales, utilization, distribution or other disposal of any products incorporating Renesas Electronics products, if required. 5. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by you or third parties arising from such alteration, modification, copying or reverse engineering. 6. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The intended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; h ome electronic appliances; machine tools; personal electronic equipment; industrial robots; etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale commu nication equipment; key financial terminal systems; safety control equipment; etc. Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data she et or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electr onics product that is inconsistent with any Renesas Electronics data sheet, user’s manual or other Renesas Electronics document. 7. No semiconductor product is absolutely secure. Notwithstanding any security measures or features that may be implemented in R enesas Electronics hardware or software products, Renesas Electronics shall have absolutely no liability arising out of any vulnerability or security breach, including but not limited to any unauthorized access to or use of a Renesas Electronics product or a system that uses a Renesas Electronics produ ct. RENESAS ELECTRONICS DOES NOT WARRANT OR GUARANTEE THAT RENESAS ELECTRONICS PRODUCTS, OR ANY SYSTEMS CREATED USING RENESAS ELECTRONICS PRODUCTS WILL BE INVULNERABLE OR FREE FROM CORRUPTION, ATTACK, VIRUSES, INTERFERENCE, HACKING, DATA LOSS OR THEFT, OR OTHER SECURITY INTRUSION (“Vulnerability Issues”). RENESAS ELECTRONICS DISCLAIMS ANY AND ALL RESPONSIBILITY OR LIABILITY ARISING FROM OR RELATED TO ANY VULNERABILITY ISSUES. FURTHERMORE, TO THE EXTENT PERMITTED BY APPLICABLE LAW, RENESAS ELECTRONICS DISCLAIMS ANY AND ALL WARRANTIES, EXPRESS OR IMPLIED, WITH RESPECT TO THIS DOCUMENT AND ANY RELATED OR ACCOMPANYING SOFTWARE OR HARDWARE, INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF MERCHANTABILITY , OR FITNESS FOR A PARTICULAR PURPOSE. 8. When using Renesas Electronics products, refer to the latest product information (data sheets, user’s manuals, application no tes, “General Notes for Handling and Using Semiconductor Devices” in the reliability handbook, etc.), and ensure that usage conditions are within the r anges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electro nics products outside of such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless desi gnated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics pr oducts, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and imp ractical, you are responsible for evaluating the safety of the final products or systems manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatib ility of each Renesas Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in complianc e with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a resul t of your noncompliance with applicable laws and regulations. 11. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manuf acture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions. 12. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, di sposes of, or otherwise sells or transfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document. 13. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written conse nt of Renesas Electronics. 14. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this docu ment or Renesas Electronics products. (Note1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or i ndirectly controlled subsidiaries. (Note2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. (Rev.5.0-1 October 2020) Corporate Headquarters Contact Information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners.