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GaN Hybrid Power Amplifier RTH343610X Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 4 Version 0.1 Product Features Applications

  • GaN on SiC Chip on Board
  • Surface Mount Hybrid Type
  • Fully Matched 2-Staged Doherty GaN
  • 5G Massive MIMO
  • R F Sub -Systems
  • Base Station
  • RRH
  • Small cell

Description

Accommodating the future of 5G Massive MIMO , RFHIC introduces RTH343610X amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 42 %, and powers 10W over the frequency range from 34 00MHz to 3600MHz. Integrated with Asymmetrical Doherty configurations, RTH X-Series is packaged in a very small form -factor 15.8 x 1 0.8 x 4.2mm on AIN (aluminum nitride) board which provides excellent thermal dissipation. Electrical Specifications @ Vds =35V, Ta=25℃ PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 3400 - 3600 ZS = ZL = 50 ohm Power Gain dB - 28.5 - Pout @ Average Power Gain Flatness -2 - +2 Input Return Loss - - -7 Pout @ Average dBm - 40 - Pout @ Psat dBm 47.5 48 - Pulse Width=20us, Duty10% ACLR @ LTE 1FA BW 20MHz(PAPR 7.5dB) C.F ± 18.015MHz dBc - -25 - Non DPD Drain Efficiency % - 42 - Pout @ Average Total Ids mA - 680 - Supply Voltage V -3.5 - -2 Vgd/Vgc -5 - -4 Vgp - 35 - Vds Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on: Turn on the Gate voltage supply and last turn on the Drain voltage supplies Turn off :Turn off the Drain voltage and last turn off the Gate voltage Note 1. ACLR Measured Pout=40dBm @ fc± 20MHz / 18.015MHz LTE 20MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF Package Type : SP-5A

GaN Hybrid Power Amplifier RTH343610X Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 4 Version 0.1 Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2.0 - Dimension mm 15.8 x10.8 x 4.2 - Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -8 ~ -2 Vgd Vgc Vgp Drain-Source Voltage V 50 Vds Gate Current mA

1.2 Drive

4 Carrier

7 Peaking

Operating Junction Temperature °C 225 TJ Operating Case Temperature °C -30 ~ 85 TC Storage Temperature °C -40 ~ 100 TSTG Operating Voltages PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V 34.5 35 35.5 Vds Gate Voltage (on-stage) V - Vgd @Drive Idq -2 Vgd Gate Voltage (on-stage) V - Vgc @Carrier Idq -2 Vgc Gate Voltage (on-stage) V - Vgp -2 Vgp Gate Voltage (off-stage) V - -8 - Vgd Gate Voltage (off-stage) V - -8 - Vgc Gate Voltage (off-stage) V - -8 - Vgp Block Diagram

GaN Hybrid Power Amplifier RTH343610X Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 4 Version 0.1 Package Dimensions (Type : Type: SP-5A) * Unit: mm[inch] | Tolerance: ±0.15[.008] ▲ Top View ▲ S ide View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function

1 Vgd 3 GND 6 RF Output 8 Vds (Peaking)

2 RF Input 4 Vgc 7 GND 9 Vgp

  • - 5 Vds (Carrier) - - 10 Vds (Drive) Recommended Pattern Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.

GaN Hybrid Power Amplifier RTH343610X Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 4 Version 0.1

Revision History

RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at +1- 919-677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036 or Korean Domestic Sales Team 82-31-8069-3034. Part Number Release Date Version Modification Data Sheet Status RTH343610X 2019.01.31 0.1 Newly Created Preliminary