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Technical content

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 8 Version 0.1 Product Features Applications

  • 910 ~ 920MHz (ISM band)
  • 160W CW Peak Power @ 50V
  • 82% Drain Efficiency @ 50V
  • Excellent Ruggedness
  • Excellent Thermal Stability
  • Internally Matched
  • Industrial Heating and Drying
  • Scientific
  • Medical : Skin Treatment, Blood Therapy
  • Plasma Generator

Description

The 150W CW RF Power Transistor is designed for Industrial, Scientific, Medical (ISM) and Plasma Generator applications at 915MHz. This device is suitable for use in CW, pulse and linear applications. This high efficiency rugged device is targeted to replace Industrial magnetrons and other vacuum tubes currently powering industrial heating, drying, plasma lighting and medical systems. Typical CW Peak Power Performance ( VDS=+50V , Tc=25°C, 50Ω) Frequency [MHz] Signal Type Pin [W] Power Gain [dB] Drain Efficiency [%] Pout [W] 910 CW 2.8 17.8 82.72 170 915 2.8 17.6 83.11 167.8 920 2.7 17.7 82.79 163.3 Absolute Maximum Ratings Rating Symbol Value Unit Condition Drain to Source Voltage VDSS 150 V Tc=25℃ Gate to Source Voltage VGS -10, +2 V Tc=25℃ Operating Voltage VDD 52 VDC - Maximum Forward Gate Current IGMAX 24 mA Tc=25℃ Maximum Drain Current*1 IDMAX 9 A Tc=25℃ Power Dissipation PDISS 90.5 W Tc=85℃ Storage Temperature TSTG -65, +150 ℃ - Case Operating Temperature TC -40, +150 ℃ - Operating Junction Temperature*2 TJ 225 ℃ - Soldering Temperature*3 TS 245 ℃ - Note *1 Current Limit for long term, reliable operation. *2 Continuous use at maximum temperature will affect MTTF. *3 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device" Thermal Characteristics Rating Symbol Value Unit Condition Thermal Resistance, Junction to Case RθJC 1.54 *1 ℃/W Tc=85℃ Note *1 Measured for the IE09150PC at dissipation power is 90.5W

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 8 Version 0.1 Electrical Characteristics (Tc=25℃ unless otherwise noted) Characteristics Conditions Symbol Min Typ Max Unit DC Characteristics*1 Gate Threshold Voltage V DS = 10V VGS(TH) -3.8 -3.0 -2.3 VDC ID = 21.6mA Gate Quiescent Voltage V DS = 50V VGS(Q) - -3.2 - VDC ID = 50mA Saturated Drain Current*2 V DS = 6V IDS 18.0 21.6 - A V GS = 2V Drain-Source Breakdown Voltage V GS = -8V VBR 150 - - V ID = 21.6mA Gate Leakage Current V GS = -8V IGLKG -4.8 - - mA V DS = 120V Drain Leakage Current V GS = -8V IDLKG - - 8.6 mA V DS = 120V RF Characteristics (Fc = 915MHz unless otherwise noted) Saturated Output Power*3 V DS = 50V PSAT 150 160 - W IDQ = 50mA CW Drain Efficiency*3 V DS = 50V η 79 82 - % IDQ = 50mA POUT = PSAT CW Note *1 Measured on wafer prior to packaging. *2 Scaled from PCM data. *3 CW(Continuous Wave) signal operation condition.

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 8 Version 0.1 Typical CW Performance Charts * Bias condition (I DQ=50mA @ VDS=50V, Tc=25℃) Peak Power, Drain Efficiency vs. Frequency Power Gain, Drain Efficiency vs. Frequency

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 8 Version 0.1 Power Gain, Drain Efficiency vs. Output Power

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 8 Version 0.1 Application Circuit Part List Part Description Part Number Manufacturer L1 18nH Chip Inductor LL1608-FSL18NJ TOKO R1 10 Ohm Chip Resistor, 2012 MCR10EZHJ100 ROHM C1 100pF High Q Capacitor 201 CHA 101 JSLE TEMEX C2 6.8pF High Q Capacitor 201 CHA 6R8 CSLE TEMEX C3 2.7 pF High Q Capacitor 201 CHA 2R7 CSLE TEMEX C4, C12 100pF High Q Capacitor 501 CHB 101 JSLE TEMEX C5 2.7pF High Q Capacitor 501 CHB 2R7 CSLE TEMEX C6 0.9 pF High Q Capacitor 501 CHB 0R9 BSLE TEMEX C7 5.6 pF High Q Capacitor 501 CHB 5R6 CSLE TEMEX C8 100pF Chip Capacitor GRM1885C1H101JA01D MURATA C9 1nF Chip Capacitor GRM188R71H102KA01D MURATA C10 100nF Chip Capacitor GRM188R71H104KA93D MURATA C11 10uF, 16V MLCC C3216X7R1C106K TDK C13 10uF, 100V MLCC CKG57NX7R2A106MT TDK Q1 33uF Aluminum Capacitor BDS100VC33MJ10TP SAMYOUNG Q2 EMI FILTER CTH32R102S20A-TM MARUWA Q3 DC Connector 22-04-1101 MOLEX TR1 150W GaN Transistor IE09150PC RFHIC

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 8 Version 0.1 * Unit: mm[inch] | Tolerance ±0.15 [.006] Pin Description Dim. INCH MILLIMETER Pin No Function MIN TYP MAX MIN TYP MAX L1 - - - - - - L2 - - - - - -

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 7 / 8 Version 0.1 Sealing Epoxy Tolerance (Type : NS-DS01) Note Unit : mm F is maximum size of flange

GaN Power Transistors IE09150PC Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 8 / 8 Version 0.1

Revision History

Part Number Release Date Version Description Data Sheet Status IE09150PC Aug, 2017 0.1 Initial Release of DataSheet Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sa les, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036.