RTH23007-10 RFHIC | Alldatasheet

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Technical content

GaN Doherty Hybrid Amplifier RTH23007-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 1 / 7 Version 1.1 Product Features Applications

  • GaN on SiC Chip on Board
  • Surface Mount Hybrid Type
  • Asymmetric Doherty Amplifier
  • High Efficiency
  • No Matching circuit needed
  • RF Sub-Systems
  • Base Station
  • RRH
  • 4G/ LTE system
  • Small cell

Description

Accommodating the future of 4G/LTE small cells, RFHIC introduc es RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This hi gh performance amplifier achieves high efficiency of 45%, and powers 7W over the frequency range from 2300MHz to 2400MHz. In tegrated with Asymmetrical Doherty configurations, RTH Series is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal dissipation. Electrical Specifications @ Vds =31V, Ta=25℃ PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 2300 - 2400 ZS = ZL = 50 ohm Power Gain dB 12 14 - Carrier Idq = 150mA Vgp = -4.8V Gain Flatness -3.0 - 3.0 Input Return Loss - -9 -6 Pout @ Average dBm - 38.5 - Pout @ Psat dBm 46 47 - Pulse Width=20us, Duty10% ACLR @ BW 10MHz LTE (PAPR 7.5dB) dBc - -27 -24 Non DPD - -53 - With DPD Drain Efficiency % 40 45 - Carrier Idq mA - 120 - Total Ids - 500 - Supply Voltage V - -3.5 -2.0 Vgc - -5.0 -4.0 Vgp 30.5 31 31.5 Vds Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate voltage supply and last turn on the Drain voltage supplies Turn off : Turn off the Drain voltage and last turn off the Gate voltage Note 1. ACLR Measured Pout=38.5dBm @ fc± 10MHz / 9.015MHz LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180) 2. RTH Series have internal DC blocking capacitors at the RF input and output ports Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 5 - Dimension ㎜ 28 x 19 x 4.8 - Package Type : NP-8CL

GaN Doherty Hybrid Amplifier RTH23007-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 7 Version 1.1 Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgc Vgp Drain-Source Voltage V 50 Vds Gate Current mA 4.0 Igs Operating Junction Temperature °C 225 T J Operating Case Temperature °C -30 ~ 85 T C Storage Temperature °C -40 ~ 100 T STG Operating Voltage & Input Level *Vgp(Peaking gate voltage) set: Lower Vgp of Δ-1.9V at Peaking Idq 10mA PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V 30.5 31 31.5 Vds Gate Voltage (on-stage) V - Vgc @Carrier Idq -2 Vgc Gate Voltage (on-stage) V - Vgp -2 Vgp Gate Voltage (off-stage) V - -8 - Vgc Gate Voltage (off-stage) V - -8 - Vgp RF Input Level dB - - 35 Pin Block Diagram *Note Directional coupler, isolator and drive amplifier MUST be located CLOSE to the DUT(device under test) is needed for best perfo rmance.

GaN Doherty Hybrid Amplifier RTH23007-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 3 / 7 Version 1.1 Application Circuit Part List Location Model No. Spec. Maker C3, C4 1812C225K101CT 2.2uF / 100V WALSIN C1, C2 C3216X7R1C106K 10uF / 16V TDK Evaluation Board RO4350B 2Layer, 30mil ROGERS

GaN Doherty Hybrid Amplifier RTH23007-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 4 / 7 Version 1.1 Performance Charts * Bias condition @ Carrier Idq= 150mA, Vgp= 4.8V , Ta=25℃ Power Gain vs. Frequency Psat vs. Frequency Power Gain [dB] Frequency[GHz] Power Gain @Pout=38.5dBm Psat [dBm] Frequency[GHz] Psat @Pulse Width 20us (Duty 10%) ACLR vs. Frequency Drain Efficiency vs. Frequency -35 -33 -31 -29 -27 -25 ACLR [dBc] Frequency[GHz] ACLR @L TE 10MHz(w/o DPD) Efficiency [%] Frequency[GHz] Efficiency ACLR with Digital Predistortion Ids vs. Frequency -70 -60 -50 -40 -30 -20 -10 2325 2333 2342 2350 2358 2367 2375 ACLR [dBc] Frequency[MHz] w/o DPD w DPD *DPD Engine: Optichron OP6180 450 470 490 510 530 550 Ids[mA] Frequency[GHz] Ids @Pout=38.5dBm

GaN Doherty Hybrid Amplifier RTH23007-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 5 / 7 Version 1.1 Package Dimensions (Type: NP-8CL) * Unit: mm[inch] | Tolerance: ±0.15[.008] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function

1 GND 4 Vgp 7 GND 10 Vds

2 RF Input 5 GND 8 RF Output 11 GND

3 GND 6 Vds 9 GND 12 Vgc

Recommended Pattern Recommended Mounting Configuration * Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting scre ws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.

GaN Doherty Hybrid Amplifier RTH23007-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 6 / 7 Version 1.1 Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative V oltage Bias which operates alongside a Positive V oltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circ uit. Therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND 2. Apply Gate V oltage (Vgc and Vgp) 3. Apply Drain V oltage (Vds) 4. Apply the RF Power During Turn-Off 1. Turn off RF power 2. Turn off Drain V oltage (Vds), and then, turn off the Gate V oltage (Vgc and Vgp) 3. Remove all connections Turn On Turn Off - Sequence Timing Diagram -

GaN Doherty Hybrid Amplifier RTH23007-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 7 / 7 Version 1.1 Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec Reflow Cycle Limit= 1time * Measured reflow profile

Ordering Information

Part Number Package Design RTH23007-10 -R (Reel) -B (Bulk) -EVB (Evaluation Board)

Revision History

Part Number Release Date Version Modification Data Sheet Status RTH23007-10 2013.11.15 1.1 Electrical specification (1p) - RTH23007-10 2013.06.04 1.0 Electrical specification Operating V oltage & Input Level - RTH23007-10 2013.02.25 0.5 Frequency Range Package Dimension Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expect ed to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.