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Technical content

GaN Doherty Hybrid Amplifier RTH07003-20D Korean Facilities : 82-31-8069-3000 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 1 / 6 Version 3.0 Product Features Applications

  • GaN on SiC Chip on Board
  • Surface Mount Hybrid Type
  • 2-Stage Doherty Amplifier
  • High Efficiency
  • No Matching circuit needed
  • RF Sub-Systems
  • B ase Station
  • RRH
  • 4G/ LTE system
  • Small cell

Description

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH07003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. Electrical Specifications @ Vds1=5V, Vds2=30V, Ta=25℃ PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 773 778 783 ZS = ZL = 50 ohm Power Gain dB 27 30 - - Gain Flatness -1.5 - +1.5 Input Return Loss - -14 -9 Pout @ Average dBm - 34.7 - 2.951W Pout @ Saturation dBm 42.2 42.7 - Pulse Width=20us, Duty cycle 10% ACLR @ BW 10MHz LTE (PAPR 7.5dB) dBc - -29 -25 Non DPD - -53 - With DPD Doherty Efficiency - 43 - Tc=25℃ Total Efficiency 35 38 - Drive Amp. Idq mA - 180 - - Carrier Amp. Idq - 120 - Inverted Doherty Peaking Amp. Idq - 0 - Supply Voltage V -4.9 -4.5 -3.0 Vgc -4.9 -2.8 -2.0 Vgp - 5.0 - Vds1 - 30 - Vds2 Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on  Turn on the Gate voltage supply and last turn on the Drain voltage supplies Turn off  Turn off the Drain voltage and last turn off the Gate voltage Note 1. ACLR Measured Pout=34.7dBm @ fc± 10MHz / 9.015MHz LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF Mechanical Specifications PARAMETER UNIT TYPICAL RATING Mass g 6.0 ±1.0 Dimension ㎜ 32 x 20 x 4.2 ±0.15 Package Type : SP-1E

GaN Doherty Hybrid Amplifier RTH07003-20D Korean Facilities : 82-31-8069-3000 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 2 / 6 Version 3.0 Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL CONDITION Gate-Source Voltage V -10 ~ 0 Vgc Vgp Tc=25°C Drain-Source Voltage 1 V 7 Vds1 Tc=25°C Drain-Source Voltage 2 V 50 Vds2 Tc=25°C Gate Current mA 4 Carrier Peaking Tc=25°C Power Dissipation W 6.1 PD Tc=85°C Operating Junction Temperature °C 225 TJ - Operating Case Temperature °C -30 ~ 85 TC - Storage Temperature °C -40 ~ 100 TSTG - Soldering Temperature*1 °C 260 Ts 30s Max. RF Input Level (Pulse) dBm 30 Pin Tc=25°C *1 Reflow cycle limit : 1time Operating Voltages & Input level *2 Vgc(Pin#13) set: Lower Vgc of Δ-1.75V at Peaking Idq 100mA±5% *3 Vgp(Pin#5) set: Carrier Idq 120mA±5% PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage 1 V 4.75 5 5.25 Vds1 Drain Voltage 2 V 29.5 30 30.5 Vds2 Gate Voltage (on-stage) V -4.9 Vgc*2 -3.0 Vgc Gate Voltage (on-stage) V -4.9 Vgp*3 -2.0 Vgp Gate Voltage (off-stage) V - -8 - Vgc Gate Voltage (off-stage) V - -8 - Vgp RF Input Level (Pulse) dBm - - 25 Pin ESD Level PARAMETER STANDARD RESULT HBM JESD22-A114E Class 1B/ passed V oltage 700V MM JESD22-A115C Class A/ passed Voltage 150V

GaN Doherty Hybrid Amplifier RTH07003-20D Korean Facilities : 82-31-8069-3000 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 3 / 6 Version 3.0 Block Diagram Application Circuit Bill of Material (Evaluation board) LOCATION Part Number Value Manufacturer C3, C4, C6 1812B225K101CT 2.2uF / 100V WALSIN C2, C5 GRM188R71C105KA12D 1uF / 16V MURATA PCB RO4350B 2Layer, 20mil, 1oz ROGERS

GaN Doherty Hybrid Amplifier RTH07003-20D Korean Facilities : 82-31-8069-3000 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 4 / 6 Version 3.0 Performance Charts * Bias condition @ Drive Idq=180mA, Carrier Idq=120mA, Peaking Idq=0mA, Ta=25℃ Power Gain vs. Output Power Drain Efficiency vs. Output Power ACLR vs. Output Power Current vs. Output Power 18 20 22 24 26 28 30 32 34 36 38 Power gain [dB] Output Power [dBm] 778MHz 18 20 22 24 26 28 30 32 34 36 38 Drain Efficiency [%] Output Power [dBm] 778MHz -55 -50 -45 -40 -35 -30 -25 18 20 22 24 26 28 30 32 34 36 38 ACLR [dBc] Output Power [dBm] 778MHz_Low 778MHz_Up 100 150 200 250 300 350 18 20 22 24 26 28 30 32 34 36 38 Current [mA] Output Power [dBm] Drive amp. Carrier amp. Peaking amp.

GaN Doherty Hybrid Amplifier RTH07003-20D Korean Facilities : 82-31-8069-3000 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 5 / 6 Version 3.0 Package Dimensions (Type: SP-1E) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description (RTH07003-20D) Pin No Function Pin No Function Pin No Function Pin No Function

1 GND 4 GND 8 GND 11 Vds2

2 RF In 5 Vgp 9 RF Out 12 GND

3 GND 6 GND 10 GND 13 Vgc

7 Vds2 14 Vds1

Recommended Mounting Configuration * Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 7. We recommend that the PCB with the RF device in a hybrid package(RTH Series) is not washed to remove the flux. [.787] [1.26] 4.2 [.165] LID PCB [.157] [.276] [.276] [.276] [.276] [.197] 31.8 [1.252] [.039] [.118] 1.5 [.059] 2.5 [.098]

GaN Doherty Hybrid Amplifier RTH07003-20D Korean Facilities : 82-31-8069-3000 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 6 / 6 Version 3.0

Ordering Information

Part Number Package Design RTH07003-20D -R (Reel) -B (Bulk) -EVB (Evaluation Board)

Revision History

Part Number Release Date Version Modification Data Sheet Status RTH07003-20D 2016.04.20 3.0 Electrical Specification (1p) Performance Charts (3p) - RTH07003-20D 2015.06.22 1.3 Electrical Specification - RTH07003-20D 2015.06.04 1.2 Electrical Specification Absolute Maximum Ratings - RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 655-1121-. For all other inquiries, please contact the International Sales Team at 82-31-8069-3000.