RSD050N06 ISC | Alldatasheet
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Technical content
iscN-ChannelMOSFETTransistor RSD050N06 www.iscsemi.com 1
FEATURES
- Drain Current-ID=5A@TC=25℃
- Drain SourceVoltage-VDSS=60V(Min)
- Static Drain-SourceOn-Resistance -RDS(on) =109mΩ(Max)@VGS=10V
DESCRIPTION
- DC-to-DCConverter
- GeneralIndustrialApplications
- PowerMotorControl ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGS Gate-SourceVoltage-Continuous ±20 V ID DrainCurrent-Continuous 5 A IDM DrainCurrent-SinglePulse 15 A PD TotalDissipation@TC=25℃ 15 W TJ Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 8.33 ℃/W
iscN-ChannelMOSFETTransistor RSD050N06 www.iscsemi.com 2 ELECTRICALCHARACTERISTICS（TC=25℃ unless otherwisespecified） SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=1mA 60 -- V IDSS ZeroGateVoltageDrainCurrent VDS=60V;VGS=0 -- 10 uA IGSS Gate-BodyLeakageCurrent VGS= ±20V;VDS=0 -- ±10 uA VGS(th) GateThresholdVoltage VDS=VGS;ID=1mA 1.0 3.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=5A -- 109 mΩ VSD ForwardOn-Voltage IS=5A;VGS=0 -- 1.2 V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.