RS801 SEMTECH_ELEC | Alldatasheet

Document overview

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  • PDF pages: 2

Technical content

Features

  • Low leakage
  • Low forward voltage
  • Mounting position: Any
  • Surge overload rating: 250 amperes peak
  • Ideal for printed circuit boards
  • High forward surge current capability Absolute Maximum Ratings and Characteristics Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave,60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols RS 801 RS 802 RS 803 RS 804 RS 805 RS 806 RS 807 Units Maximum recurrent peak reverse voltage V RRM 50 100 200 400 600 800 1000 Volts Maximum RMS bridge input voltage V RMS 35 70 140 280 420 560 700 Volts Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 Volts Maximum average forward rectified output current at TC = 75 OC with heat sink IO 8 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM 250 Amps Maximum forward voltage drop per element at 8A DC V F 1.1 Volts @TA = 25OC 10 µAmps Maximum reverse current at rated DC blocking voltage per element @TC =100 OC IR 0.2 mAmps Operating and storage temperature range T J ,TS -55 to +150 OC RS-8

Dated : 09/01/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® RS801 THRU RS807 Instantaneous Forward Voltage - V Instantaneous Forward Current - A 0.4 0.1 0.2 0.5 0.6 TC=150 C(TYP) pulse test per one diode 10.8 1.2 TC=25 C(TYP) Typical Instantaneous Forward Characteristics Average Rectified Forward Current - A Power Dissipation PF (W 0 2 sine wave Tj=150 C 64 8 10 12 Power Dissipation Case Temperature ( C) Average Forward Current (A) 25 50 12510075 150 175 Typical Forward Current Derating Curve Tj=25 C Non- repetitive Sine wave Surge Forward Current Capability Number Of Cycle V CE-Collector Em itter Voltage-V 2 205 10 200 100 260

0 IFSM

8.3ms 8.3ms