RS3AB TAYCHIPST | Alldatasheet
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50V-1000v 3.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Web Site: www.taychipst.com1 of 2
FEATURES
E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS /c183 Glass Passivated Die Construction /c183 Fast Recovery Time For High Efficiency /c183 Low Forward Voltage Drop and High Current Capability /c183 Surge Overload Rating to 30A Peak /c183 Ideally Suited for Automated Assembly /c183 Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data /c183 Case: Molded Plastic /c183 Terminals: Solder Plated Terminal - Solderable per MIL-STD-202, Method 208 /c183 Polarity: Cathode Band or Cathode Notch /c183 SMA Weight: 0.064 grams (approx.) /c183 SMB Weight: 0.093 grams (approx.) /c183 Mounting Position: Any /c183 Marking: Type Number RS3DB RS3GB RS3JB RS3KB Maximum recurrent peak reverse voltage V RRM 200 400 600 800 V Maximum RMS voltage V RWS 140 280 420 560 V Maximum DC blocking voltage V DC 200 400 600 800 V Maximum average forword rectifiedcurrent at c T L =90 O C I F(AV) Peak forward surge current @ T L = 110°C 8.3ms c single half-sine-wave superimposed on rated c load I FSM A Maximum instantaneous forward voltage at 3.0A V F V Maximum DC reverse current @T A =25 o C at rated DC blockjing voltage @T A =125 o C Maximum reverse recovery time (NOTE 1) t rr 250 ns Typical junction capacitance (NOTE 2) C J pF Operating junction and storage temperature range T J T STG o C 1000 700 100 150 100.0 RS3AB o C/W RS3BB 3.0 500 Typical thermal resitance (NOTE 3) )copper padareas RS3MB UNI TS 50 100 NOTE: 1.Reverse recovery time test conditions:I F =0.5A,I R =1.0A,I rr =0.25A 2. M easured at 1.0M Hz and applied reverse voltage of 4.0 Volts 50 100 200.0 1.30 5.0 I R A R JA 40.0
RATINGS AND CHARACTERISTIC CURVES RS3AB THRU RS3MB E-mail: sales@taychipst.com Web Site: www.taychipst.com 2 of 2 SURFACE MOUNT FAST RECOVERY RECTIFIER RS3AB THRU RS3MB 50V-1000v 3.0A 2.0 1.0 Resistive or inductive Load P.C.B.MOUNTED ON COPPERPAND AREAS 3.0 60 70 80 90 100 110 120130 140 150 160 1 1 0 1 00 T L =100 C 8.3ms Single Half Sine-Wave (JEDEC Method) O 100 0.4 0.01 0.1 T J =25 C O Puise Width=300 S 1%DUTY CYCLE 1.8 200 0.1 TJ=25 C 60 80 100 100 TJ=125 C 1 1000 100 T J =25 C f=1.0MHZ Vsig=50mVp-p AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWAR D CURRENT,AMPERES INSTANTANEOUS REVERS E CURRENT,MICROAMPERES R EVER SE VO LT AG E,VO LT S JUNCTION CAPACITANCE,PF LEAD TEMPERATURE N U M BER O F CYCLES AT 60H z INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT FIG.3 -- TYPICAL FORWARD CHARACTERISTICS