RS2AF HDSEMI | Alldatasheet

Document overview

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Technical content

Features

o

  • VRRM 50V-1000V
  • High surge current capability

Applications

  • Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● RS2AF-RS2MF : RS2A-RS2M RS2AF THRU RS2MF Item Symbol Unit Conditions Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 Average Forward Current IF(AV) A 60Hz Half-sine wave, Resistance load, 2 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave,1 cycle, 50 Junction Temperature TJ ℃ -55~+150 StorageTemperature TSTG ℃ -55 ~ +150 Item Symbol Unit Test Condition Peak Forward Voltage VFM V IFM=2.0A 1.3 Peak Reverse Current IRRM1 RM=VRRM Ta=25 5.0 IRRM2 Ta=125 100 Reverse Recoverytime trr ns IF=0.5A I R=1A IRR=0.25A 150 250 500 Thermal Resistance(Typical) Typical junctioncapacitance Cj pF Between junction and ambient 55 Between junction and terminal 18 R θJ-A ℃Ta=75 Ta=25℃ RS2 JF KFAF BF DF MF GF RS2 JF KFAF BF DF MF GF V μA V RMS V 35 70 140 280 420 560 700Maximum RMS Voltage

H igh Diode Semiconductor V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas Ta( 100 0.4 0.8 1.2 1.6 2.0 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT TL=90 8.3ms Single Half Sine Wave 1 10 100 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=150 Tj=100 0.01 0 20 40 60 80 100 0.1 1.0 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100

H igh Diode Semiconductor 4.65 1.9 0.55 SMAF SMAF Dimensions in inches and (millimeters) .146(3.70) .130(3.30) .106(2.70) .094(2.40) .063(1.60) .051(1.30) .193(4.90) .173(4.40) .009(0.23) .007(0.18) .051(1.30) .039(1.00) .047(1.20) .035(0.90)

H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMAF