RS2ABF HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● RS2ABF-RS2MBF : RS2AB-RS2MB Electrical Characteristics (Ta=25℃ Unless otherwise specified） RS2ABF THRU RS2MBF Fast Recovery Rectifier Diode RS2 Item Symbol Unit Test Conditions Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 2.0 Surge(Non-repetitive)Forward Current I FSM A 60 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 50 100 200 400 600 800 1000 60Hz Half-sine wave, Resistance load, 60Hz Half-sine wave,1 cycle, ℃Ta=75 35 70 140 280 420 560 700 V RMS V ABF BBF DBF GBF JBF KBF MBF Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =2.0A 1.3 Maximum reverse recovery time t rr ns I F =0.5A,I R =1.0A,I rr =0.25A 150 250 500 I RRM1 Ta =25℃ 2.5 Peak Reverse Current I RRM2 μA V RM RRM Ta =125℃ 200 R θJ-A Between junction and ambient 50 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and terminal 40 RS2 ABF BBF DBF GBF JBF KBF MBF Maximum RMS Voltage
H igh Diode Semiconductor IFSM(A) NumberofCycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3msSingle Half Sine Wave JEDECMethod 1 2 10 20 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25℃ Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) FIG.4: TYPICALREVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25℃ Tj=125℃ Tj=100℃ 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 1 . 5 2 . 5 50 1 0 0 150 FIG.1 FORWARDCURRENT DERATINGCURVE IO(A) S ingle Phase Half Wave60HZ Resisteveor InductiveLoad 0.375''(9.5mm) Lead Length Ta( ℃) 100 1.0 2.0 0 . 5 DiagramofcircuitandTestingwaveformofreverserecoverytimeFIG.5
H igh Diode Semiconductor SMBF SMBF 1.73(4.40) 1.65(4.20) 1.46(3.70) 1.38(3.50) 0.86(2.20) 0.75(1.90) 2.16(5.50) 2.00(5.10) .100(0.26) .007(0.18) .051(1.30) .043(1.10) Dimensions in inches and (millimeters) .040(1.00) 4.80 2.54 1.8
Reel Taping Specifications For Surface Mount Devices-SMBF H igh Diode Semiconductor 3.80 0.150 5.75 0.226