RS2AA HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier From A To MX Marking Polarity: Color band denotes cathode Glass passivated chip ● RS2X H igh Diode Semiconductor SMAK Notes: pad areas RS2A THRU RS2M RS2 Item Symbol Unit Test Conditions A B D G J K M Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 2.0 Surge(Non-repetitive)Forward Current I FSM A 50 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition A B D G J K M Peak Forward Voltage V F V I F =2.0A 1.3 Maximum reverse recovery time t rr ns I F =0.5A,I R =1.0A,I rr =0.25A 150 250 500 I RRM1 Ta =25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta =125℃ 50 R θJ-A Between junction and ambient 50 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and terminal 40 50 100 200 400 600 800 1000 RS2 60Hz Half-sine wave, Resistance load, 60Hz Half-sine wave,1 cycle, ℃Ta=90 35 70 140 280 420 560 700 V RMS V Ta =25℃ Maximum RMS Voltage
H igh Diode Semiconductor V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas Ta( 100 0.4 0.8 1.2 1.6 2.0 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT TL=90 8.3ms Single Half Sine Wave 1 10 100 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=150 Tj=100 0.01 0 20 40 60 80 100 0.1 1.0 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100
H igh Diode Semiconductor SMAK SMAK 0.106(2.70) 0.096(2.45) 4.12 1.8
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMA