RS1AF HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● RS1AF-RS1MF : RS1A-RS1M RS1AF THRU RS1MF Between junction and ambient 105 Between junction and terminal 32 ℃90 RS1 JF KFAF BF DF GF MF RS1 JF KFAF BF DF GF MF V RMS V 35 70 140 280 420 560 700Maximum RMS Voltage
H igh Diode Semiconductor V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas Ta( ć 100 0.2 0.4 0.6 0.8 1.0 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT TL=90 ć 8.3ms Single Half Sine Wave 1 10 100 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 ć Tj=150 ć Tj=100 ć 0.01 0 20 40 60 80 100 0.1 1.0 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 ć Pulse width=300us 1% Duty Cycle 0.1 1.0 100
H igh Diode Semiconductor 4.65 1.9 0.55 SMAF SMAF Dimensions in inches and (millimeters) .146(3.70) .130(3.30) .106(2.70) .094(2.40) .063(1.60) .051(1.30) .193(4.90) .173(4.40) .009(0.23) .007(0.18) .051(1.30) .039(1.00) .047(1.20) .035(0.90)
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMAF