RRC29050-10 RFHIC | Alldatasheet

Document overview

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Technical content

GaN Hybrid Power Amplifier RRC29050-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 1 / 5 Version 0.2 Product Features Applications

  • Frequency from 2.7 ~ 3.1GHz
  • High output power : 47dBm(Typ)
  • High gain : 24dB(Typ)
  • High efficiency
  • High thermal stability
  • Internally matched for ease of use
  • 10% Duty Cycle, 500us Pulse Width
  • Small Size & Light Weight
  • Surface mount Hybrid type
  • Radar System

Description

The RRC29050-10 is designed for Radar system application frequencies from 2.7 ~ 3.1GHz and GaN HEMT technology has been used that performs high breakdown voltage, wide bandwidth and high efficiency. RRC29050-10 has been designed 2 stages to have higher Gain at the wide frequency range of 2.7 ~3.1GHz. GaN HEMT technology has been used to every amplifier in it for better reliabil ity. Since it is high efficiency amplifier, it can perform at max 10 % duty cycle and 500us of pulse width. A droop feature is below 1dB for long pulse usages. Electrical Specifications @ Vds=48V, Ta=25°C, 50Ω System PARAMETER UNIT MIN TYP MAX CONDITION Operating Frequency MHz 2700 3100 3100 Idq1 = 100~150 mA Idq2 = 100~150 mA Operating Bandwidth MHz - 400 - Output Pulse Power W 40 50 - Input Pulse Power dBm 18 - 24 Power Gain dB - 24 - Gain Flatness dB - - - Duty Cycle % - 5 10 Pulse Width us - 100 500 Drain Efficiency % - 50 - Amplitude Pulse Droop dB -0.5 0.5 1 Harmonics 1 to N dBc - -20 - Spurious Level dBc - - -60 Rise Time ns - - 200 Fall Time ns - - 200 Phase Deviation ˚ -20 - 20 Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate V oltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain V oltage and last turn off the Gate voltage Note 1. Test Pulse conditions = 100us, 10% 2. Above electrical specifications is measured by connecting electrolytic condenser 200uF to DC. Please make sure that electrolyti c condenser is connected properly while testing the module. Package Type : NP-1E

GaN Hybrid Power Amplifier RRC29050-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 2 / 5 Version 0.2 Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2 - Dimension ㎜ 20.5 x 15 x 4.8 - Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs1 Vgs2 Drain-Source Voltage V 100 Vds Gate Current mA 50 Ig Operating Junction Temperature °C 225 T J Operating Case Temperature °C -30 ~ 80 T C Storage Temperature °C -55 ~ 150 T STG Operating Voltages PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V 47 48 49 Vds Gate Voltage (on-stage) V - Vgs1@Idq1 -2 Vgs 1 Gate Voltage (on-stage) V - Vgs2@Idq2 -2 Vgs 2 Gate Voltage (off-stage) V - -8 - Vgs 1 Gate Voltage (off-stage) V - -8 - Vgs 2 Power Supply PARAMETER UNIT MIN TYP MAX SYMBOL Drain-Source current A - - 3 Ids Gate-Source Current (on-stage) mA - - 20 Igs Gate-Source Current (off-stage) mA - - 0.04 Igs Block Diagram

GaN Hybrid Power Amplifier RRC29050-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 3 / 5 Version 0.2 Package Dimensions (Type: NP-1E) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function

1 RF Input 4 Vgs1 8 GND 11 GND

2 GND 5 Vds1 9 GND 12 GND

3 GND 6 Vgs2 10 RF Output 13 GND

  • - 7 Vds2 - - 14 GND Recommended Pattern Recommended Pattern Detail ‘A’ * Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting scre ws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Detail Pattern ‘A’

GaN Hybrid Power Amplifier RRC29050-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 4 / 5 Version 0.2 Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative V oltage Bias which operates alongside a Positive V oltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circ uit. Therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs1 and Vgs2. 3. Apply Vds1 and Vds2. 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds1,2 and then, turn off the Vgs1 and Vgs2. 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram -

GaN Hybrid Power Amplifier RRC29050-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facilities : 919-677-8780 / sales@rfhicusa.com 5 / 5 Version 0.2 Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ SecDrop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile

Ordering Information

Part Number Package Design RRC29050-10 -R (Reel) -B (Bulk) -EVB (Evaluation Board)

Revision History

Part Number Release Date Version Modification Data Sheet Status RRC29050-10 2012.9.10 0.2 New datasheet format. Preliminary RRC29050-10 2011.9.10 0.1 - Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expect ed to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919- 677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078.