RMPA1951-102

RMPA1951-102 RAYTHEON | Alldatasheet

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The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective means to reduce current consumption during peak phone usage at backed-off RF power levels . Analog or digital bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and excellent linearity are achieved using Raytheon’s Heterojunction Bipolar Transistor (HBT) process. Electrical Characteristics3 Parameter Min Typ Max Unit Operating Frequency 1850 1910 MHz Gain (Po=0 dBm) 20 24 dB (Po=28 dBm) 25 27 dB Linear Output Power 29 dBm Power-Added Efficiency (Po=16 dBm) 5 6.5 % (Po=28 dBm) 28 32 % (Po=29 dBm) 31 35 % ACPR (Offset ≥ 1.25 MHz) 4 -49 -46 dBc Noise Figure 5 6 dB Noise Power (Po ≤ 29 dBm) -135 dBm/Hz Input VSWR (50Ω ) 2.0:1 2.5:1 Output VSWR (50Ω ) 3 . 5 : 1 Parameter Min Typ Max Unit Stability (All spurious)5 -70 dBc Harmonics (Po ≤ 29 dBm) 2fo, 3fo, 4fo -30 dBc Quiescent Current (Vref=2.7V) 80 100 mA (Vref=2.0V) 50 mA (Vref=1.7V) 35 mA Power Shutdown Current 6 21 0 uA Vcc 3.0 3.5 4.5 V Vref 1.7 2.7 3.2 V Iref 13 mA Case Operating Temperature -30 +85 °C Notes: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. 2. Typical RF input power for CDMA Pout = +28 dBm. 4. Po ≤ 28 dBm at Vcc=3.5V; CDMA Waveform measured using the ratio of average power within a 1.23 MHz channel to average power within a 30 kHz bandwidth at + 1.25 MHz offset. 5. Load VSWR ≤ 6:1, all phase angles. Absolute Maximum Ratings1 Parameter Symbol Min Typical Max Units Supply Voltage Vcc 3.5 6 V Reference Voltage Vref 1.5 2.7 4.0 V RF Input Power2 Pin +1 +7 dBm Load VSWR V SWR 1.2:1 10:1 Case Operating Temperature T c -40 +25 +110 °C Storage Temperature T stg -55 +25 +150 °C RMPA1951-102 3V PCS CDMA Power Amplifier Module

362 Lowell Street

Andover, MA 01810 Revised August 27, 2001 Page 2 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Figure 1 Package Outline and Pin Designations Figure 2 Functional Block Diagram of Packaged Product VCC=3.5V (nom) VREF=2.7V (nom) 1850-1910 MHz

50 Ohms I/O

(4) Input Stage Output Stage Output Stage Bias Input Stage Bias MMIC PA Module GND (Pin 7)- (Package Base) RF OUT (5) VCC (1) RF IN (2) VREF (3) GND (6) Interstage Match Collector Bias (Topside View) Input Matching Network Output Matching Network Reference Adjust Dimensions in inches (mm) Vcc RF In VREF N/C RF Out GND GND DescriptionPin # RMPA1951-102 3V PCS CDMA Power Amplifier Module (5.08) (2.46) (2.54) (4.82)

Andover, MA 01810 Revised August 27, 2001 Page 3 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION With device marking oriented right side up, RF IN is on the left and RF OUT is on the right. Blue wire is collector DC voltage input (pin 1). VCC= +3.5V nominal. Brown wire is reference DC voltage input (pin 3). Vref=+ 2.7V nominal to obtain Iccq= 80mA. Operation at lower or higher quiescent currents can be achieved by decreasing or increasing Vref voltage relative to +2.7V. First apply +3.5V to the collector supply (blue wire). Next apply +2.7V to the reference supply to brown wire. Quiescent collector current with no RF applied will be about 80 mA. Reference supply current with or without RF applied will be about 13 mA. When turning amplifier off, reverse power supply sequence. Apply -20dBm RF input power at PCS frequency (1850 -1910MHz). After making any initial small signal measurements at this drive level, input power may be increased up to a maximum of +6dBm for large signal, single-tone or digital CDMA measurements. Do not exceed +6dBm input power. Evaluation Board Instructions Figure 3 Evaluation Board Layout and Schematic C1 * 2.2 uF VCC SMA1 RF IN SMA2 RF OUT VREF GND N/C (package base) 50 ohm TRL 50 ohm TRL * Minimum VCC bypass capacitance recommended for best RF performance. Raytheon RMPA1951 PPYYWWZZZ PCB Specifications: Material: Rogers RO4003 Dimensions: 2.0”x1.5”x0.032” Metallization: 1/2 OZ Copper Cladding Vcc: +3.5V Icc: ≅ 80mA BLUE WIRE RF IN Vref: +2.7V Ibb: ≅ 13 ma BROWN WIRE GND RF OUT GND N/C RF OUTRF IN VCCG656524 Raytheon RMPA1951 - 102 PPYYWWXX (ALT)PPYYWWZZZ VREF RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 4 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION CAUTION: THIS IS AN ESD SENSITIVE DEVICE. /G75Precautions to Avoid Permanent Device Damage: – Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. – Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. – Static Sensitivity: Follow ESD precautions to protect against ESD damage:

• A properly grounded static-dissipative surface on which to place devices.
• Static-dissipative floor or mat.
• A properly grounded conductive wrist strap for each person to wear while handling devices. – General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. – Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. /G75Device Usage: Raytheon recommends the following procedures prior to assembly. – Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125 °C baking temperature. – Assemble the dry-baked devices within 7 days of removal from the oven. – During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C – If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. /G75Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. – Reflow Profile
• Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 1- 2°C/sec.
• Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at 150°C.
• Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215-220°C, with a maximum limit of 225°C.
• Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. /G75Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. /G75Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed. Application Information RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 5 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Figure 4 Recommended Solder Reflow Profile Soak at 150 oC for

60 Sec

45 Sec

(Max) above 183 oC 1oC/Sec 183 oC

10 Sec

Time (Sec) Deg C RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 6 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Single-Tone Output Power, Gain and Power-Added Efficiency 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 I nput P o wer (dBm) Power (dBm), Gain (dB), E fficiency (%) Output Power Power Gain Power-Added Efficiency Tested at: /G75Vcc=3.5V /G75Vref=2.7V /G75f=1880 MHz /G75Tc=+25°C 15.00 17.50 20.00 22.50 25.00 27.50 30.00 Output Power (dBm) Gain (dB) Tc= +25 deg C Tc= -30 deg C Tc= +85 deg C CMDA Gain vs Output Power Tested at: /G75Vcc=3.5V /G75Vref=2.7V /G75f=1880 MHz /G75Pout < 29 dBm Performance Data Figure 5 Figure 6 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 7 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION -51.50 -51.00 -50.50 -50.00 -49.50 -49.00 -48.50 -48.00 -47.50 1840 1850 1860 1870 1880 1890 1900 1910 1920 Frequency (MHz) ACPR1 (dBc) ACPR1_28_1 ACPR1_28_2 ACPR1_28_3 Tested at: /G75Vcc=3.5V /G75Vref=2.7V /G75Pout=+28 dBm /G75Offset= ±1.25 MHz /G75Tc=+25°C ACPR vs Frequency (3 Devices) ACPR vs Output Power and Temperature -75.00 -70.00 -65.00 -60.00 -55.00 -50.00 -45.00 -40.00 Output Power (dBm) ACPR1 (dBc) Tc=+25 deg C Tc=-30 deg C Tc=+85 deg C Tested at: /G75Vcc=3.5V /G75Vref=2.7V /G75f=1880 MHz /G75Offset= ±1.25 MHz /G75Pout < 28 dBm Figure 7 Figure 8 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 8 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION 0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 40.00 Output Power (dBm) Efficiency (%) Tc= +25 deg C Tc=-30 deg C Tc=+85 deg C PAE vs Output Power and Temperature Tested at: /G75Vcc=3.5V /G75Vref=2.7V /G75F=1880 MHz DC Collector Current vs Output Power and Reference Voltage 100 200 300 400 500 600 700 Reference Voltage, Vref (V) Collector Current, Icc (mA) Pout=+4 dBm Pout=+16 dBm Pout=+24 dBm Pout=+28 dBm Pout=+29 dBm Tested at: /G75Vcc=3.5V /G75Vref=2.65 –3.05V /G75F=1880 MHz /G75Tc = +25°C Figure 9 Figure 10 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 9 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION DC Power Management for Reduced-Power Operating Modes Many Cellular/PCS handsets can benefit from gain control and DC power management to optimize transmitter performance while operating at backed-off output power levels. Oftentimes, cellular systems will operate at 10-20 dB back-off from maximum-rated linear power and peak power-added efficiency. The ability to reduce current consumption under these conditions, without sacrificing linearity, is critical to extending battery life in next- generation handheld phones. The RMPA1951-102 PA offers the ability to lower quiescent current by more than 60 percent and small-signal gain by up to 10 dB using a single control voltage (Vref). Even with the amplifier biased for lowest current consumption, high linearity is maintained over the full operating temperature range and at output power levels up to +16 dBm. Bias and gain control through Vref provides complete flexibility for the handset designer, allowing the user to define the operation by either an analog (continuously-variable) or digital (discrete-step) voltage input. As an example, reducing the Vref voltage from 2.7V (nominal) to 1.7V (minimum) can lower PA current consumption by more than 20 percent at an output power of +16 dBm. The following charts demonstrate analog and digital control techniques for minimizing DC power consumption at reduced RF output power levels. Figures 11 through 19 characterize analog control over a reference voltage (Vref) range of 1.7V to 2.7V. Quiescent current is reduced to less than 30 mA and small-signal gain is reduced by 10 dB at Vref=1.7V. Operating current at +16 dBm is also reduced by 20 percent, or 35 mA, at the lowest reference voltage. Figures 20 through 23 feature digital control using three discrete voltage levels (2.7V, 2.0V, 1.7V) to optimize linear PA performance over three output power ranges (< +4 dBm, +4 dBm to +16 dBm, >+16 dBm). Alternate output power ranges can be selected depending on the power-probability use in the cellular system. Parameter Symbol Min Typical Max Units Conditions Low-Power Range P04 +4 dBm Vref=1.7V typ Current Icc4 55 mA Gain G4 12.5 dB Linearity ACPR4 -50 dBc Mid-Power Range P16 +4 +10 +16 dBm Vref=2.0V typ Current Icc16 160 mA Gain G16 20 dB Linearity ACPR16 -50 dBc High-Power Range P28 +16 +28 dBm Vref=2.7V typ Current Icc28 560 640 mA Pout=+28 dBm Gain G28 26 dB Linearity ACPR28 -50 dBc DC Power Management Application of Digital Control Technique RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 10 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Vref (V) Power-Added Efficiency (%) PAE (+16 dBm) 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 Vref (V) DC Current (mA) Iccq+Iref Enhanced PAE vs Reference Voltage at Pout=+16 dBm (Analog Control) Total Quiescent Current vs Reference Voltage (Analog Control) Tested at: /G75Vcc=3.5V /G75Tc = +25°C Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +25°C Figure 11 Figure 12 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 11 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Small-Signal Gain (Pout=0 dBm) vs Reference Voltage (Analog Control) Total Current (ICC + Iref) vs Output Power and Reference Voltage (Analog Control) 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 Vref (V) Small-Signal Gain (dB) SS gain 35.0 45.0 55.0 65.0 75.0 85.0 95.0 105.0 115.0 125.0 135.0 145.0 155.0 165.0 175.0 185.0 Output Power (dBm) Icc+Iref (mA) Vref=2.0V Vref=1.9V Vref=1.8V Vref=1.7V Vref=2.7V Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +25°C Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +25°C Figure 13 Figure 14 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 12 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 Output Power (dBm) Gain (dB) Vref=2.0V Vref=1.9V Vref=1.8V Vref=1.7V Vref=2.7V Gain at +25°C vs Output Power and Reference Voltage (Analog Control) Low-Power Mode Gain vs Output Power and Temperature (Analog Control) 10.0 12.5 15.0 17.5 20.0 22.5 Output Power (dBm) Gain (dB) Vref=2.0V (Tc=+25 deg C) Vref=2.0V Tc=+85 deg C) Vref=1.7V (Tc=+25 deg C) Vref=1.7V (Tc=+85 deg C) Tested at: /G75Vcc=3.5V /G75F=1880 MHz Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +25°C Figure 15 Figure 16 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 13 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION -55.0 -54.0 -53.0 -52.0 -51.0 -50.0 -49.0 -48.0 -47.0 -46.0 -45.0 Output Power (dBm) ACPR1 at +/-1.25 MHz Offset (dBc) Vref=2.0V Vref=1.9V Vref=1.8V Vref=1.7V -55.0 -54.0 -53.0 -52.0 -51.0 -50.0 -49.0 -48.0 -47.0 -46.0 -45.0 Output Power (dBm) ACPR1 at +/-1.25 MHz Offset (dBc) Vref=2.0V Vref=1.9V Vref=1.8V Vref=1.7V Low-Power Mode - ACPR at +25°C vs Output Power and Vref (Analog Control) Low-Power Mode - ACPR vs Output Power and Vref at 85°C (Analog Control) Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +85°C Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +25°C Figure 17 Figure 18 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 14 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Low-Power Mode - ACPR vs Output Power and Temperature (Analog Control) -55.0 -54.0 -53.0 -52.0 -51.0 -50.0 -49.0 -48.0 -47.0 -46.0 -45.0 Output Power (dBm) ACPR1 at +/- 1.25 MHz Offset (dBc) Tc=+25 deg C Tc=+85 deg C Vref=2.0V Tested at: /G75Vcc=3.5V /G75Vref=2.0V /G75F=1880 MHz Collector Current vs Output Power at +25°C (Digital Control) 100 150 200 250 300 350 400 450 500 550 600 Output Power (dBm) Collector Current (m A) Vref=2.7V Adj Vref Vref=2.7V Vref=1.7V Vref=2.0V Vref=2.7V (Low-Power) (High-Power)(Mid-Power) Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +25°C Figure 19 Figure 20 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 15 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Collector Current vs Output Power (Pout ≤≤≤≤+16 dBm) at +25°C (Digital Control) Vref=2.0V Vref=1.7V 100 120 140 160 180 Output Power (dBm) Collector Current (mA) Vref=2.7V Adj Vref Vref=2.7V Vref=2.7V (Low-Power) (Mid-Power) Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +25°C Gain vs Output Power (Pout ≤≤≤≤+28 dBm) at +25°C (Digital Control) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 Output Power (dBm) Gain (dB) Vref=2.7V Adj Vref Vref=2.7V Vref=1.7V Vref=2.0V (Mid-Power) (High-Power)(Low-Power) Vref=2.7V Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +25°C Figure 21 Figure 22 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 16 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION ACPR vs Output Power (Pout ≤≤≤≤+28 dBm) at +25°C (Digital Control) -75.00 -72.50 -70.00 -67.50 -65.00 -62.50 -60.00 -57.50 -55.00 -52.50 -50.00 -47.50 -45.00 Output Power (dBm) ACPR1 at +/-1.25 MHz Offset (dBc) Vref=2.7V Adj Vref Vref=2.0VVref=1.7V Vref=2.7V Vref=2.7V (Low-Power) (Mid-Power) (High-Power) Tested at: /G75Vcc=3.5V /G75F=1880 MHz /G75Tc = +25°C Noise Figure vs Frequency (3 Devices) 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 1830 1850 1870 1890 1910 1930 1950 1970 1990 2010 Frequency (MHz) Noise Figure (dB) Unit 1_2.7V Unit 2_2.7V Unit 3_2.7V Tested at: /G75Vcc=3.5V /G75Vref = 2.7 /G75Tc = +25°C Figure 23 Figure 24 RMPA1951-102 3V PCS CDMA Power Amplifier Module

Andover, MA 01810 Revised August 27, 2001 Page 17 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION D&L Technical Sales 6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. dlarizona@aol.com Hi-Peak Technical Sales P.O. Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi–peak.com North America Spartech South

2115 Palm Bay Road, NE,

Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris jim@spartech-south.com TEQ Sales, Inc.

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Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper dculpepper@teqsales.com Cantec Representatives 8 Strathearn Ave, No. 18 Brampton, Ontario Canada L6T 4L9 905-791-5922 fax: 905-791-7940 Dave Batten cantec-ott@cantec-o.net Sangus OY Lunkintie 21,

90460 Oulunsalo

fax: 358-8-8251-110 Juha Virtala juha.virtala@sangus.fi ITX Corporation 2–5, Kasumigaseki 3–Chome Chiyoda–Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx–corp.co.jp MTI Engineering Ltd. Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg adi_p@mti-group.co.il Sirces srl Via C. Boncompagni, 3B

20139 Milano

fax: 3902-57409243 Nicola Iacovino nicola.iacovino@sirces.it Sea Union 9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su murphy@seaunionweb.com.tw Globes Elektronik & Co. Klarastrabe 12

74072 Heilbronn

fax: 49-7131-7810-20 Ulrich Blievernicht hfwelt@globes.de Headquarters

6321 San Ignacio Drive

San Jose, CA 95119 408-360-4073 fax: 408-281-8802 Art Herbig art.herbig@avnet.com Belgium and Luxembourg Cipalstraat

2440 GEEL

fax: 32 14 570679 sales.be@bfioptilas.avnet.com United States (East Coast) Raytheon Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com Sales Office Headquarters 978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.comCustomer Support Europe Raytheon AM Teckenberg 53

40883 Ratingen

fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com Asia Raytheon Room 601, Gook Je Ctr. Bldg

191 Hangang Ro 2-GA

Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com United States (West Coast) Raytheon Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com United Kingdom Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 rfsales.uk@ bfioptilas.avnet.com France

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