RMDA25000 RAYTHEON | Alldatasheet

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The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs MMIC amplifier utilizing Raytheon’s advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. Parameter Min Typ Max Unit Frequency Range GHz Gate Supply Voltage1(Vg) -0.4 V Gain Small Signal dB Gain Variation vs. Frequency +/-2 dB Power Output at 1 dB Compression dBm Power Output Saturated: (Pin=-5 dBm) dBm Parameter Min Typ Max Unit Drain Current at Pin=-5 dBm 250 mA Drain Current at P1 dB Compression 270 mA Power Added Efficiency (PAE): at P1dB OIP3 dBm Input Return Loss dB Output Return Loss dB Absolute Maximum Ratings Parameter Symbol Value Unit Positive DC Voltage (+5 V Typical) Vd + 6 Volts Negative DC Voltage Vg - 2 Volts Simultaneous (Vd - Vg) Vdg + 8 Volts Positive DC Current ID 360 mA RF Input Power (from 50 Ω source) PIN +10 dBm Operating Base plate Temperature TC -30 to +85 Storage Temperature Range TStg -55 to +125 Thermal Resistance Rjc °C/W (Channel to Backside) Note: Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 250 mA. Electrical Characteristics (At 25°C) 50 Ω system, Vd=+5 V, Quiescent current (Idq)=250 mA CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mils gap between the chip and the substrate material. Application Information RMDA25000 23-28 GHz Driver Amplifier MMIC

362 Lowell Street

Andover, MA 01810 Revised April 16, 2001 Page 2 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION 0.658 1.028 0.843 0.0 0.115 0.0 1.895 2.614 2.794 1.452 1.629 0.115 1.303 2.614 0.177 Figure 3 Recommended Application Schematic Circuit Diagram Figure 2 Chip Layout and Bond Pad locations. Chip size is 2.79 mm x 1.63 mm x 50 µm. Back of chip is RF and DC ground. Dimensions in mm Figure 1 Functional Block Diagram RF IN RF OUT Gate Supply Vg Ground (Back of Chip) MMIC Chip Drain Supply Vd RF IN RF OUT Drain Supply (Vd= +5 V) Gate Supply (Vg) Ground (Back of Chip) MMIC Chip 100pF 10000pF 10000pF Bond Wire Ls Bond Wire Ls 100pF 100pF 100pF 100pF 100pF RMDA25000 23-28 GHz Driver Amplifier MMIC

Andover, MA 01810 Revised April 16, 2001 Page 3 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Figure 4 Recommended Assembly Diagram Note: biased from 1 supply as shown. Vg should be biased from 1 supply. Vd (Positive) 100pF 100pF 10000pF 10000pF RF Input RF Output Alumina 50-Ohm Alumina 50-Ohm 2 mil Gap L< 0.015” (4 Places) Die-Attach 80Au/20Sn 100pF 100pF 100pF 100pF Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +5 V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq=250 mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power. (ii) Turn down and off drain voltage (Vd). (iii) Turn down and off gate bias voltage (Vg). An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below. Vg (Negative) RMDA25000 23-28 GHz Driver Amplifier MMIC

Andover, MA 01810 Revised April 16, 2001 Page 4 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Performance Data -25 -20 -15 -10 Input Power Drive (dBm) Pout (dBm) RMDA25000 Power Out Vs. Power In Frequency = 26 GHz, Bias Vd=5 V, Id=250 mA, T=25 °C Frequency (GHz) S21 Mag (dB) RMDA25000 S21 Vs. Frequency Bias Vd=5 V, Id=250 mA, T=25 °C RMDA25000 23-28 GHz Driver Amplifier MMIC

Andover, MA 01810 Revised April 16, 2001 Page 5 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Performance Data -25 -20 -15 -10 Frequency (GHz) S22 Mag (dB) RMDA25000 S22 Vs. Frequency Bias Vd=5 V, Id=250 mA, T=25 °C -25 -20 -15 -10 Frequency (GHz) S11 Mag (dB) RMDA25000 S11 Vs. Frequency Bias Vd=5 V, Id=250 mA, T=25 °C RMDA25000 23-28 GHz Driver Amplifier MMIC

Andover, MA 01810 Revised April 16, 2001 Page 6 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. ADVANCED INFORMATION Worldwide Sales Representatives D&L Technical Sales 6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. dlarizona@aol.com Hi-Peak Technical Sales P.O. Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi–peak.com North America Spartech South

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fax: 358-8-8251-110 Juha Virtala juha.virtala@sangus.fi ITX Corporation 2–5, Kasumigaseki 3–Chome Chiyoda–Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx–corp.co.jp MTI Engineering Ltd. Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg adi_p@mti-group.co.il Sirces srl Via C. Boncompagni, 3B

20139 Milano

fax: 3902-57409243 Nicola Iacovino nicola.iacovino@sirces.it Sea Union 9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su murphy@seaunionweb.com.tw Globes Elektronik & Co. Klarastrabe 12

74072 Heilbronn

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2440 GEEL

fax: 32 14 570679 sales.be@bfioptilas.avnet.com United States (East Coast) Raytheon Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com Sales Office Headquarters 978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com Customer Support Europe Raytheon AM Teckenberg 53

40883 Ratingen

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Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com United States (West Coast) Raytheon Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com United Kingdom Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 rfsales.uk@ bfioptilas.avnet.com France

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