RM900DB-90S MITSUBISHI | Alldatasheet

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MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE

  • Insulated Type
  • 2-element in a Pack
  • Copper Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers RM900DB-90S OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm High Voltage Diode Module High Voltage Diode Module CIRCUIT DIAGRAM (C) (C)K2K1 (E) (E)A2A1 LABEL E CC CM E GE C K1 K2 A2A1 6-φ7 MOUNTING HOLES 4-M8 NUTS Screwing depth min. 16.5 +1.0 038 57 ±0.25 57 ±0.25 124 ±0.25 29.5 130 61.5 140 >PPS<

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol Item Conditions Unit Ratings High Voltage Diode Module High Voltage Diode Module VRRM VRSM VR(DC) IF IFSM I2t Viso Tj Top Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature T j = 25 °C Tj = 25 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. 4500 4500 3000 900 6400 170 6000 –40 ~ +150 –40 ~ +125 –40 ~ +125 V V V A A kA V Typ Max

ELECTRICAL CHARACTERISTICS

Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1V R x 0.1Irr x dt. VRM = VRRM IF = 900 A Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Repetitive reverse current Forward voltage (Note 1) Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) mA V µs A µC J/P 4.00 3.60 0.9 900 650 0.7 I RRM VFM trr Irr Qrr Erec VR = 2250 V, IF = 900 A di/dt = –1800 A/µs Ls=100nH, Tj = 125 °C Symbol Item Min Unit

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module Min Typ Max THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit Min Typ Max MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit Rth(j-c) Rth(c-f) Junction to case (per 1/2 module) Case to Fin, λ grease = 1W/m·K D(c-f)=100µm, (per 1/2 module) K/kW K/kW Thermal resistance Contact thermal resistance 20.0 16.0 Mt Ms m CTI D a Ds LP CE RCC’+EE’ M8: Main terminals screw M6: Mounting screw Tc = 25 °C N·m N·m kg mm mm nH mΩ Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance 13.0 6.0 1.5 0.25 7.0 3.0 600 19.5 PERFORMANCE CURVES REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FORWARD CHARACTERISTICS (TYPICAL) FORWARD VOLTAGE VF (V) FORWARD CURRENT I F (A) Tj = 25°C Tj = 125°C 024680 1800 1600 1200 800 1400 1000 600 400 200 0 500 1000 1500 2000 1.2 0.8 0.4 1.0 0.6 0.2 FORWARD CURRENT IF (A) REVERSE RECOVERY ENERGY Erec (J/p) VR = 2250V, di/dt = 1800A/µs Tj = 125°C, LS = 100nH

FORWARD CURRENT IF (A) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.0 1.2 TIME (s) 103 104 102 101 101 102 100 10-1 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) 103102 23 5 7 10423 544 7 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE VOLTAGE VR (V) 0 1000 2000 4000 3000 50000 500 1500 1000 2000 2500 VR ≤ 3000V, di/dt ≤ 2600A/µs Tj = 125°C VR = 2250V, di/dt = 1800A/µs Tj = 125°C, LS = 100nH Irr trr Rth(j–c) = 20K/kW MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module ZRth( j –c ) ( t ) = Σ n i=1 i 1–exp ti – t    Ri [K/kW] τi [sec] 0.0059 0.0002 0.0978 0.0074 0.6571 0.0732 0.2392 0.4488