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December 2012 HVM-2026-B.doc < HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM800DG-90F  2-element in a Pack  High insulated Type  Soft Recovery Diode  AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

< HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULA TED TYPE High Voltage Diode Modules December 2012 HVM-2026-B.doc MAXIMUM RATINGS Symbol Item Conditions Ratings Unit Tj = −40…+125°C 4500 VRRM Repetitive peak reverse voltage Tj = −50°C 4400 V IF Forward current DC, T c = 65°C 800 A IFSM Surge forward current 6.5 kA t Surge current load integral Tj_start = 125°C, tp = 10 ms, Half-sine wave, VR = 0 V 211 kA 2s Ptot Maximum power dissipation T c = 25°C 4160 W Viso Isolation voltage RMS, sinusoidal, f = 60 Hz, t = 1 min. 10200 V Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60 Hz, Q PD ≤ 10 pC 3500 V Tj Junction temperature −50 ~ +150 °C Tjop Operating junction temperature −50 ~ +125 °C Tstg Storage temperature −55 ~ +125 °C

ELECTRICAL CHARACTERISTICS

Limits Symbol Item Conditions Min Typ Max Unit Tj = 25°C — — 1.0 IRRM Repetitive reverse current V RM = VRRM Tj = 125°C — 3.0 — mA Tj = 25°C — 2.55 — VFM Forward voltage IF = 800 A Tj = 125°C — 2.85 3.45 V Tj = 25°C — 0.70 — trr Reverse recovery time Tj = 125°C — 0.90 — µs Tj = 25°C — 700 — Irr Reverse recovery current Tj = 125°C — 760 — A Tj = 25°C — 660 — Qrr Revers0He recovery charge Tj = 125°C — 1040 — µC Tj = 25°C — 0.96 — Erec(10%) Reverse recovery energy (Note 1) Tj = 125°C — 1.50 — J Tj = 25°C — 1.10 — Erec Reverse recovery energy VCC = 2800 V IF = 800 A −di/dt = 2600 A/µs @ Tj = 25°C −di/dt = 2400 A/µs @ Tj = 125°C L s = 150 nH Inductive load Tj = 125°C — 1.70 — J THERMAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Rth(j-c) Thermal resistance Junction to Case (per 1/2 module) — — 30.0 K/kW Rth(c-s) Contact thermal resistance Case to heat sink, grease = 1 W/m·k D(c-s) = 100 µm (per 1/2 module) — 24.0 — K/kW MECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Mt M8 : Main terminals screw 7.0 — 22.0 N·m Ms Mounting torque M6 : Mounting screw 3.0 — 6.0 N·m m Mass — 1.0 — kg CTI Comparative tracking index 600 — — — da Clearance 26.0 — — mm ds Creepage distance 56.0 — — mm LP AK Parasitic stray inductance — 22.0 — nH RAA’+KK’ Internal lead resistance Tc = 25°C — 0.14 — m Ω Note 1. E rec(10%) are the integral of 0.1VR x 0.1IF x dt. Note 2. Definition of all items is according to IEC 60747, unless otherwise specified.

< HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULA TED TYPE High Voltage Diode Modules December 2012 HVM-2026-B.doc PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) 400 800 1200 1600 012345 Forward Voltage [V] Forward Current [A] Tj = 25°C Tj = 125°C REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.1 100 100 1000 10000 Forward Current [A] Reverse Recovery Time [µs] 100 1000 10000 Reverse Recovery Current [A] trr Irr VCC = 2800V -di/dt = 2400 A/µs @125°C LS = 150nH, Tj = 125°C Inductive load REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 0 400 800 1200 1600 Forward Current [A] Reverse Recovery Energy [J] Erec VCC = 2800V -di/dt = 2400 A/µs @125°C LS = 150nH, Tj = 125°C Inductive load REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 800 1600 2400 3200 0 1000 2000 3000 4000 5000 Reverse Voltage [V] Reverse Recovery Current [A] VCC  3200V, -di/dt < 4kA/µs Tj = 125°C

< HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULA TED TYPE High Voltage Diode Modules December 2012 HVM-2026-B.doc PERFORMANCE CURVES TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.2 0.001 0.01 0.1 1 10 Time [s] Normalized Transient Thermal impedance Rt h(j-c) = 30.0K/kW    exp 1R Z i tn 1 i i) c j ( th) t (  1 2 3 4 Ri [K/kW] 0.0055 0.2360 0.4680 0.2905 ti [sec] 0.0001 0.0131 0.0878 0.6247

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