RM600DG-130S MITSUBISHI | Alldatasheet
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MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPE
- High Insulated Type
- 2-element in a Pack
- AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers RM600DG-130S OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm High Voltage Diode Module High Voltage Diode Module (K) (K)24 (A) (A)13 CIRCUIT DIAGRAM 3 1 6-φ7 MOUNTING HOLES Screwing depth min. 16.5 4-M8 NUTS+1.0 048 130 ±0.5 57 ±0.25 57 ±0.25 17 ±0.1 44 ±0.3 22 ±0.3 124 ±0.25 140 ±0.5 16.5 ±0.3 5 ±0.15 40.4 ±0.5 61.2 ±0.5 34.4 ±0.5 >PET+PBT<
MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol Item Conditions Unit Ratings High Voltage Diode Module High Voltage Diode Module Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Tj = –40 °C Tj = +25 °C Tj = +125 °C Tj = –40 °C Tj = +25 °C Tj = +125 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. RMS sinusoidal, 60Hz, QPD ≤ 10PC 5800 6300 6500 5800 6300 6500 4500 600 4800 10200 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 V V V A A kA2s V V VRRM VRSM VR(DC) IF IFSM I2t Viso Ve Tj Top Tstg Min Typ Max
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1V R x 0.1Irr x dt. VRM = VRRM IF = 600 A Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Repetitive reverse current Forward voltage (Note 1) Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) mA V µs A µC J/P 4.00 3.60 1.0 1250 900 2.0 I RRM VFM trr Irr Qrr Erec VR = 3600 V, IF = 600 A di/dt = –2000 A/µs Ls=100nH, Tj = 125 °C
MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module Min Typ Max THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit Min Typ Max MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit Rth(j-c) Rth(c-f) Junction to case (per 1/2 module) Case to Fin, λ grease = 1W/m·K D(c-f)=100µm, (per 1/2 module) K/kW K/kW Thermal resistance Contact thermal resistance 22.0 16.0 Mt Ms m CTI D a Ds LP CE RCC’+EE’ M8: Main terminals screw M6: Mounting screw Tc = 25 °C N·m N·m kg mm mm nH mΩ Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance 15.0 6.0 1.0 0.27 7.0 3.0 600 PERFORMANCE CURVES FORWARD CURRENT IF (A) FORWARD VOLTAGE VF (V) FORWARD CURRENT I F (A) REVERSE RECOVERY ENERGY Erec (J/p) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) Tj = 25°C Tj = 125°C 200 400 600 800 1000 1200 01234567 FORWARD CHARACTERISTICS (TYPICAL) 80 200 400 600 800 1000 1200 14000 0.5 1.0 1.5 2.0 2.5 3.0 VR = 3600V, di/dt = 2000A/µs Tj = 125°C, LS = 100nH
REVERSE RECOVERY TIME trr (µs)NORMALIZED TRANSIENT THERMAL IMPEDANCE FORWARD CURRENT IF (A) REVERSE VOLTAGE V R (V) REVERSE RECOVERY CURRENT Irr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE RECOVERY CURRENT Irr (A) TIME (s) REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.2 0.4 0.6 0.8 1.0 1.2 500 1000 1500 0 2000 4000 6000 8000 103 104 102 101 101 102 100 10-1 102101 103 104 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 23 5 7 23 5 7 23 5 7 VR ≤ 4500V, di/dt ≤ 3000A/µs Tj = 125°C VR = 3600V, di/dt = 2000A/µs Tj = 125°C, LS = 100nH trr Irr Rth(j–c) = 22K/kW MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module ZRth( j –c ) ( t ) = Σ n i=1 i 1–exp ti – t Ri [K/kW] τi [sec] 0.0059 0.0002 0.0978 0.0074 0.6571 0.0732 0.2392 0.4488