RM400DY-66S MITSUBISHI | Alldatasheet

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Mar. 2003 MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION 3-level inverters, 3-level converters, DC choppers. RM400DY-66S OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm G Insulated type G 2-elements in a pack HVDi (High Voltage Diode) Module (C) (C)(E) (E) CIRCUIT DIAGRAM K1A1 LABEL 4-M8 NUTS C EE C GEC K1 K2 A1 A2 57 ± 0.25 57 ± 0.25 124 ± 0.25 140 130 114 61.5 15 6-φ7 MOUNTING HOLES

Mar. 2003 3300 3300 2200 MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C) Voltage class VRRM VRSM VR(DC) Symbol Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Item V V V Unit A A A2s V N · m N · m kg IDC IFSM I2t Tj Tstg Viso Output DC current Surge forward current I2t for fusing Junction temperature Storage temperature Isolation Voltage Mounting torque Mass TC =25°C 1 cycle of half wave 60Hz, peak value, non-repetitive, Tj = 25°C start, VRM = 0V Value of one cycle surge current, tW = 8.3ms, Tj = 25°C start Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Typical value 400 3200 4.27 ✕ 104 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 1.5 Symbol Item Conditions Unit Ratings 3.50 100 0.036 mA V µs µC K/W K/W Repetitive reverse current Forward voltage Reverse recovery time Reverse recovery charge Termal resistance Contact thermal resistance I RRM VFM trr Q rr R th(j-c) R th(c-f) VRRM applied, VRM = VRRM IFM = 400A IFM = 400A, dif/dt = –800A/µs, VR = 1650V Junction to case (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) Min Typ MaxSymbol Item Conditions Limits Unit ELECTRICAL CHARACTERISTICS (Tj = 25°C) 4.55 1.20 0.072 HVDi (High Voltage Diode) Module

Mar. 2003 MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S HIGH POWER SWITCHING USE INSULATED TYPEHVDi (High Voltage Diode) Module FORWARD CURRENT (A) 300 200 100 10000 200 400 800 600 VCC = 1650V, diF/dt = –800A/µs Tj = 25°C Inductive load Integrated over range of 10% 012345 103 FORWARD CURRENT (A) FORWARD VOLTAGE (V) MAXIMUM FORWARD CHARACTERISTIC

2 Tj = 25°C

10–2 10–3 10–2 10–1 100 10–1 100 101 23 57 23 57 23 57 TIME (s) Single Pulse TC = 25°C R th(j – c) = 0.072K/W Zth(j – c) (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE ) Q rr (µC) REVERSE RECOVERY CHARACTERISTICS VS. FORWARD CURRENT (TYPICAL ) –di/dt (A/µs) Q rr (µC) REVERSE RECOVERY CHARACTERISTICS VS. –di/dt (TYPICAL ) 0 500 1000 1500 2000 25000 100 200 300 400 500 VCC = 1650V IF = 400A PERFORMANCE CURVES