RM400DG-66S MITSUBISHI | Alldatasheet
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MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPE
- High Insulated Type
- 2-element in a Pack
- AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers RM400DG-66S OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm High Voltage Diode Module High Voltage Diode Module (K) (K)24 (A) (A)13 CIRCUIT DIAGRAM 3 1 6-φ7 MOUNTING HOLES Screwing depth min. 16.5 4-M8 NUTS+1.0 048 130 ±0.5 57 ±0.25 57 ±0.25 17 ±0.1 44 ±0.3 22 ±0.3 124 ±0.25 140 ±0.5 16.5 ±0.3 5 ±0.15 40.4 ±0.5 61.2 ±0.5 34.4 ±0.5 >PET+PBT<
MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol Item Conditions Unit Ratings High Voltage Diode Module High Voltage Diode Module Typ Max
ELECTRICAL CHARACTERISTICS
Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1V R x 0.1Irr x dt. VRM = VRRM IF = 400 A Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Repetitive reverse current Forward voltage (Note 1) Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) mA V µs A µC J/P 2.80 2.70 1.0 530 270 0.3 I RRM VFM trr Irr Qrr Erec VR = 1650 V, IF = 400 A di/dt = –1350 A/µs Ls=100nH, Tj = 125 °C Symbol Item Min Unit VRRM VRSM VR(DC) IF IFSM I2t Viso Ve Tj Top Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Tj = 25 °C Tj = 25 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. RMS sinusoidal, 60Hz, QPD ≤ 10PC 3300 3300 2200 400 3200 42.7 10200 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 V V V A A kA V V
MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module Min Typ Max THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit Min Typ Max MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit Rth(j-c) Rth(c-f) Junction to case (per 1/2 module) Case to Fin, λ grease = 1W/m·K D(c-f)=100µm, (per 1/2 module) K/kW K/kW Thermal resistance Contact thermal resistance 54.0 48.0 Mt Ms m CTI D a Ds LP CE RCC’+EE’ M8: Main terminals screw M6: Mounting screw Tc = 25 °C N·m N·m kg mm mm nH mΩ Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance 15.0 6.0 1.0 0.27 7.0 3.0 600 PERFORMANCE CURVES REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FORWARD CHARACTERISTICS (TYPICAL) FORWARD VOLTAGE VF (V) FORWARD CURRENT I F (A) Tj = 25°C Tj = 125°C 800 600 400 200 0246 135 0 0.5 0.3 0.1 0.4 0.2 0 200 600 400 800 1000 FORWARD CURRENT IF (A) REVERSE RECOVERY ENERGY Erec (J/p) VR = 1650V, di/dt = 1350A/µs Tj = 125°C, LS = 100nH
FORWARD CURRENT IF (A) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.0 1.2 TIME (s) 103 104 102 101 101 102 100 10-1 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) 102101 23 5 7 10323 544 7 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE VOLTAGE VR (V) 0 1000 2000 3000 40000 200 600 400 800 1000 Rth(j–c) = 18K/kW VR ≤ 2200V, di/dt ≤ 1800A/µs Tj = 125°C VR = 1650V, di/dt = 1350A/µs Tj = 125°C, LS = 100nH Irr trr MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module ZRth( j –c ) ( t ) = Σ n i=1 i 1–exp ti – t Ri [K/kW] τi [sec] 0.0059 0.0002 0.0978 0.0074 0.6571 0.0732 0.2392 0.4488