RM25TN-2H MITSUBISHI | Alldatasheet
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Sep.1998 Dimensions Inches Millimeters A 2.83 71.8 B 1.18 30.0 C 0.35 9.0 D 2.55 64.8 E 0.59 15.0 F 0.54 13.7 G 2.32 58.8 H 2.21 56.2 J 0.48 12.08 K 0.40 10.16 L 1.60 40.64 M 0.05 1.20 Dimensions Inches Millimeters N 0.16 4.0 P 0.02 0.6 Q 0.55 14.0 R 0.20 5.0 S 0.35 9.0 T 0.14 3.5 U 0.45 11.5 V 0.71 18.0 W 0.06 1.5 X 0.16 4.0 Y 0.16 4.0 Z 0.08 2.0 Description: Mitsubishi Three-Phase Diode Bridge Modules are designed for use in applications requiring rectifi- cation of three-phase AC lines into DC voltage. Each module consists of six diodes and the interconnect required to form a complete three- phase bridge circuit. Each diode is electrically insulated from the mounting base plate for easy mounting on a common heatsink with other components. Features: u Isolated Mounting u Metal Base Plate u Low Thermal Impedance Applications: u Motor Control u Inverters u UPS Ordering Information: RM25TN-2H Outline Drawing and Circuit Diagram RM25TN-2H TYP~~ ~ + - Z A B S D E G H K J L N P F R Q C T U V W M R "Y" φ"X" ~~~- +
Sep.1998 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol RM25TN-2H Units Repetitive Peak Reverse Voltage V RRM 1600 Volts Non-Repetitive Peak Reverse Voltage V RSM 1700 Volts Recommended AC Input Voltage E A 440 Volts DC Output Current (Tb = 100°C) I O 25 Amperes Surge (Non-Repetitive) Forward Current (One Half Cycle at 60Hz, Peak Value) IFSM 400 Amperes I2t for Fusing (Value for One Cycle of Surge Current) I 2t 667 A 2sec Junction Temperature Tj -40 ~ +125 °C Storage Temperature Tstg -40 ~ +125 °C Operating Frequency f 1000 Hz Maximum Mounting Torque M3.5 Mounting Screw – 0.78 ~ 0.98 N · m Maximum Mounting Torque M3.5 Terminal Screw – 0.78 ~ 0.98 N · m Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms Electrical and Thermal Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Reverse Current I RRM Tj = 125°C, VRRM = Rated – – 8.0 mA Forward Voltage Drop V FM Tj = 25°C, IFM = 25A, – – 1.5 Volts Instantaneous Meaurement Thermal Resistance R th(j-b) Junction to Base Plate – - 2.0 °C/ W Thermal Resistance R th(b-f) Base to Fin, Thermal Grease Applied – – 0.3 °C/W Isolation Resistance At 500V DC 10 – – M Ω Between Terminal and Base Plate RM25TN-2H DC OUTPUT CURRENT, I o, (AMPERES) BASE PLATE TEMPERATURE , Tb, (°C) ALLOWABLE DC OUTPUT CURRENT VS. BASE PLATE TEMPERATURE 120 100 01 0 2 0 30 40