RM1500HE-66F MITSUBISHI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
June 2013 HVM-2028-A.doc < HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM15 00HE-66F 1-element in a Pack Insulated Type Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
< HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules June 2013 HVM-2028-A.doc MAXIMUM RATINGS Symbol Item Conditions Ratings Unit Tj = −40 … +150°C 3300 VRRM Repetitive peak reverse voltage Tj = −50°C 3200 V Tj = −40 … +150°C 3300 VRSM Non-repetitive peak reverse voltage Tj = −50°C 3200 V IF DC, Tc = 75°C 1500 A IFRM Forward current Pulse (Note 1) 3000 A IFSM Surge (non-repetitive) forward current 12000 A I t Surge current load integral Tj_start = 25°C, tp = 8.3 ms, Half-sine wave, VR = 0 V 598 kA s Viso Isolation voltage RMS, sinusoidal, f = 60 Hz, t = 1 min. 6000 V Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60 Hz, QPD ≤ 10 pC 2400 V Tj Junction temperature −50 ~ +150 °C Tjop Operating junction temperature −50 ~ +150 °C Tstg Storage temperature −55 ~ +150 °C
ELECTRICAL CHARACTERISTICS
Limits Symbol Item Conditions Min Typ Max Unit Tj = 25°C — — 5.0 IRRM Repetitive reverse current VRM = VRRM Tj = 150°C — 12.0 — mA Tj = 25°C — 2.60 3.20VFM Forward voltage IF = 1500 A (Note 2) Tj = 150°C — 2.70 — V Tj = 25°C — — — trr Reverse recovery time Tj = 150°C — 0.9 — µs Tj = 25°C — — — Qrr Reverse recovery charge Tj = 150°C — 1300 — µC Tj = 25°C — — — Erec Reverse recovery energy (Note 3) VCC = 1500 V IF = 1500 A Ls = 100 nH −diF/dt = 4400 A/µs @ Tj = 150°C Inductive load Tj = 150°C — 1.35 — J THERMAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Rth(j-c) Thermal resistance Junction to Case — — 14.5 K/kW Rth(c-s) Contact thermal resistance Case to heat sink, grease = 1 W/m·k D(c-s) = 100 µm — 15.0 — K/kW MECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Mt M8 : Main terminals screw 6.7 — 10.8 N·m Ms Mounting torque M6 : Mounting screw 2.9 — 3.4 N·m m Mass — 0.66 — kg CTI Comparative tracking index 600 — — — da Clearance 19.5 — — mm ds Creepage distance 32.0 — — mm LP AK Parasitic stray inductance — 17.0 — nH RAA’+KK’ Internal lead resistance Tc = 25°C — 0.16 — m Ω Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (150°C). Note 2. Pulse width and repetition rate should be such as to cause negligible temperature rise. Note 3. Erec is the integral of 0.1VR x 0.1IF x dt.
< HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules June 2013 HVM-2028-A.doc PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) 500 1000 1500 2000 2500 3000 0123 Forward Voltage [V] Forward Current [A] Tj = 150°C Tj = 25°C REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.0 0.5 1.0 1.5 2.0 2.5 0 2000 4000 6000 8000 Current Slope [A/µs] Reverse Recovery Energies [J] VCC = 1500V, LS = 100nH Tj = 150°C, Inductive load REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 0.0 0.4 0.8 1.2 1.6 2.0 0 500 1000 1500 2000 2500 3000 Forward Current [A] Reverse Recovery Energies [J] VCC = 1500V, LS = 100nH Tj = 150 °C , Inductive load REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.1 100 10 100 1000 10000 Forward Current [A] Reverse Recovery Time [µs] 100 1000 10000 Reverse Recovery Current [A] trr Irr VCC = 1500V, LS = 100nH Tj = 150°C, Inductive load
< HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules June 2013 HVM-2028-A.doc PERFORMANCE CURVES REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 3000 Reverse Voltage [V] Reverse Recovery Current [A] VCC 2500V, di/dt < 6.8kA/µs Tj = 150°C, Ls = 100nH TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.2 0.001 0.01 0.1 1 10 Time [s] Normalized Transient Thermal impedance Rt h(j-c) = 14.5K/kW exp 1R Z i tn 1 i i) c j ( th) t ( 1 2 3 4 Ri [K/kW] 0.0096 0.1893 0.4044 0.3967 i [sec] 0.0001 0.0058 0.0602 0.3512
< HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules June 2013 HVM-2028-A.doc Notes regarding these materials ・ These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not c onvey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. ・ Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ・ All information contained in these materials, incl uding product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubish i Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. ・ Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/ ・ When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. ・ Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purpos es, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ・ The prior written approval of Mitsubishi Electric Corporat ion is necessary to reprint or reproduce in whole or in part these materials. ・ If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese governm ent and cannot be imported in to a country other than the approved destination. ・ Any diversion or re-export contrary to the export contro l laws and regulations of Japan and/or the country of destination is prohibited. ・ Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placem ent of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. © 2013 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.