RM1200HE-66S MITSUBISHI | Alldatasheet

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MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S HIGH POWER SWITCHING USE INSULATED TYPE

  • Insulated Type
  • 1-element in a Pack
  • AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers RM1200HE-66S OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm High Voltage Diode Module High Voltage Diode Module CIRCUIT DIAGRAM KK AA LABEL K A K A 4-φ6.5 MOUNTING HOLES 4-M8 NUTS +1.0 038 (15) 114 ±0.3 130 ±1.0 20.5 61.5 ±0.5 (15) 40 ±0.5 (15) 74 ±0.3 90 ±1.0 9.3 39.5 125.5 29.7 85.5 >PPS<

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol Item Conditions Unit Ratings High Voltage Diode Module High Voltage Diode Module Typ Max

ELECTRICAL CHARACTERISTICS

Symbol Item Conditions Limits Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1V R x 0.1Irr x dt. Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature T j = 25 °C Tj = 25 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. 3300 3300 2200 1200 9600 384 6000 –40 ~ +150 –40 ~ +125 –40 ~ +125 V V V A A kA V VRRM VRSM VR(DC) IF IFSM I2t Viso Tj Top Tstg mA V µs A µC J/P VRM = VRRM IF = 1200 A Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Repetitive reverse current Forward voltage (Note 1) Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) 3.77 1.4 3.20 3.10 1400 900 0.85 I RRM VFM trr Irr Qrr Erec VR = 1650 V, IF = 1200 A di/dt = –3500 A/µs Ls=100nH, Tj = 125 °C Min Unit

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module Min Typ Max THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit Rth(j-c) Rth(c-f) Junction to case Case to Fin, λgrease = 1W/m·K D(c-f)=100µm K/kW K/kW Thermal resistance Contact thermal resistance 20.0 15.0 Min Typ Max MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit Mt Ms m M8: Main terminals screw M6: Mounting screw N·m N·m kg Mounting torque Mass 13.0 6.0 0.66 6.67 2.84 PERFORMANCE CURVES REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FORWARD CHARACTERISTICS (TYPICAL) FORWARD VOLTAGE VF (V) FORWARD CURRENT I F (A) Tj = 25°C Tj = 125°C 0246 13 50 500 15001000 2000 25000 2500 1500 2000 1000 500 1.4 0.8 0.2 1.2 0.6 1.0 0.4 FORWARD CURRENT IF (A) REVERSE RECOVERY ENERGY Erec (J/p) VR = 1650V, Tj = 125°C LS = 100nH

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module FORWARD CURRENT IF (A) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 104 102 101 101 102 100 10-1 REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) 103102 23 5 7 10423 544 7 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE TIME (s) 0.2 0.4 0.6 0.8 1.0 1.2 10-3 10210110010-110-2 23 5 723 5 723 5 723 5 723 5 7 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE VOLTAGE VR (V) 1000 2000 1500 500 2500 3000 0 500 1000 3000 2000 25001500 3500 VR ≤ 2200V, di/dt ≤ 5300A/µs Tj = 125°C VR = 1650V, Tj = 125°C LS = 100nH Irr trr Rth(j–c) = 20K/kW