RM1200DB-34S MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DB-34S HIGH POWER SWITCHING USE INSULATED TYPE

  • Insulated Type
  • 2-element in a Pack
  • Copper Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers RM1200DB-34S OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm High Voltage Diode Module High Voltage Diode Module CIRCUIT DIAGRAM (A1) (K2)24 (K1) (A2)13 LABEL 6-φ7 MOUNTING HOLES 4-M8 NUTS Screwing depth min. 16.5 +1.0 038 130 ±0.5 57 ±0.25 57 ±0.25 20 ±0.1 30 ±0.2 124 ±0.25 140 ±0.5 11.85 ±0.2 5 ±0.2 55.2 ±0.3 5 ±0.2 29.5 ±0.5 >PET+PBT<

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DB-34S HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol Item Conditions Unit Ratings High Voltage Diode Module High Voltage Diode Module VRRM VRSM VR(DC) IF IFSM I2t Viso Tj Top Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature T j = 25 °C Tj = 25 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. 1700 1700 1200 1200 20800 1803 4000 –40 ~ +150 –40 ~ +125 –40 ~ +125 V V V A A kA V Typ Max

ELECTRICAL CHARACTERISTICS

Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1V R x 0.1Irr x dt. VRM = VRRM IF = 1200 A Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Repetitive reverse current Forward voltage (Note 1) Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) mA V µs A µC J/P 2.10 1.75 0.85 800 420 0.3 I RRM VFM trr Irr Qrr Erec VR = 850 V, IF = 1200 A di/dt = –3000 A/µs Ls=150nH, Tj = 125 °C Symbol Item Min Unit

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DB-34S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module Min Typ Max THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit Min Typ Max MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit Rth(j-c) Rth(c-f) Junction to case (per 1/2 module) Case to Fin, λ grease = 1W/m·K D(c-f)=100µm, (per 1/2 module) K/kW K/kW Thermal resistance Contact thermal resistance 20.0 24.0 Mt Ms m CTI D a Ds LP CE RCC’+EE’ M8: Main terminals screw M6: Mounting screw Tc = 25 °C N·m N·m kg mm mm nH mΩ Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance 20.0 6.0 1.35 0.2 7.0 3.0 600 9.5 PERFORMANCE CURVES REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FORWARD CHARACTERISTICS (TYPICAL) FORWARD VOLTAGE VF (V) FORWARD CURRENT I F (A) Tj = 25°C Tj = 125°C 024 130 2500 2000 1000 1500 500 0.5 0.3 0.4 0.2 0.1 0 500 1000 2000 1500 2500 FORWARD CURRENT IF (A) REVERSE RECOVERY ENERGY Erec (J/p) VR = 850V, di/dt = 3000A/µs Tj = 125°C, LS = 150nH

FORWARD CURRENT IF (A) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.0 1.2 TIME (s) 103 104 102 101 101 102 100 10-1 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) 103102 23 5 7 10423 544 7 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE VOLTAGE VR (V) 1000 2000 1500 500 2500 3000 0 500 1500 1000 2000 VR ≤ 1200V, di/dt ≤ 3700A/µs Tj = 125°C Irr trr Rth(j–c) = 20K/kW VR = 850V, di/dt = 3000A/µs Tj = 125°C, LS = 150nH MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DB-34S HIGH POWER SWITCHING USE INSULATED TYPEHigh Voltage Diode Module High Voltage Diode Module ZRth( j –c ) ( t ) = Σ n i=1 i 1–exp ti – t    Ri [K/kW] τi [sec] 0.0059 0.0002 0.0978 0.0074 0.6571 0.0732 0.2392 0.4488