RLGB15N60CT GWSEMI | Alldatasheet

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Features

 600V,15A  VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square RBSOA General Description trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter Value Units VCES Col lector-Emitter Voltage 600 V VGES G ate-Emitter Voltage + 30 V IC Continuous Collector Current ( TC=25 ) 30 A Continuous Collector Current ( TC=100 ) 15 A ICM Pulsed Collector Current (Note 1) 45 A IF Di ode Continuous Forward Current ( TC=100 ) 15 A IFM Di ode Maximum Forward Current (Note 1) 45 A tsc S hort Circuit Withstand Time 10 us PD Maximum Power Dissipation ( TC=25 ) 105 W Maximum Power Dissipation ( TC=100 ) 42 W TJ O perating Junction Temperature Range -55 to +150 TSTG S torage Temperature Range -55 to +150 Thermal Characteristics Symbol Parameter Max. Units Rth j-c Thermal Resistance, Junction to case for IGBT 1.2 / W Rth j-c Thermal Resistance, Junction to case for Diode 1.8 / W Rth j-a Thermal Resistance, Junction to Ambient 62 / W RLGB 15N60CT IGBT

Electrical Characteristics (TC=25 unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BV CES Collector-Emitter Breakdown Voltage V GE = 0V, I C = 250uA 600 V I CES Collector -Emitter Leakage Current V CE = 600V, V GE = 0V 100 uA I GES Gate Leakage Current, Forward V GE =30V, V CE = 0V 100 nA Gate Leakage Current, Reverse V GE = -30V, V CE = 0V -100 nA V GE(th) Gate Threshold Voltage V GE = V CE I C = 250uA 4.5 6.5 V V CE(sat) Collector-Emitter Saturation Voltage V GE =15V, I C = 15A 1.75 2.2 V Q g Total Gate Charge VCC=400V VGE=15V IC=15A 37.5 nC Q ge Gate-Emitter Charge 9.5 nC Q gc Gate-Collector Charge 20.5 nC t d(on) Turn-on Delay Time VCC=400V VGE=15V IC=15A RG=22 Inductive Load 3.73mH TC=25 24.7 ns t r Turn-on Rise Time ns t d(off) Turn-off Delay Time 67.3 ns t f Turn-off Fall Time 230.7 ns Eon Turn-on Switching Loss 0.36 mJ Eoff Turn-off Switching Loss 0.58 mJ Ets Total Switching Loss 0.94 mJ C ies Input Capacitance VCE=30V VGE=0V f = 1MHz 795 pF C oes Output Capacitance pF C res Reverse Transfer Capacitance pF Electrical Characteristics of Diode (TC=25 unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units V F Diode Forward Voltage I F =15A 1.45 1.9 V t r r Diode Reverse Recovery Time V CE = 300V I F = 15A dI F /dt = 500A/us - 80 ns I r r Diode peak Reverse Recovery Current - 11 A Q r r Diode Reverse Recovery Charge - 580 nC Notes： 1. Repetitive Rating: Pulse width limited by maximum junction temperature RLGB 15N60CT IGBT