RLF2N65CT GWSEMI | Alldatasheet

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Technical content

Features

 VDS=650V, ID=2A  RDS(ON)=3.6Ω@VGS=10V(Typ.)  High Power and current handing capability  Lead free product is acquired Main Applications  Battery Protection  Load Switch  Power Management RLF2N65CT N-Channel Enhancement MOSFET G S Schematic diagram ITO-220

Electrical Characteristics (TAmbient=25ºC unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 650 Volt IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V 25 μA IGSS Gate-Body Leakage Current VGS=±30V, VDS=0V ±100 nA On Characteristics(Note 3) VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 2.3 3.6 Volt RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=1A 3.6 4.5 Ω Dynamic Characteristics(Note 4) Ciss Input Capacitance VDD=25V, VGS=0V , F=1MHz 313 pF Coss Output Capacitance 31.2 pF Crss Reverse Transfer Capacitance 3.7 pF Switching Characteristics(Note 4) td(on) Turn-on Delay Time VDD=325V, ID=2A RG=25Ω 20.3 nS tr Turn-on Rise Time 145 nS td(off) Turn-Off Delay Time 33.3 nS tf Turn-Off Fall Time 11.8 nS Qg Total Gate Charge VDS=520V, ID=2A, VGS=10V 8.4 nC Qgs Gate-Source Charge 1.6 nC Qgd Gate-Drain Charge 3.1 nC Drain-Source Diode Characteristics VSD Diode Forward Voltage(Note 3) VGS=0V, IS=2A 1.4 V ISM Pulse Diode Forward Current 2 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production RLF2N65CT N-Channel Enhancement MOSFET

Typical Electrical and Thermal Characteristics RLF2N65CT N-Channel Enhancement MOSFET

RLF2N65CT N-Channel Enhancement MOSFET

RLF2N65CT N-Channel Enhancement MOSFET

RLF2N65CT N-Channel Enhancement MOSFET ITO-220 PACKAGE OUTLINE Min. Typ. Max.Ref. L e E D c A 6.40 9.73 15.30 15.25 0.35 0.70 2.50 2.30 4.42 12.98 9.80 2.54 7.00 10.36 16.30 16.25 0.65 1.47 0.90 3.10 2.80 5.024.70 0.80 2.76 0.50 15.75 15.87 9.30 10.30 10.16

2.54 BCS

12.48 13.48 b P 3.183.00 3.40P Q S 6.68 3.50 3.303.05 3.55 L e E D c A3 A b PP Q