RLF12N65CT GWSEMI | Alldatasheet

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Features

 VDS=650V, ID=12A  RDS(ON)=0.64Ω@VGS=10V(Typ.)  High Power and current handing capability  Lead free product is acquired Main Applications  Battery Protection  Load Switch  Power Management TO-220I RLF12N65CT N-Channel Enhancement MOSFET G S Schematic diagram Values Values

Electrical Characteristics (T Ambient =25º C unless noted otherwise) Symbol Parameters Conditions M in. Typ. Max. Unit Off Characteristics BV DSS Drain Source Breakdown Voltage V GS =0V, I D =250μA Volt I DSS Zero Gate Voltage Drain Current V DS V, V GS =0V μ A I GSS Gate Body Leakage Current V GS V, V DS =0V n A On Characteristics(Note 3) V GS(th) Gate Threshold Voltage V DS = V GS , I D =250μA Volt R DS(ON) Drain Source On State Resistance V GS V, I D A Ω Dynamic Characteristics(Note 4) C iss Input Capacitance V D D V V GS =0V , F =1MHz pF C oss Output Capacitance pF C rss Reverse Transfer Capacitance pF Switching Characteristics(Note 4) td(on) Turn on Delay Time V DD V, I D A R G Ω nS tr Turn on Rise Time nS td(off) Turn Off Delay Time nS tf Turn Off Fall Time nS Q g To tal Gate Charge V D S V, I D A V GS V nC Q gs Gate Source Charge nC Q gd Gate Drain Charge nC Drain Source Diode Characteristics V SD Diode Forward Voltage (Note 3) V GS =0V, I S A V I SM Pulse Diode Forward Current A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production RLF12N65CT N-Channel Enhancement MOSFET

Fig.4 Body diode forward voltage variation vs Source current and Temperature Source-Drain voltage, V (V)SD Capacitance (pF) Drain-Source Voltage, V (V)DS Fig.3 On-Resistance variation vs. Drain current and Gate voltage Drain-Source On-Resistance, R (Ω)DS(ON) Drain current, l (A)D Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics Gate-Source voltage, V (V)GS Total gate charge ,Q (nC)G Reverse drain current, l (A)DR Fig.2 Transfer characteristics Gate-Source voltage, V (V)GS Drain Current,l (A)D Drain Source voltage, V (V)DS 1-10 110 010 4 62 8 Drain-Current, l (A)D 150°C 25°C -55°C Notes: 1. V =50VDS 2. 250µs pulse width V = 10VGS V = 20VGS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5 10 15 20 25 30 35 150°C 25°C 1-10 110 010 Notes: 1. V =0VGS 2. 250µs pulse Test 3000 2400 1800 1200 600 C = ( )iss C +C C = shorted gs gd ds C = C +Coss ds gs C = Crss gd Ciss Coss Crss Notes: 1. V =0VGS 2. f=1MHz -110 010 110 0 5 10 15 20 25 30 35 40 45 Fig.1 On-State characteristics 1-10 110 010 1-10 110010 V =120VDS V =300VDS V =520VDS Notes: 1. =1l 2AD Notes: 1. V =0VGS 2. 250µs pulse Test Top: VGS 15V 10V 6.5V Bottom: 5.5V Notes: 250µs pulse test T = 25°CC Typical Electrical and Thermal Characteristics RLF12N65CT N-Channel Enhancement MOSFET

Fig.7 Maximum safe operating area Drain current, l (A)D Drain-to-Source voltage, V (V)DS 10-2 010 -110 100µs 1ms 10ms 100ms Operation in This Area is Limited by RDS(ON) Note: 1. T 2. T = 25°CC = 150°CJ 3. Single Pulse Rectangular Pulse Duration, t (sec)1 D = 0.5 0.02 0.1 0.05 0.01 0.2 (Single Pulse) th(j-c) Fig.8 Transient thermal response curve Thermal response, R (t)th(j-c) Notes: 1.R (t)=2.4W Max.th(j-c) 2.Duty factor, D=t /t1 2 3.T -T =P ×R (t)JM C DM th(j-c) PDM 100 10-2 -110 10-310-5 -410 -210 -110 -010 110 110 210 010 110 210 310 DC RLF12N65CT N-Channel Enhancement MOSFET

N-Channel Enhancement MOSFET PACKAGE OUTLINE ITO-220 Min. Typ. Max. Ref. L e E D c A 6.40 9.73 15.30 15.25 0.35 0.70 2.50 2.30 4.42 12.98 9.80 2.54 7.00 10.36 16.30 16.25 0.65 1.47 0.90 3.10 2.80 5.02 4.70 0.80 2.76 0.50 15.75 15.87 9.30 10.30 10.16

2.54 BCS

12.48 13.48 b P 3.183.00 3.40 P Q S 6.68 3.50 3.303.05 3.55 L e E D c A3 A b P P Q