RFP5P15

RFP5P12 NJSEMI | Alldatasheet

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£.I±£.LI Lpioauati, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFM5P12, RFM5P15, RFP5P12, RFP5P15 P-Channel Enhancement-Mode Power Field-Effect Transistors

5 A, 120V — 150V

SOA Is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High Input Impedance Majority carrier device P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS The RFMSP12 and RFM5P15 and the RFP5P12 and RFP5P15 • are P-Channel enhancement-mode silicon gate power field-effect transistors designed forhlgh-speed applications such as switching ragulators, switching converters, relay drivers, and drivers for high-power bipolar switching transistors. The RFM-Series types are supplied In the JEDEC TO- 204AA metal package and the RFP-Serles types in the JEDEC TO-220AB plastic package. All these types are supplied without an internal gate Zener diode. RFM5P12 RFM5PI5 JEDEC TO-204AA JEDEC TO-220AB RFM5P12 RFM5P15 DRAIN-SOURCE VOLTAGE ORAIN-QATE VOLTAGE (R0, GATE-SOURCE VOLTAGE DRAIN CURRENT RMS Pulsed POWER DISSIPATION @ Tc = 25-C Derate above Tc = 25°C OPERATING AND STORAGE TEMPERATURE T,. T,« RFP5P12 RFP5P1S £ (Rgg — 1 Mil) VOOR -120 -150 PT -120 -150 0.6 0.6 0.48 0.46 . -55 to +150 - V V V A A W W/'C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

RFM5P12, RFM5P15, RFP5P12, RFP5P15 CHARACTERISTIC Drain-Source Breakdown Voltage Gate-Threshold Voltage Zero-Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junctlon-to-Case SYMBOL BVDS8 VGSHM loss loss Vostonl roSlon) g..' Ci., Co.. tdlonl tflwin It R«JC TEST CONDITIONS ID = 1 mA Vos = 0 Vos = Vos ID = 1 mA Vos = -100 V VDS = -120 V TC=125°C VDS = -W>0 V Vos = -120V Vos = ±20 V Voa = 0 ID = 2.5 A Vos =-10 V lo = 5A VGS = -10 V ID = 2,5 A VM = -10 V Vos = 10 V lo = 2.5 A Vos = 25 V Vas = 0 V f = 1MHz VDD - 1/2 BVoss ID = 2.5 A Ra.n = Rj, = 50fl Vos = 10 V RFM5P12, RFM5P15 RFP5P12. RFP5P15 LIMITS RFM5P12 RFP5P12 Mln. -120 0.75 20(typ.) 36(typ.) 63(typ.) 40(typ.l Max. 100 -2.5 700 300 100 100 150 100 1.67 2.063 RFM5P15 RFP5P15 Mln. -150 0.75 20(typ.) 36(typ.) 63(typ.) 40(typ.) Max. 100 -2.5 700 300 100 100 150 100 1.67 2.083 UNITS V V M nA V n mho PF ns "C/W

• Pulsed: Pulse duration - 300 AIS max., duty cycle - 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC Diode Forward Voltage Reverse Recovery Time SYMBOL VSD U TEST CONDITIONS Iso = 2.5A U = 4A d,F/d, - 100A/«(s LIN HFM5P12 RFPSP12 Mln. Max. 1.4 300{typ.) TS RFMSP1S RFP5P15 Min. Max. 1.4 ' 300(typ.) UNITS V ns
• Pulse 1 a,'.; Width < 300 jis, Duty Cycle < 2%.