RFP4N100 NJSEMI | Alldatasheet
Document overview
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Technical content
Features
- 4.3A, 1000V
- rDS(ON) = 3.500Q
- UIS Rating Curve (Single Pulse)
- -55°C to 150°C Operating Temperature Symbol Q D PART NUMBER RFP4N100 RF1S4N100SM PACKAGE TO-220AB TO-263AB BRAND RFP4N100 F1S4N100 G a NOTE: When ordering, use the entire part number. 6 S Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN (FLANGE) SOURCE DRAIN ,. - .-"•*'„, GATE GATE SOURCE DRAIN "(FLANGE) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
RFP4N100, RF1S4N100SM Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1 ) Drain to Gate Voltage (RQS = 20k£i) (Note 1) Pulsed Drain Current (Note 3) Gate to Source Voltage Single Pulse Avalanche Rating Maximum Power Dissipation . . Linear Derating Factor Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s Package Body for 1 0s see Techbrief 334 . RFP4N100, RF1S4N100SM VQS 1000 VnfiR 1000 ID 4.3 IOM 17 Vr<; +20 EAS (See UIS SOA Curve) (Figures 4, 14,15) PD 150 1.2
- • • TJ. TSTG ~55 to 1 50 TL 300 T_,._ ?fin CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating at device at these or any other conditions above those indicated in the operational sections of this specification is rot implied. UNITS V V A A V mJ W W/°C id operation of the NOTE: = 25°Cto125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) *d(ON) tf <d(OFF) tf Qg(TOT) R9JC RejA TEST CONDITIONS ID = 250uA, VGS = 0V (Figure 10) VGS = VDS,lD = 250nA VDS = 1000V, VGS = ov VDS = eoov, VGS = ov. Tc = 1 50°c VGS = ±2ov ID = 2.5A, VGS = 10V (Figures 8, 9) VDD = soov, ID = 3.9A, RQS = 9-m, VGS = 20V, ID = 3.9A, Vps = SOOV (Figure 13) MIN 1000 TYP MAX 100 ±100 3.500 170 120 0.83 UNITS V V MA HA nA O ns ns ns ns nC °C/W °C/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 4.3A ISD = 3.9A, dlSo'dt = 100A/US MIN TYP MAX 1.8 1000 UNITS V ns NOTES: 2. Pulse test: pulse width <, SOjis, duty cycle £ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature.