RFP2N08L NJSEMI | Alldatasheet

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, U na, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L N-Channel Logic Level Power Field-Effect Transistors (L2 FET) 1 and 2 A. 180V and 200V rem: 3,5 fl and 3,65 0 Features:

  • Design optimized lor 5 volt gale drive
  • Can {>8 driven directly from Q-MOS, N-MOS, TTL Circuits
  • Compatible with automotive drive requirements
  • SOA is power-dissipation limited
  • Nanosecond switching speeds
  • Linear transfer characteristics
  • High Input impedance
  • jWa/or/fy carrier device N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers. This performance Is accomplished through a special gate oxide design which provides full rated con- duction at gate biases In the 3-5 volt range, thereby facilitat- ing true on-off power control directly from logic circuit supply voltages. The RFL-series types are supplied in the JEDEC TO-205AF metal package and the RFP-saries types In the JEDEC TO- 220A8 plastic package. RFL1N18L RFL1N20L JEDEC TO-205AF RFP2N18L RFP2N20L JEDEC TO-220AB RFL1N18L RFL1N20U DRAIN-SOURCE VOLTAGE VOM 180 200 DRAIN-GATE VOLTAGE (fV"1 MO) .... VOCB 180 200 GATE-SOURCE VOLTAGE V0» — DRAIN CURRENT, RMS Continuous I0 1 1 Pulsed lou POWER DISSIPATION @ Te=25° C Pi 8.33 8.33 Derate above T0=25*C 0.0667 0.0667 OPERATING AND STORAGE TEMPERATURE T,. T,,, ±10 -55 to *150 RFP2N18L 180 180 0.2 RFPSN20L 200 200 0.2 V V V A A W wrc NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L ELECTRICAL CHARACTERISTICS, Al Case Temperature (TC)=2$°C unless otherwise specified. CHARACTERISTIC Drain-Source Breakdown Voltage Gate Threshold Voltage " Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction-lo-Case SYMBOL BVoos V0,(th) loss loss Voslon)' ros(on)' 9..' c,» Won) td(Off) R0« TEST CONDITIONS IDC1 mA VQ3=0 Vas=Vra I0=1 mA VM=145V VM=160V TC=125°C Vos=145V Vos=160V Vos=±10V VDS-0 ID=1 A Vos=5 V I0=2A Vos=5 V b=1 A Vos=5 V VP8=10 V lo=1 A VDS=25 V Vos=0 V f=1MHz V00=MOOV b-1 A R,.n=°° R01>$.2S 0 VQS=5V RFL1N18L, RFL1N20L RFP2N18L. RFP2N20L RFP RFL RFP RFL RFP RFL tol-t4 RFL LIMITS RFL1N18L RFP2N18L MIN. 160 800 10(typ) 10(typ) 25(lyp) 20(typ) 30(typ> MAX. 100 3.5 3.65 9.3 3.5 3.65 200 RFL1NZOL RFP2N20L MIN. 200 800 10(typ) 10(typ) 25(typ) 20(typ) 30(typ; MAX. 100 3.5 3.65 9.3 3.5 3.65 200 UNITS V V /-A nA V n mmho PF ns °C/W

  • Pulsed: Pulse duration • 300 ^s max., duty cycle » 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC Diode Forward Voltage Reverse Recovery Time SYMBOL VSD TEST CONDITIONS lso=1 A lf-2A diF/d,=60 M/JS LIMITS RFL1N18L RFP2N18L MIN. MAX. 1.4 200{typ) RFL1N20L RFP2N20L MIN. MAX. 1,4 200(typ) UNITS V ns
  • Pulse Test: Width < 300//s, duty cycle < 2%.