RFP2N08 NJSEMI | Alldatasheet
Document overview
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Technical content
Features
- 2A, 80V and 100V
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature
Description
These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Symbol
Ordering Information
NOTE: When ordering, use entire part number. Packaging JEDEC TO-220AB DRAIN (FLANGE) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified RFP2N08 RFP2N10 UNITS Maximum Temperature for Soldering CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: = 25°Cto 125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage RFP2N10 RFP2N08 Gate Threshold Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case SYMBOL BVoss VGS(TH) IDSS IGSS rDS(ON) VDS(ON) td(ON) tr 'd(OFF) tf CISS coss CRSS R6JC TEST CONDITIONS ID = 250nA, VGS = 0 VGS = VDS. ID = 250^A (Figure 8) VDS = Rated BVDSS, Tc = 25°C VDS = 0-8 x Rated BVDSS, Tc = 125°C VGS = ±20V, VDS = 0 ID = 2A, VGS = 10V (Figures 6, 7) ID = 2A,VGS = 10V ID = 1A, VDD = sov, RG = son, (Figures 10, 11, 12) VGS = 0V, VDS = 25V, f =1MHz MIN 100 TYP MAX ±100 1.05 2.1 200 UNITS V V V HA nA n V ns ns ns ns PF PF pF °C/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 2A ISD = 2A, dlSD/dt = 50A/|is MIN TYP 100 MAX 1.4 UNITS V ns NOTES: 2. Pulse test: pulse width < 300^3, duty cycle < 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature.