RFP25N05 NJSEMI | Alldatasheet

Document overview

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Technical content

Features

  • 25A,50V
  • rDS(ON) = 0.0470
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175°C Operating Temperature

Ordering Information

NOTE: When ordering use the entire part number. Packaging JEDEC TO-220AB DRAIN (FLANGE) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified Drain to Gate Voltage Gate to Source Voltage Maximum Temperature for Soldering CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. RFP25N05 ±20 Refer to Peak Current Curve Refer to UIS Curve 0.48 -55 to 175 UNITS V V V A A W w/°c NOTE: = 25°Cto150°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SYMBOL BVDSS VGS(TH) 'DSS !GSS rDS(ON) 'ON td(ON) tr 'd(OFF) tf 1OFF QG(TOT) °.G(10) QG(TH) CISS coss CRSS Rejc RejA TEST CONDITIONS ID = 250nA, VGS = 0V (Figure 1 1 ) VGS = VDS. 'D = 250mA (Figure 10) VDS = Rated BVDSS, VGS = 0V VDS = ° 8 x Rated BVDSS,TC = 150°C VGS = ±20V ID = 25A, VGS = 10V (Figure 9) VDD = 25V, ID =12. VQS- iov, RQ - 10 (Figure 13) VGS = 0V to 20V VGS = OVto 10V VGS = ov to 2V 5A, RL = 2.0Q, Q VDD = 4ov, ID - 25A, RL = 1.6JJ 'g(REF) = 0.75mA (Figure 13) VDS = 25V- VGS = ov, f= 1MHz (Figure 12) (Figure 3) WIN TYP 1075 350 100 MAX ±100 0.047 100 2.083 UNITS V V HA uA nA n ns ns ns ns ns ns nC nC nC PF PF pF °C/W °c/w Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD tRR TEST CONDITIONS ISD = 25A ISD = 25A, dlSD/dt = 100A/HS MIN TYP MAX 1.5 125 UNITS V ns NOTES: 2. Pulse test: pulse width < 300|j.s, duty cycle < 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve