RFP15N12 NJSEMI | Alldatasheet

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^s.mi-donducto'i iPioducti, Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFM15N12, RFM15N15, RFP15N12, RFP15N15 N-Channel Enhancement-Mode Power Field-Effect Transistors

15 A, 120V —150V

ro«(on): 0.15 n Features:

  • SO/A Is power-dissipation limited
  • Nanosecond switching speeds
  • Linear transfer characteristics
  • High Input Impedance
  • Ma/ority carrier device The RFM15N12 and RPM15N1S and the RFP15N12 and RFP15N15'are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from integrated circuits. The RFM-lypes are supplied in the JEDEC TO-204AA steel package and the RFP-types In the JEDEC TO-220AB plastic N-Channel Enhancement Mode TERMINAL DESIGNATIONS RFM15N12 RFM1SN15 GATE JEDEC TO-204AA RFP15N12 RFP15N15 IFLANSE)" JEDEC TO-220AB VD Vo V b DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE (Ros=1 MO) GATE-SOURCE VOLTAGE DRAIN CURRENT RMS Continuous Pulsed POWER DISSIPATION @Tc=2S'C Derate above TC-25°C OPERATING AND STORAGE TEMPERATURE TI, T., RFM15N12 120 120 RFM15N15 150 150 RFP15N12 120 120 RFP1SN16 1SO 150 V V V A A 100 0.80 100 0.80 0.6 0.6 W W/°C -55 to +1SO NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

RFM15N12, RFM15N15, RFP15N12, RFP15N15 ELECTRICAL CHARACTERISTICS At Case Temperature (Te) = 25°C unle$s otherwise specified , CHARACTERISTICS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction-to-Case SYMBOL BVDas Vasiiiu IMS loss VDs(on)' ros(on)' g,.' CiM COM td(on) Wolf) R0JC TEST CONDITIONS lo = 1 mA V<» = 0 Vos = Vos lo = 1 mA VDS = 100 V Vos = 120 V Tc = 125°C VDS - 100 V VDS = 120 V Vas = ± 20 V Vos = 0 ID = 7.5 A Vas = 10 V ID = 15 A Vas = 10 V

  • ID = 7.5 A VOS = 10V V05 = 10 V ID = 7.6 A VDS = 25 V Vas = 0 V f=1MHz VeD=75 V ID = 7.5 A Rj.n = R8. = 50 O VOB = 10 V RFM15N12, RFM15N15 RFP15N12. RFP15N15 LIMITS RFM16N12 RFP1SN12 MIN. 120 50(typ.) 1SO(typ.) 185(typ.) 126(typ.) MAX. 100 1.125 0,15 1700 750 350 225 2BO 190 1.25 1.67 RFM15N15 RFP18N15 MIN. 150 50{typ.) 150{typ.) 185(typ.) 125(typ.) MAX. 100 1.125 0,15 1700 750 350 225 260 190 1.25 1.67 UNITS V V //A nA V n mho pF ns "C/W
  • Pulsed: Pulse duration = 300 ps max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC Diode Forward Voltage Reverse Recovery Time SYMBOL VSD TEST CONDITIONS lso=7.5A IF=4A d,F/d,=100A//ffi LIMITS RFM15N12 RFP15N12 MIN. MAX. 1.4 200(typ) RFM15N15 RFP15N15 MIN. MAX. 1,4 200(typ) UNITS V ns 'Pulse Test: Width '- 300 fja, duty cycle £ 2%.