RFP12N18 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
duct6,, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFM12N18/12N20 RFP12N18/12N20 N-Channel Enhancement Mode Power Field Effect Transistors Abaolut* Maximum Ratings (Tc - DrabfSoufc* VolUg* , , , , Continuous Drain Outran! RMS Continuous PuUed Drain Current..,,, Galfr-SourcaVotta0> Maximum Power Dlulpation TC » +25OC At>Ov«Tc-+25°C,D«rataLJn«riY •• Temparaturaflanoa 260Q,Unle« .... ID inu VRS .. TJ,T8TO RFU12N1I HFU12N20 180 200 180 300 12 12 30 30 ±20 ±20 100 100 04 0* RFPIWU 180 100 ±20 Of -55 la+150 RFP1XN2O 500 ZOO ±20 0.6 -55 10*150 UNIT* V V A A V W W/»C ELECTRICAL CHARACTERISTIC*, At Cut remperefur* (r.)>25'C unlttt othwwltt tpfdllfd CHMUCTIHWTIC Drain-Source Breakdown Voltage Qate-Threthold Voltage Zero-Oite Voltage Drain Current Gilt-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Refinance Forward Tranaconductance Input Capacitance Output Capacitance Reveree-Tranafer Capacitance Turn-On Delay Time Riw Time Turn-On Delay Time Fall Time Thermal Rebalance Junction>to-Cue
- VMBOL BVwt yum lew lew V»(on)» r»(on,« """ C*. Won) U(otl) RM TUT CONDITION** lo-lmA V«-0 VH-VM lo>1 mA V»-145 V v»-ieo v Te«125'C VM-145V VM-180V V«-±20V VD.-O V^10V If 12 A VM>10V VM-10V V»-10 V V«-25V VM-OV l-IMHz Vw»100V Fio-'iv'so n Vw-10 V RFM12N18. RFM12N20 RFP12N18, RFP12N20 RFMia MP12 Hln. 180 35(typ 30(typ 20(typ 05(lyp uMr M18 N18
- ax. 100 1.6 3.6 OJ5 1700 BOO 300 SO 200 180 1(0 1.25 ur rs Mina Ma. 200 3S(lyp ^Ottyp 20(typ I05(lyp M20 Hal. SO 100 1.5 0,25 1700 600 300 200 180 160 1.25 1.67 UNIT* V V *<A nA a mho pF
- c/w NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
MHMCC-MMM MOOC MTHMS AMD CHARACTERISTICS CHAHACTERICTIC Diode Forward Voltage SYMBOL v»' u TEST COMfMTIONS I»*8A 1^4 A u,./a,-100A/^> LIMITS RFM12N1I RFP12NU HIM. MAX. 1.4 32S(typ) RFM12N30 RFP12N20 MM. MAX. 1.4 3Z5<iyp) UMTS V Packages TO-204AA SOURCE GATE TO-220AB TOP VIEW MN NGE) 1 . o Terminal Diagram N-CHANNEL ENHANCEMENT MODE