RFP12N08L NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

<z2\\E,(.\\T I , LJ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

12 A, 80V and 100V

ros(on): 0.2 n Features:

  • Design optimized tor 5 volt gate drive
  • Can be driven directly from Q-MOS, N-MOS, TTL Circuits
  • Compatible with automotive drive requirements
  • SOA is power-dissipation limited
  • Nanosecond switching speeds
  • Linear transfer characteristics
  • High input impedance
  • Ma/ority carrier device N-CHANNEL ENHANCEMENT MODE The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L' are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated con- duction at gate biases in the 3-5 volt range, thereby facilitat- ing true on-off power control directly from logic circuit supply voltages. The RFM-series types are supplied in the JEDEC TO- 204AA steel package and the RFP-series types in the JEDEC TO-220AB plastic package. Because of space limitations branding (marking) on type RFP12N08L isFl2N08L and on typeRFP12N10L is F12N10L. TERMINAL DESIGNATIONS RFM12N08L RFM12N10L JEDEC TO-204AA RFP12N08L RFP12N10L DRAIN _» (FLANGE) o p SOURCE =!— i JEOEC TO-220AB DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE (R GATE-SOURCE VOLTAGE DRAIN CURRENT. RMS Continuous Pulsed POWER DISSIPATION @ ^=25° C Derate above TC-T25° C OPERATING AND STORAGE TEMPERATURE T,, T. ,= 1 MO) .. ^25-C ...
  • Voss .. Vow . . V<J8 . . ID lou PT RFM12N08L rs 0.6 RFM12N10L 100 100 0.6 RFP12NOSL RFP12N10L 100 100 ±10 -55 to+150 0.48 0.48 V V A A W W/°C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25°C unless otherwise specified. CHARACTERISTIC Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction-to-Case SYMBOL BVDDS Vos(th) loss less VDS(on)' ros(on)" g»a Cira Won) td(Off) RAc TEST CONDITIONS ID='I mA VGS=O Vos'Vos I0=1 mA VDS'=65 V Vos =80 V Tc=125°C VDS:=65 V VDS:=BO V Vas=±10 V VM*0 lo= 6 A VG5=5 V ID=12A VM=5V ID= 6 A VQS=5 V VDS;=10V lo='6 A Vos-25 V VGS=0 V f=1MHz VDO;=50 V ID=6A f(il^=<x> Ro.=6,25 O VGS=5 V RFM12N08L, RFM12N10L RFP12N08L, RFP12N10L LIMITS RFM12NML RFP12N08L MIN. 4.0 I5(typ) 70(typ) .100(typ) 80(tygL MAX. 100 1.2 3.3 0.2 900 325 170 150 130 150 1.67 2.083 RFM12N10L RFP12N10L MIN. 100 4.0 15(typ) 70(typ) 100(typ) 80(typ) MAX 100 1.2 3.3 0.2 900 325 170 150 130 150 1.67 2083 UNITS V V nA V n mho pF ns "C/W "Pulsed: Pulse duration = 300ps max., duty cycle - 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC Diode Forward Voltage Reverse Recovery Time SYMBOL VSD t,, TEST CONDITIONS lSD:--6 A IF=4A diF/dt=lOOA/0S LIMITS RFM12N08L RFP12N08L MIN. MAX. 1.4 150(typ) RFM12N10L , RFP12N10L MIN. MAX. 1.4 150(typ) UNITS V ns

  • Pulse Test: Width < 3OOfJS, duty cycle < 2%.