RFM10P12 GESS | Alldatasheet

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G E SOLID STATE OL DE 3875081 0014233 0 ii : 2875081 & E SOLID STATE O1E 48233 DT-39-2/ tandard Power MOSFETs — 2 T:39:95 RFM10P12, RFM10P15, RFP10P12, RFP10P15, File Number 1595, . TERMINAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors Q

10 A, -120V and -150 V

Toston = 0.5 Q Features: . f = SOA is power-dissipation limited ® Nanosecond switching speeds = Linear transfer characteristios 92cs-3e485 = High input impedance = Majority carrier device P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS The RFM10P12 and RFM10P15 and the RFP10P12 and — RFMI0P12 Rain RFP10P15° are p-channelenhancement-modesilicon-gate RFMI0PIS source (FLANGED power field-effect transistors designed for applications Such as switching regulators, switching converters, motor © rivers, relay drivers, and drivers for high-power bipolar « switching transistors requiring high speed and low gate- © drive power. These types can be operated directly from integrated circuits. e2¢s-s7e01 The RFM-types are supplied in the JEDEC TO-204AA steel RFP1OPI2 JEDEC TO-2040A package andthe RFP-typesin the JEDECTO-220ABpiastic — Arpigpig Package. — source, " ees — on “The RFM and RFP series were formerly RCA =) developmental TA9404 and TA9405, respectively. ———_=_= Tor view ‘GATE scents JEDEC TO-220AB A . . RFIMIOP12 — RFMIOPIS RFP1OP12 —-RFP10P15 Pulsed 20. .-0.-0eeeeeceereee lone Ta 0 se A Derate above To = 25°C 08 08 06 06 wee OPERATING AND STORAGE TEMPERATURE «0.0...ecccccceeeeeeeesenee Th Tg 9 ee $5to +150 °c

G — SOLID STATE OL Def} 3875081 00182394 1 . - 3875081 G E SOLID STATE _O1E 18234 p T- 39-2] Standard Power MOSFETS RFM10P12, RFM10P15, RFP10P12, RFP10P15 ELECTRICAL CHARACTERISTICS, At Case Temperature (To= 25°C) unless otherwise specitied = “J AF- MB LIMITS . TEST RFM10P12 RFM10P15 . CHARACTERISTIC CONDITIONS RFP1OP12 RFP10P15 Drain-Source Breakdown BVose lo=1mA =1860 Vv Voltage Ves = 0 Gate-Threshold Voltage Vestn Vas = Vos 4 v lo=1mA Zero-Gate Voltage Drain Vos = -100 V 1 Current Vos = -120 V - Te = 125°C BA Vos = -100 V Vos = -120V Gate-Source Leakage Current Vos = #20V nA Vos = 0 Ves = -10V v Ip = 10A Static Drain-Source On Tosien® 1o=5A Resistance Vos = -10V Forward Transconductance Vos =-10V lo=5A Output Capacitance Vessov [| — | 600 | — | 600 | pF Roverse Transfer Capacitance femne [= [0 [= 180 _ | ‘Turn-On Delay Time | two | Vos = -75V 2aityp) | 60 | 24(typ) | 50 | lo=5A 7attyp) | 160 | 74ityp) | 160] ns Turn-Off Delay Time Rom = Rex= 600 | 198(typ) | 225 | 198(typ) | 225 | Fall Time. | s |_vos=-10v__| 61ityp) exityp) | 100 | Thermal Resistance Ric RFM10P12, dunctlon-to-Case RFMt0P15 sow oo RFPIOP12, 1.67 1.67 : RFPI0P15 . ° SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS RFM10P12 | RFM10P15 CHARACTERISTIC SYMBOL TEST CONDITIONS RFP10P12. | RFPIOPIS |UNITS Reverse Recovery Time le= 4A, de/di= 100A/us | 210 (typ.) 210 (typ.) [m= | : * Pulsed: Pulse duration = 300 ys max., duty cycle = 2%. nS 7] ee SSS

G E SOLID STATE OL De ff387sS081 0018235 3 prvy¥e @ © SULID STATE O1e 18235 Db 7-392! Standard Power MOSFETs — 29 2. RFM10P12, RFM10P15, RFP10P12, RFP10P15 (CURVES MUST BE DERATED Eetintcasthidt peiictesteetet-ttte a Se UES SHE bet SE nuEy

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ORAIN-TO-BOURCE VOLTAGE (Vpg)-V"aacu-cenve Fig. 1 - Maximum safe operating areas for all types.

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©, HIREHE RFPIOP|2 PRDEL A REE Eat HERE Ey dabdeeeaacautuadsacecasacseetinescaeassseteeaeaeia| ABE TENPERATURE(Te)="0 -erion TeuenaTune(0)—"¢ base-stre secrsan Fig. 2 - Power dissipation vs. case temperature derating curve for Fig. 3 - Typical normalized gate threshold voltage as a function of all types. junction temperature for all types. EMM starseesieiciaisnscasseitaiseasssitintes se taetat IT, | putse curaniow eons tt TRH Bg FRE SHIT eeH HTH HT HEHEHE of EERE EH EEEEEEEEEEER gE 5S, HEH reser EEE HEE TEE PM aasaceenieeaseeaeenaatectiin dctermamarrate| A sEELESUsescASLEUGHERA Eat nsesacattastestostedial SLT EHH Pe mmm aves etd fatleccestesacaseesseat ent iatfadpadieresy| FMM HLLEEEERSTiERREEEETGaiinttey AUHREEEEGTaaaieeny ETRE HT EEE REE ae ere inate anna aaaadedeansbiaieieaieitapineeretertaiatiineititae IEEERERLESEEUS enueaiEiEDs 74s ETERS 8° © sation TeupenaTune eee ‘SATE-To-SOURCE VOLTAGE (Vogl ¥ eeseen sects Fig. 4 Normalized drain-to-source on resistance as as function Fig. §- Typlcal transfer characteristics for all types. - of junction temperature for all types. _ Se.

G E SOLID STATE GL DEM 3875081 00182356 § t 3 7@ E SOLID 139-2) + 3875081 G E SOLID STATE OlE 18236, ou Otero! - RFM10P12, RFM10P15, RFP10P12, RFP10P15 — inom) (CASE TEMPEMATURE (To) «2see HEE oer EEE wa fit . FARES ERE eerie — = = =e Ro ‘s2es-sear2 RET wee LE Fig. 6 - Normalized switching waveforms for constant gate-current Fig. 7 - Typical saturation characteristics for all typas. drive. Refer to RCA Power MOSFETs PMP411A. eg eo17 FEE ie | EebeesevroaDeet roam etesasaazeneetazitt puLse vest Sueuensnstetiinigeeesstiizadt jNERPERETIPS Seat earepecuatetdegutadgatiteessa| e PULSE OURATION = 6Ons CA Lola) | hescesscetsscsstscuehisceerssctessestssetecseactl LOSEEFEHTEHEHT EEE EEE EEE it Hateeacstsraabataragaseseniierinininatieeeinl OEE ETT EEE EEE EERE ead Sfaseeeseceesdestest tar iatastaieitareseetai gael DRAIN CURRENT (ZDIMA vane ORAIN-TO- SOURCE VOLTAGE (Vpg)-¥ Fig. 8 - Typical drain-to-source on resistance as a function of Fig. 9 - Capacitance as a function of drain-to-source voltage for drain current for all types. all types, Fig. 10 - Typical forward transconductance as a function of drain Fig. 11 - Switching Time Test Circuit. current for all types. ) ‘ 179 a el