RFP10N12 NJSEMI | Alldatasheet

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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFM10N12, RFM10N15, RFP10N12, RFP10N15 N-Channel Enhancement-Mode Power Field-Effect Transistors

10 A, 120V—150V

ros(on): 0.3 O Features:

  • SO/4 is power-dissipation limited m Nanosecond switching speeds m Linear transfer characteristics m High Input Impedance m Majority carrier device N-Channel Enhancement Mode TERMINAL DESIGNATIONS The RFM10N12 and RFM10N1S and the'RFP10N12 and RFP10N15* are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from Integrated circuits. The RFM-lypes are supplied in the JEDEC TO-204AA steel package and the RFP-types in the JEDEC TO-220AB plastic package. RFM10N12 RFM10N15 GATE JEDEC TO-204AA HFP10N12 RFP10N1S DRAIN FLANGE)-* f0" .._©_. 1 » — TOP VIEW JEDEC TO-220AB RFM10N12 RFM10N15 DRAIN-SOURCE VOLTAGE VMS DRAIN-GATE VOLTAGE (R^l Mf5) ... VKM GATE-SOURCE VOLTAGE Vra DRAIN CURRENT, RMS Continuous ID Pulsed lou POWER DISSIPATION @ Tc=2S'C PT Derate above Tc-25°C OPERATING AND STORAGE TEMPERATURE T,, T« 120 120 0.6 150 150 0.6 ±20 -55 to+150 RFP10N12 120 120 0.48 RFP10N15 1SO 150 0.48 V V V A A W wrc NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

RFM10N12, RFM10N15, RFP10N12, RFP10N15 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25° C unless otherwise specified CHARACTERISTICS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Resistance Forward Transconductanee Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction-to-Case SYMBOL BVoss Vasuiu loss loss Vos(on)' ros(on)' 9..' C{U COM Cn» td(on) Woff) RffJC TEST CONDITIONS ID = 1 mA Vos = 0 Vfls = VM ID = 2 mA Vos = 100 V VM = 120V Tc= 125° C Vos = 100 V VDS.= 120V Vas = ± 20 V VDS = O ID = 5 A Vas = 10 V ID = 10 A Vas = 10 V ID = 5 A Vas = 10 V Vos = 10 V In = 5 A V[>s=25 V V05 = 0 V f = 1MHz, VuD=75 V lo = 5 A R,.n = R0, = 50 n Vos = 10 V RFM10N12, RFM10N15 RFP10N12, RFP10N15 LIMITS RFM10N12 RFP10N12 MIN. 120 . - 40(typ.) 165(typ.) 90(typ.) 90(typ.) MAX. 100 1.6 0.3 650 230 250 135 135 1.67 2,083 RFM10N15 RFP10N15 MIN. 150 40(typ.) 165(typ.) 90{(yp.) 90(typ.) MAX. 100 1.5 0,3 650 230 250 135 135 1.67 2.083 UNITS V V M nA V n mho pF ns

  • C/W 'Pulsed: Pulse duration = 300 pa max.. duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC Diode Forward Voltage Reverse Recovery Time SYMBOL V5n TEST CONDITIONS lso*5 A IF=4A diF/dt=100A//js LIMITS RFM10N12 RFP10N12 MIN. MAX. 1.4 200(typ) RFM10N15 RFP10N15 MIN. MAX. 1.4 200(typ) UNITS V ns