RFM10N12 GESS | Alldatasheet

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“OL DE | 3875081 0018141 5 i : 3875081 G E SOLID STATE ote 18141 DT S9-//. - Standard Power MOSFETs __ ee RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Number 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors

10 A, 120 V — 150 V °

fos(on): 0.32 Features: « = SOA is power-dissipation limited = Nanosecond switching speeds @ Linear transfer characteristics 2c8-3aMF . 8 High input impedance

8 Majority carrier device N-Channel Enhancement Mode

‘TERMINAL DESIGNATIONS. . RFMIONI2 REMION1S Rain . source crtance) The RFM10N12 and RFM10N15 and the’ RFP10N12 and . RFP10N15°* are n-channel enhancement-mode silicon-gate © power field-effect transistors designed for applications such as switching regulators, switching converters, motor © drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- GATE ‘9208-37801 drive power. These types can be operated directly from . integrated circuits. YEDEC TO-20408 ‘The RFM-types are supplied in the JEDEC TO-204AA steel (RFPION12 package and the RFP-types in the JEDEC TO-220A8 plastic RFPION1S Package. — ‘SOURCE ‘The RFM and RFP series were formerly RCA developmental Oran | ~ || —— numbers TAGIO2 and TAQZI2, respectively. (FLANGEI—e] SII oe ‘ORAIN hel Tor view secs-39528 JEDEC TO-2208B : RFMIONI2 —-RFMIONIS REPIONI2 —_-RFPIONIS DRAIN-GATE VOLTAGE (Re=1 MQ) ... Voor 120 150 120 150 v Pulsed vessessesesees bow Fh Derate above Tc=25°C 06 06 0.48 0.48 wre ‘OPERATING AND STORAGE [i ——

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RFM10N12, RFM10N15, RFP10N12, RFP10N15 ELECTRICAL CHARACTERISTICS At Case Temporaturo (T.) = 25°C unless otherwise spocitied TEST REPION12 | _ RFPION1S CHARACTERISTICS SYMBOL conoitions [ MIN. | MAX.[ MIN. | MAX.| UNITS Drain-Source Breakdown Voltage BVoss lo=1mA Vv Vos = 0 Vos = Vos : ee Oe Zero Gate Voltage Drain Current eee uA Vos = 100 V Vos = 120 Gate-Source Leakage Current Vos = + 20 nA Vos = 0 Drain-Source On Voltage Vos(on)* a v lo =10A Ves = 10V Static Drain-Source On Resistance lo=5A 03 Vos = 10V : Forward Transconductance Vos = 10V | ne | lo=5A Input Capacitance Cise Vos=25 V 650 650 Output Capacitance Cons Vos = 0V 230 230 Reverse Transfer Capacitance Cas f= 1MHz, 60 60 Turn-On Delay Time ta(on) Voo=75 V 40(typ.)| 60 | 40(typ.) Rise Time t fo=5A — | 165(typ.)] 250 | 165(typ,) Turn-Off Delay Time teloft Ruon = Res = 50.0 90(typ.)| 135 | 90(typ.) Fall Time t Vos =10V | 90(typ.)| 135 | 90(typ.) ‘Thermal Resistance RFM10N15 : °. Junction-to-Case Rasc RFPION12, ow . RFP10N15, “Pulsed: Pulse duration = 300 ys max., duty cycle = 2%. ‘SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC symBot | conSStons BEM TON 12 BEMION'S | units | MIN. Tmax. | MIN. | MAX. | | Diode Forward Voltage Veo | teoSA | Pts | — | 14 | vd wove | ain |» | * Pulse Test: Width < 300 ps, Duty Cycle < 2%. ; — oo 2

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Standard Power MOSFETs — RFM10N12, RFM10N15, RFP10N12, RFP10N15 @] case Temperature (teie25e [| AEE - {| (cunves wust oe penate Be We EGemee i . 4 TEMPERATURE) Pecteeme ecu RGR Sica cniinim GERREGIHAEMe See cri PUPILS Fin ONES ANE: NS ER Wm One SESS RU Mice Suen BeeImemiMMuet cea et) eee See Pia Etiee een CEE See | fs Se NN Ee nltiti @ = Biaee | Poy FE oS Pe SAN NIN Ape WW = COE i ess SS Bi

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E Hicforeramown nie Enel US A[He|AREAisLmmTeD ANN SI altel eat : Fa CM 2 SO EEE Ree pec cee Pyne cee GN TG Ree SUING SOT ETE Tas | Meena te We IERIE tee Es eRe nae PE MEE Seen =H 2] Voss (axi+120¥ (remiow,wePioa HE EGE cloud ai eas (Mis SOV (Rraions, reiONts SHEE a see HEE 1 _ FASS SSS Ee tli 1 10 00 100 onani=To~ SOURCE VOLTAGE Vgg) —¥ . Fig. 1 — Maximum sate operating areas for all types. eee aEE GCE E EERE EERE EET =F SESE TEETER Ev Enterta ise geese sate le sean easter PET EHR EH GEER eee eee ESE EER EERE: mM cedHEEePraEEEE aaeeen aerate daze aes sen coatan teeters EEG Pa eieaceiat nie Ee Es dillinane SSL elated ii ee Ames eeett au Ba: ane EE RTT ee eS Soo a a EH EH EE fe HEE ESTEE SE a EOE FUG ugbantnad Gfdd faces todd ptaasteaaseasi ase} FH HTTP SHEE ESTE oo HEE Ee IESE epee Fig. 2 — Power vs. temperature derating curve for all types. Fig. 3 — Typical normalized gate threshold voltage as a function of junction tomperature for all types. PRM ceeeeeeiastselt aun EEE Fo eciiaraaennitseetitsneteenaper ura ovruiatst aeegee catetet EERE EES ES hS Aa amet Tween, Pr eareet0-B0uRCEVOLMCE HY aay Fig. 4 Normalized drain-to-source on resistance to junction tem- Fig. 5 — Typical transfor characteristics forall types. perature forall types. 86. —_ - we ee

: 3875081 GE SOLID STATE 91 pePsa75081 core.44 o I r39-/1 —_ SS Stanaard Power MOSFETS RFM10N12, RFM10N15, RFP10N12, RFP10N15 fonds, \\ ly Cee IN Se ~ , cea Fee haan ee outching wavelonstorconstantgstecutront 14 > _ 524 saturation characteristic {oral typos Se a a ee ee SMAI CURRENT DI~A sac g.seray [OMIN~TO=BOURCE VOLTAGE9g) = g2c6-se1sg Fig. 8 = Typical drain to-source on resistance asa tunction drain Fig. 9 — Capacitance ‘as a function of drain-to-source voltage for current forall pee. ail types. Wage 'Ov aioe naniitaditastinaited An emo srestrectterrevaeeeseid trav ieet eeeeenidi od rr reel Yo 7 ouERESRSULEEEERECE SSSSELESUESEStiutriS Ca tsessza3| 1. T feeeeeaeaees ARETE ERLE HEE eieieiaieiaienl s2c8-37369 OT Faanteontr dod ; Fig. 10- Typical forward transconductance as a function of Fig. 11 — Switching Time Test Circuit drain current for el ype : ee