RFM12P08

RFM12P08 GE | Alldatasheet

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G _E SOLID STATE - OL DEG 3875081 0018237 2

3875081 G E SOLID STATE _ O1E 18237 oT 397-2

Standard Power MOSFETS + 3 G 2g 4 : RFM12P08, RFM12P10, RFP12P08, RFP12P10 File Number 1495 Power MOS Field-Effect Transistors ‘P-Channel Enhancement-Mode TERMINAL DIAGRAM Power Field-Effect Transistors : °

12 A, -80 Vand -100 V

| tos(on) = 0.3.2 Features: ® SOA is power-dissipation limited = Nanosecond switching speeds . @ Linear transfer characteristics sece-seees ® High input impedance © Majority carrier device P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS RFM12P08 The RFM12P08 and RFM12P10 and the RFP12P08 and DRAIN RFP12P10" are p-channel enhancement-mode silicon-gate RFMY2P10_ source (ruayce power field-effect transistors designed for applications such as switching regulators, switching converters, motor driv- ® ers, relay drivers, and drivers for high-power bipolar switch- ® ing transistors requiring high speed and low gete-drive power. These types can be operated directly from inte- cate eco-r00 grated circuits. The RFM-types are supplied in the JEDEC TO-204AA steel RFP12P08 JEDEC TO-204AA package and the RFP-types in the JEDEC TO-220AB plastic RFP12P10 package. — source iNte — ‘RAIN “The REM and RFP series were formerly RCA developmental (rLANGe) eT numbers TA9410 and TA9411, respectively. ——— : Tor view are neces JEDEC TO-220AB RFM12P08 RFM12P10 RFP12P08 RFP12P10 DRAIN-GATE VOLTAGE (Rot MM)... Voor -80 ~100 -80 ~100 v Derate above Tc=25°C 08 OB 06 06 wee ‘OPERATING AND STORAGE 180

3875081 GE SOLID STATE __ o1e 18238 =p T7392! 02 def aa7soa: ooeesa 9 & OSFETs RFM12P08, RFM12P10, RFP12P: FP12P10 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tel=26C unless otherwise specified. = T’ D9-DB Test REM12P08 REM12°10 cuanacrensrics | smoot | cosl$STous vrs [ win, Tmax. | min. | Max. | Drae-SoucoBresdownvorase [eves | RI | eT [we | los Ip=1 MA Zero Gate Voltage Drain Current Vos=-65 V f= |if= {a Vos=-80 V 4 ‘Te= 125°C. uA es Vos=-65 V . Vog=-80 V “ Vos=0_ Drain-Source On Voltage Vos(on)® 1o=6 A [= [7] = | Vos==10V v Vase-10 V Vos=-10 V cc = feimHz [7 — | 240 | =| 240 | Veors0v | 18(tye) | 60 | t8ttye) | 60 [RiseTime | tt | so A _—[00(typ) [175 [00ttyp) | 175 | Foen=Fis*60 22 [Fatima Tt | Vos=—10v | attyp) | 175 | oattyn) | 175 | Junction-to-Case REM12P10_ ° RFP12P10 “Pulsed; Pulse duration = 300 ys max., duty cycle = 2%. ‘SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS TEST RFM12P08 RFM12P10 CHARACTERISTIC SYMBOL | conpiTIONS | MIN. [ MaX. | MIN. | MAX. | [Diode ForwardVotage | Veo | eo Af] a | “Pulse Test: Width = 300 ys, duty cycle = 2%. FN

3875 ~~ OL DE I 3875041 0018239 O ii 3 081 GE soLip te “! : stand STATE O1E 18239 Standard Power MOSFETs COTE 18239 39-23 RFM12P08 , RFM12P10, RFP12P08, RFP12P10 100 ease Tenrenirine (i) - 260 SSS ESSE o| (CURVES.wusT BE CeRATED = ESE HEH Spot ErH | LINEARLY WITH INCREASE IN BIEFSES THT] HTu aie SMT «| Temperarure) jaz EH s eeu EU CORO W SHS Stee rere = Sop nae Sis Spall + ee eee atl Fe twa] CONTINUOUS === ee eee eet en oer etl + 0 Fee Sa a Set = SF ge ae?s See SSeS Shiite = ae = abet

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7 jonenation inf Hees nS fides ET] afSlumiren ey Beet eater sete Neti EEE Eeateleet 4) See Saat eS aay Pees Se eS Et eee Soe Sue HE = Soe = Sb0i| ‘Voss (Waxi+ 60 V RrwiaPos /RrPrerooky cir iijsesastetat (1 *} Voss (MAX) «100 v RFMI2PIO/ RFPI2PIO REA eects Fale Seewes SSS obo sees SHES eee asl Se ee o. ESS RE SE AES SE Hae ea erty ' 0 100 ‘ ‘000 ORAI-TO-SOURCE VOLTAGE (Vos) —-¥ s2es-sri0681 Fig. 1 — Maximum sate operating areas for al types. a pueiat CNR ERL CR aieuacnia tsi Ma Prececeeritteascesisesesseatteieeditisestiaittaeay ate) SSN a TT eS od ee EEE bea cists tees rain inneie tri asia ata asasasadeaac CUUfatata nated ed eg resaeatatas| ¢ Ea eS = amie anaee feee oaeaes eae ‘Hae TeuPenaTun t=e cron Tewrenavune tye Fig. 2 — Power dissipation vs. case temperature derating Fig. 3 — Typical normalized gate threshold voltage as a function curve for al types. af junetion temperature forall ypes. ner TenmenaTunet—e GATE 0-S0MCEVOLHGE figs) Fig. 4 — Normalized drain-to-source on resistance as @ function Fig. 5 — Typical transler characteristics forall ypes of junction tomperature for all types

G E SOLID STATE on pe Qse7soa. oorseuo 2 9 . 3875081 G E SOLID STATE O1E 18240 ~D TeoLZ! $$ Standard Power MOSFETS RFM12P08, RFM12P10, RFP12P08, RE! ca 4 sows ov0veaw 1.3 Pere im gah oo gnen [i a cee se meee |) i estes © ona DRAM -TO- SOURCE VOLTAGE ogl-¥ Fig. 6 Normalized switching waveforms orconstantgate-current Fig. 7 Typical saturation characteristics for all ypes. drive. . a Fig. 8— Typical drain-to-source on resistance as @ function Fig. 9~ Capacitance as a function of dran-to-source of drain current forall types voltage for all typos. TEETER EERE RHEE EER EEHEn HTH g3a at aceecrateaeeet at EEE EEE od FAR: atuneuerieice eae 1 Ea tert nut eet ERE TER HEEa 1 Cheat mee ae ee ae ae oe eee) L----- = TL : aa cone igi sacs-s7s03 Fig. 10 — Typical forward transconductance as a function Fig 11 —Switehing Time Test Circut af cramn current forall ypes i 183

G E SOLID STATE ou de 3875082 cores. 9 Bf . 38750 .

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Standard Power MOSFETs —— es RFH25P08, RFH25P10 File Number 1632 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode TERMINAL DIAGRAM Power Field-Effect Transistors °

26 A, -80V - -100V

Toston = 0.15.2 Features: a = SOA is power-dissipation limited ° ®= Nanosecond switching speeds «= Linear transfer characteristics = High input impedance = Majority carrier device stea-seqes = High-current, low-inductance package P-CHANNEL ENHANCEMENT MODE ‘The RFH25P08 and RFH25P10* are p-channel enhance- ment-mode silicon-gate power field-effect transistors TERMINAL DESIGNATIONS designed for applications such as switching regulators, aevospqg nce switching converters, motor drivers, relay drivers, and i drivers for high-power bipolar switching transistors *FH25P10 ;_—... requiring high speed and low gate-drive power. These types N can be operated directly from integrated circults, nan | —— The RFH-types are supplied in the JEDEC TO-218AC i N plastic package. | a ee Tor ww Oe “The RFH26P08 and RFH25P10 types were formerly RCA . developmental numbers TA9577A and TA9577B mesa respectively. JEDEC TO-218AC RFH25P08 RFH25P10 DRAIN-GATE VOLTAGE, Ros = 1 MQ ssc ccccesseceseseeeeteeceeeeteeeeeeseeeteeseees VOOR +80 100 v PUISCD «0000s eee eeceeeeeceeeeteeeeeecnereeeseteteeserececeeeeeelom 60 POWER DISSIPATION @ To = 25°C... .esesseeeseeeeseeeeceseesesenseeeeeeeeeeeeeeere Pro 150 Ww Derate above Te = 25°C ——— 12 184 _-.~ ==, a

SEs state COSCSsSsSstsS”S”S” OE BSD B2H? OO G vv vvet @ & SULID STATE ; O1E 18242 DT=39-23 Standard Power MOSFETs RFH25P08, RFH25P10 ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C unless otherwise specified. LIMITS TEST CHARACTERISTIC SYMBOL | CONDITIONS |__arvzspoe | arsasero | UNITS Drain-Source Breakdown BVoss lo=1mA v Voltage Vos = 0 Gate Threshold Voltage Vas(th) Vas = Vos 4 4 v lp = 1mA Zero Gate Voltage Drain Vos = -80 V Current Vos = -65 V Te = 125°C Vos = -80 V Vos = -65 V Gate-Source Leakage Vos = + 20V Current Vos = 0 -| Drain-Source On Voltage Vos(on)® lo =12.5A 1.88 71.88 Vas = -10V Ip =25A 45 . Vas = -10 V Static Drain-Source On l= 12.54 0.15 Resistance Vos = -10V Forward Transconductance Vos = -10V mho Ip =12.5A Output Capacitance [Gn] Ves=ov [= 4600 | =] 1800] te1wnie [=| ~60 | | s00 | | Tur-On Delay Time | ton) | Voo=-60V | aiyp) | 80 | Seiya) [0] Rise Time to= 125A | i@s(typ) | 250 | 165(typ) [250 | (off) | Paes=Rewrson [270(typ) | 400 | 2701typ) | 400 | | Falitime Tt | Voss -10v_ | r6sityp) | 250 | te5(typ) | 250 _| Thermal Resistance RFH25P08, . + Junction-to-Case RFH25P10 0.83 "c/w Series “aPulsed: Pulse duration = 300 ys max., duty cycle = 2%. ‘SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS CHARACTERISTIC TEST CONDITIONS RFH25P08 RFH25P10 | UNITS | oeeronravone ve] teresa | — [va | - | va | * Pulse Test: Width < 300 ys, Duty cycle < 2%. 185

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3875081 G E SOLID STATE o1e 18243 OT S9-23

RFH25P08, RFH25P10 s| (CURVES MUST BE DERATEO face ita eo ey Meee ee 2 iam bev erect es er erert i terete 2 Siro ceasn Ulormiia = Susie oeea| H ee ae =I tio 5 Bo ‘ooo . . Rain“ T0-SoURcE VOLTAGE tips)-¥ Fig. 1 - Maximum safe operating areas for all types. sy aEaTaoeas Seecewedatatataratatatatatatat tise are eetaeHateueesatapatarepastseqiitataeatsettaiad} Look EEE HEHE HE ee Eee Eee Oi eeeeecress a teeeeeaeeeseati Reng eeeeataeeeie Bees HHH HHH ENGELS EEE oof HAASE HEHE THA EE EES SEE SET EES ES BESS ‘case TEMPERATURE {TeIW°c, > UNCTION TEMPERATURE (75 )=%6 Fig. 2- Power dissipation vs. temperature derating curve for all Fig. 3 - Typical normalized gate threshold voltage as a function of types. Junction temperature for all types. . peyrasasesteseststay esentesabantoterestaray Ws =v rT Ee ls FREREEHEER HE Ee Hee le jourycvcceses |” HUSH TE Hod/~ AEH Hemme saasesdaiaeenstitteesteeeateeeetecaaittietay Peesueseeeeeititatdtssaviceeteeeinininiar fH saedusstaeteteceocstattetiittaceatiseeseatceiae| Arum Tassie ccutaiulsteatatetecttitatatacs //tetauacs SEdiessacedineanitesseipvose tesa HE eEnHataa gum Hauser cea Riaaaeay ed eatediy cattstastttate femme seeenet scone eeaneiseaseatodadarenetttataetnsaat! Re REE ee of HSE STE TPE i Bu ieeinniste animate “Fig. 4 Normalized drain-to-source on resistance to junction Fig. § - Typical transfer characteristics for all types. femporature forall types, 186 = =

G E SOLID STATE OL def 3a7sos, ooraesy 4 rT . - . 3675081 GE SOLID STATE _, O18 18244 OTF S923 RFH25P08, RFH25P10 , I" od SESE EER SEES — tS Fa ee AR) asa) EN ! Pe a nets \\ ee eae a tenth ew \\ ar paints \\} BE ee teat 1] gum source vouset \\ id ee eee ane | - mwes mececenee evan © maIn-O=SOURCE VOLTAGE 'Vpgicv : Fig. 6 - Normalized switching waveforms for constant gate-current Fig. 7 - Typical saturation characteristics for all types. rive ev a, err reyFesartrarieaesieatfeateseesitaiieveeatestil FTE RSSEETEE HEHE EEEETEH one Gain uct REE REE EE ee HLL > an caer tzg oe oransro-soune wouseeMag-¥ Fig. 8 - Typical drain-to-source on resistance as a function of _Fig. 9 - Capacitance as a function of drain-to-source voltage for drain current for all types. all types. re ERE et el beter ee EEE \\ Senta i FOE TTTEH HT EEE ETT] Lo-2toad oft EH SET EEE) ~ sacs sr08 OF ophBstodce iaaircsgina’®# Fig. 10 - Typical forward transconductance as @ function of drain Fig. 11 - Switching Time Test Circuit. current for all types. re

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3875081 G E SOLID STATE O1E 18245 0D) T+ 3I-23

Standard Power MOSFETs — RFK25P08, RFK25P10 File Number 1516 P-Channel Enhancement-Mode Power Field-Effect Transistors °

25 A, -100 V—-80V

Tos(on): 0.150 Features: e | = SOA is power-dissipation limited = Nanosecond switching speeds = Linear transfer characteristics oncs-seaes = High input impedance ® Majority carrier device P-CHANNEL ENHANCEMENT MODE The RFK25P10 and RFK25R08* are p-channel enhance- TERMINAL DESIGNATIONS ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, DRAIN switching converters, motor drivers, relay drivers, and ‘SOURCE (FLANGE) drivers for high-power bipolar switching transistors re- quiring high speed and low gate-drive power. These types © can be operated directly from Integrated circuits. ® The RFK-types are supplied in the JEDEC TO-204AE steel package. are Sres-sr001 “The RFK25P10 and RFK25P08 types were formerly RCA. TO-: . developmental numbers TA9412A and TA94128, respectively. YEDEC TO-204AE . MAXIMUM RATINGS, Abso/ute-Maximum Values (Tc=25°C): RFK2SP10 RFK2SPO8 DRAIN-SOURCE VOLTAGE «0... sssesseeesceeeeeeseerereserseeeee Woes. 100 ~60 v @Te= 25°C OO w Derate above Te=25°C —_ 12 WO eg

G E SOLID STATE 01 de 3875081 ooreaye ok , 3875081 G E SOLID STATE OTE 18246, DB T-B9- ss Standard Power MOSFETS RFK25P08, RFK25P10 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25°C unless otherwise specitied. [mis TEST RFK25P10_[ _RFK25P08 CHARACTERISTIC SYMBOL | conpitions [MIN | MAX | MIN. | MAX] Drain-Source Breakdown Voltage BVose To=t mA | -100 | - | Vos=0 Gate Threshold Voltage ° ‘Vas=Vos [ = | 4 lo=1 mA Zero Gate Voltage Drain Current Vos=-80V = : Vos=-65 V 1 | | Te= 125°C vA Vos=~80 V Voo=-65 V os Drain-Source On Voltage 10=12.5 A | - | Vos=-10V v 1o=25 A | = | Vas=-10 V ‘Static Drain-Source On Resistance 1o=12.5A | - | Vos=-10V Forward Transconductance Ves=-10V 1o=12.5 A [Input Capacitance Gs Voe=-28V |= | 9000 | =| 3000 | [Output Capacitance TCs | eseov = | | 1500 | =| 1600 | Reverse Transfer Capacitance f=imHz | — [500 |" =" | 500 _| Turn-On Delay Time Voo=-50V ~ |35(typ)| 50 _[35(typ) | 60] Turn-Off Delay Time [te (off) | Paen=Rex=50 70(typ)| 400 _B70(typ)| 400_| Fall Time [ts | Vas=-10v_f165(typ)] 250 _f65(typ)| 250 _| Thermal Resistance RFK25P10, | - [08s | [son | Junction-to-Case RFK25P08 “Pulsed: Pulse duration = 300 ys max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Test SYMBOL | Conpitions |_RFK25P10_[RFK25P08 | [ Min. [ Max. | Min. Max. | “Pulse Test: Width < 300 ps, Duty Cycle = 2%. a © ws

G E SOLID STATE _ OL pe 3875081 0018247 o : | 3875081 GE SOLID STATE ote 18247 Di T3925 | Standard Power MOSFETs RFK25P08, RFK25P10 | (CURVES MUST SE DERATED Basset ‘ Uncanty With MenEAse Bauteai| || (iaineebeetsh ty t Hsia be sy 9 test iat se

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[ee oes (uaxieoovinrcesPio) EF pe | Sees ee Se dee eee 6 eee ES wre ae To a a DRAIN TO-SOURCE VOLTAGE ipg)=V ee-s7a00 Fig. 1 - Maximum safe operating areas for all types. oa Stags Sas0s SHES SESH CREREISESSERESEaatstasasaezey ERIEEEIAESESESEESSEUEISEGEOREOGSGECSEGE=4] a ROGERS LSseLie ss baseaszresnasfauteaniasestieiosea) SsaSSis oa esscsceeazsSbesenaisitaassnattadessctee case rolftnarur igrse, 8 aterion tetrenarune (ty 1=°0 Fig. 2 - Power dissipation vs. temperature derating curve for Fig. 3 Typical normalized gate threshold voltage as a function all types. of junction temperature for all types. /SSEREEEELEUcEsEdEGELEUEIEEEAEUEEEStOgSiEdEtiozass| pes sSussrassistiad ceeded apeeies esezteter azestatat eaaueeeieerireaeitiae ei aeeinaseetTaeeeaaT Pm etReeereRHaEeeetase eHEEESEEEEEEn cepstze SOSA SrEsaSabSad ti assatascedsseabasitnesnsttarsteiil gpm esate csttbseeteeieeitcteactiatiesstay a @omisaia ee Eeeeseazastaeetaseatuseatoitetesinnaiettittaaasa| Ss HASHES HEH DeMmn sdisdaseuiastateatesertessost=ceaccssatestaeisiss| ISSEESESEORETSSELEats sSatssuesnese’ QAtitatetatisit| foMBdtedunaressccscecttnitesttasteattatetateaiessaiszs Pam Seasdesasttatitcsesistititinee ceametetnetitesst| = an a i, sce teat Fig. 4 - Normalized drain-to-source on resistance to junction Fig. 5 - Typical transfer characteristics for all types. temperature for all types. 190 eo CTO oc eee

G E SOLID STATE OL def) 3a7soa1 ooraeya a -3875081,G_E SOLID STATE O1E 18248 p TES9-25 ee. Standard Power MOSFETs: RFK25P08, RFK25P10 vor \\ Fem Ge tee gre RS ere ieacn ‘igen hag feeete serps teeter ytd reermteeeterer et ann to-sitnce Hara ge Fig. 6 - Normalized switching waveforms for constant gate-current Fig. 7 - Typical saturation characteristics for all types. cre. FB Shame eer rier 5 ozo HEE HEELS H FedmmmmN ceustesutsssdbaasteedt eiisostttnnersiioasiaat EPO eu eG ESET Te eT ER Pa coer ze onincro-soune vous ve) sacs-s7248 ncecsTa4T Fig. 8 - Typical drain-to-source on resistance as a function of Fig. 9 - Capacitance as a function of drain-to-source voltage drain current for all types. for all types. =I THT HEE Reve “a : gM) ruse cunariow tons FETE EHH HEHE Isebeegeeesecgis cathtuesss saute tescessctessetiazesl q Esmciceecoeesettitittntinnieenetiine ' von PPR SEE: cabs a ctieastatteaertetatanteasssteaetnieacs| i 0 ® omkin-t8-sounce Sinner (zp i-a® . ‘20 ani Fig. 10 - Typical forward transconductance as a function of Fig. 11 - Switching time test circuit. drain current for all types. oo i = : 191