RFL1N12 NJSEMI | Alldatasheet
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Technical content
Features
- 1 A, 120V and 150V SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device
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Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Symbol PART NUMBER RFL1N12 RFL1N15 PACKAGE TO-205AF TO-205AF BRAND RFL1N12 RFL1N15 Packaging JEDEC TO-205AF DRAIN . (CASE) SOURCE GATE Quality Semi-Conductors
Absolute Maximum Ratings Tc = 25°c, Unless otherwise specified Drain to Source Voltage (Note 1) VDSS Drain to Gate Voltage (RGS = 1 Mii) (Note 1) VDGR Continuous Drain Current ID Pulsed Drain Current IDM Gate to Source Voltage VGs Maximum Power Dissipation Pp Linear Derating Factor Operating and Storage Temperature Tj, TgjG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s TL Package Body for 10s, See Techbrief 334 Tp^g CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. RFL1N12 120 120 ±20 8.33 0.0667 -55 to 150 300 260 RFL1N15 150 150 ±20 8.33 0.0667 -55 to 150 300 260 UNITS V V A A V W W/°C NOTE: = 25°Cto125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage RFL1N12 RFL1N15 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case SYMBOL BVDss VGS(TH) bss !GSS VDS(ON) rDS(ON) 9fs 'd(ON) tr ld(OFF) tf CISS coss CRSS R6JC TEST CONDITIONS ID = 250uA, VGS = ov VGS = VDS. 'D = 250uA, (Figure 8) VDS = 0.8 x Rated BVDSS, Tc = 25°C Tc = 125°C VGS = ±2ov, VDS = ov ID =1 A, VGS = iov ID = 2A,VGS = 10V ID = 1A, VGS = 1°V, (Figures 6, 7) ID = 1A, VDS = 1°V, (Figure 10) ID=IA, vDD = 75V, RGS = son VGS - 10V, (Figures 11, 12, 13) VGS = ov. VDS = 25V, f = 1 MHz, (Figure 9) MIN 120 150 400 TYP MAX ±100 1.9 6.3 1.9 200 UNITS V V V uA uA nA V V S ns ns ns ns pF pF pF °C/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 1A ISD = 1A, dlSD/dt = 50A/U.S MIN TYP 150 MAX 1.4 UNITS V ns