RFL1N08 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • 1 A, 80V and 100V

Ordering Information

NOTE: When ordering, use the entire part number.

Description

These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated cir- cuits. Symbol G O S 6 Packaging JEDEC TO-204AA DRAIN (CASE) SOURCE GATE NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Absolute Maximum Ratings Tc - 25°C, Unless otherwise Specified RFL1N08 Drain to Source Voltage (Note 1) VQS 80 Drain to Gate Voltage (RGS = 20kH) (Note 1) VDGR 80 Continuous Drain Current ID 1 Pulsed Drain Current (Note 3 IDM 5 Gate to Source Voltage VGS ±20 Maximum Power Dissipation PD 8.33 Linear Derating Factor 0.0667 Operating and Storage Temperature Tj, TSTG -55 to 150 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s TL 260 RFL1N10 100 100 ±20 8.33 0.0667 -55 to 1 50 UNITS V V A A V W W/°C 260 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: = 25°Cto125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage RFL1N08 RFL1N10 Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case SYMBOL BVDSS VGS(TH) toss 'DION) IGSS rDS(ON) ld(ON) V td(OFF) tf CISS coss CRSS RBJC TEST CONDITIONS ID = 250nA, VGS = ov VDS = VGS. !D = 250nA, (Figure 8) VGS = Rated BVDSS, VGS = ov VDS = 0.8 x Rated BVDSS, VGS = OV, Tj = 125°C VDS > ID(ON) x rDS(ON)MAX. VGS = 10V VGS = ±20V ID = 5.6A, VGS = 10V. (Figures 6, 7) VDD = sov, VGS = 10V. ID = 1A, RG = son, MOSFET Switching Times are Essentially Inde- pendent of Operating Temperature VDS = 25V, VGS = ov, f = 1 MHZ MIN 100 TYP MAX ±100 1.200 200 UNITS V V V HA A nA Q ns ns ns ns PF PF PF °C/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS Tj = 25°C, ISD=1A,VGS = OV Tj = 25°C, ISD = 1A, dlSD/dt = 100A/HS MIN TYP 100 MAX 1.4 UNITS V ns NOTES: 2. Pulse test: pulse width < 300|is, duty cycle < 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature.