RFK35N10 NJSEMI | Alldatasheet

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J.EIIE.U , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFK35N08, RFK35N10 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE

35 A, 80V -100V

ros(on) = 0.055 n Feature::

  • SOA is power-dissipation limited
  • Nanosecond switching speeds
  • Linear transfer characteristics
  • High Input Impedance
  • Majority carrier device TERMINAL DIAGRAM The RFK35N08 and RFK35N10* are n-channel enhance- ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators. switch- Ing converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. The RFK-types are supplied in the JEDEC TO-204AE steel package. TERMINAL DESIGNATIONS RFK35N08 RFK35N10 JEDEC TO-204AE DRAIN-SOURCE VOLTAGE .* Voss DRAIN-GATE VOLTAGE. R,,=1 MO ." VKM DRAIN CURRENT. RMS Continuous lo Pulsed IDM POWER DISSIPATION @ TC=26'C PT Derate above TC=2S°C OPERATING AND STORAGE TEMPERATURE Tt T.,, RFK35N08 RFK3SN10 100 100 ±20 100 150 1.2 -5510*150 V V V A A W W/*C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

RFK35N08, RFK35N10 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)*25°C unless otherwise specified. CHARACTERISTICS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Ofl Delay Time Fall Time Thermal Resistance Junction-to-Case SYMBOL BVras Vas(th) IDSS loss VM(on)' ros(on)' Oft' C«, to(on) to(off) Rfljc TEST CONDITIONS lo=1 mA

  • VM=0 Vos=Vra I0=1 mA Voa=65 V Vos=BO V Tc=125°C Vos=65V Vos=80 V Vos=±20 V Vos'O ID'17.5A Vos=10V lo»35A Vos^lOV ID-17.5A Vos?10 V Vos=10 V lo=17.5A Vns=25 V Vo8=OV f=1 MHz Vpo'SOV ln=17.5A Rg.n=R«=50n Vos=10V RFK35N08, RFK35N10 Series LIMITS RFK35N08 MIN. 80 • — ' 45(typ) 225(typ) 240(typ) 165(typ) MAX. 100 0,9625 3.5 0.055 3000 1500 600 100 450 450 350 0.83 RFK35N10 MIN. 100 45(typ) 225(typ) 240(typ) 165(typ) MAX. 100 0.9625 3.5 0.055 3000 1500 600 100 450 450 350 0.83 UNITS V V //A nA V n mho PF ns °C/W SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC Diode Forward Voltage Reverse Recovery Time SYMBOL Vso- TEST CONDITIONS , lso-17.5A I,=4A d,F/d,=100A///s LIMITS RFK35NOB MIN. MAX. 1.4 200(typ) RFK35N10 MIN. MAX. 1.4 200(typ) UNITS V ns "Pulsed: Pulse duration = 300 ^ max., duty cycle = 2%.