RFH45N05 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
^^mi-donductoi Lpioauati, Ona. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFH45N05, RFH45N06 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
45 A, 50 V - 60 V
rostoni = 0.040 n Features: SOA is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance Majority carrier device High-current, low-inductance package TERMINAL DIAGRAM N-CHANNEL ENHANCEMENT MODE The RFH45N05 and RFH45N06' are n-channel enhance- ment-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from Integrated circuits. The RFH-types are supplied in the JEDEC TO-218AC plastic package. TERMINAL DESIGNATIONS RFH45N05 RFH45N06 JEDEC TO 218AC DRAIN-SOURCE VOLTAGE VDSS DRAIN-GATE VOLTAGE. R,. " 1 MO VOOB GATE-SOURCE VOLTAGE Vos DRAIN CURRENT. RMS Continuous ID PulfiSd IDU POWER DISSIPATION @ Tc = 25'C PT Derate above Tc - 25° C RFH45NOS RFH4SN06 so so ±20 100 150 1.2 V V V A A W W/'C OPERATING AND STORAGE TEMPERATURE. .T..T., .-55(0+150. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
RFH45N05, RFH45N06 ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C unless otherwise speciried. CHARACTERISTIC Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Ofl Delay Time Fall Time Thermal Resistance Junction-to-Case SYMBOL BVoss Vos(th) loss loss VD8(on)« ros(on)» g>," C,» COM td(on) Wolf) R«ic TEST CONDITIONS ID = 1 mA Vos = 0 Vas = VDS ID s 1 mA VDS * 40 V Vos = 50 V Tc"125*C VM = 40 V Vos = 50 V Vos = ± 20 V VM = 0 ID * 22.5 A Vos = 10 V ID = 45 A Vos = 10 V ID = 22.5 A Vos = 10 V Vos = 10V ID =• 22.5 A Vos = 25 V Vos = 0 V f=1MHz Vos * 30 V ID = 22.5 A R(w"R<j«-50n Vos = 10 V RFH45N05, RFH45N06 Series LIMITS RFH45NOS Mln. 40(typ) 310(typ) 220(typ) 240(typ) Max. 100 0.9 3.6 .04 3000 1800 750 475 350 376 0.83 RFH45N06 Mln. 40(typ) 310(typ) 220(typ) 240(typ) Max. 100 0.9 3.6 .04 3000 1800 750 475 350 375 0.83 UNITS V V M nA V mho PF ns "C/W
- Pulsed: Pulse duration = 300 //s max.. duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC Diode Forward Voltage V80 ' Reverse Recovery Time . tr. TEST CONDITIONS ISD = 22.5A IF « 4A. a,r/a, = 100 MUS LIMITS RFH4SN05 Mln. Max. 1.4 150 (typ.) RFH4SN06 Mln. Max. 1.4 150 (typ.) UNITS V ns ' Pulse Test: Width < 300 //a, Duty cycle < 2%.