RFH35N10 NJSEMI | Alldatasheet
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'jziizu <^s.tni-(Lonauctoi i, O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFH35N08, RFH35N10 Power MOS Field-Effect Transistors N-Chanhel Enhancement-Mode Power Field-Effect Transistors
35 A, 80V-100V
rosiom = 0.055 O Features: SOA Is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High Input Impedance Majority carrier device High-current, low-Inductance package TERMINAL DIAGRAM D N-CHANNEL ENHANCEMENT MODE The RFH35N08 and RFH35N10* are n-channel enhance- ment-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The RFH-types are supplied In the JEDEC TO-21BAC plastic package. TERMINAL DESIGNATIONS JEDEC TO-218AC DRAIN-SOURCE VOLTAGE Voss DRAIN-GATE VOLTAGE. R,. • 1 MO VOOR GATE-SOURCE VOLTAGE Voa DRAIN CURRENT. RMS Continuous ID Pulsed IDM POWER DISSIPATION @ T0 = 25° C Pi Derate above Tc » 85° C RFH35N08 HFH35N10 ±20 100 150 1.2 100 100 V V V A A W W/«C OPERATING AND STORAGE TEMPERATURE. .Ti, T,,, .-5510*160. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
RFH35N08, RFH35N10 ELECTRICAL CHARACTERISTICS. •< Gait Temperature (Tc) = 25° C unl*M oth«rwl*» *p»Cl(l«d. CHARACTERISTIC Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gals Voltage Drain Current Gate-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction-to-Case SYMBOL BVoss Vas(th) lass loss Vos{on)« rns(on)* g..» C,,. C... ti(on) to(Off) R«JC TEST CONDITIONS ID - 1 rnA Vos = 0 VH5 = VDB IB = 1 mA VDS - 65 V Vos = 80 V TC = 125°C VDS = 65 V Vos - 80 V Vos = ± 20 V Vos-0 lo =17.5 A Vos • 10V ID = 35 A Vos - 10 V lo = 17.5 A Vos = 10 V Vos = 10V lo= 17.5 A Vos = 25 V Vas = 0 V f = 1 MHz VDD = 50 V I0 = 17.5 A twn,.»son V08 = 10V RFH35N08, RFH3SN10 Series LIMITS RFH35N08 Mln. 45(typ) 225(typ) 240(typ) 185(typ) Max. 100 0.963 3.0 0.055 3000 1500 600 100 450 450 350 0.63 RFH3SN10 Mln. 100 45(typ) 225(typ) 240(typ) 165(typ) Max. 100 0.963 3.0 0.055 3000 1500 600 100 450 450 350 0.63 UNITS V V pA nA V Q mho PF ns °C/W
- Pulsed: Puise duration = 300 /is max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC Diode Forward Voltage VSD ' Reverse Recovery Time tn TEST CONDITIONS !SD= 17.5A IF - 4A, dif/d, = 100A//JS LIMITS RFH35N08 Mln. Max. 1.4 200 (typ.) RFH35N10 Mln. Max. 1.4 200 (typ.) UNITS V ns ' Pulsed: Pulse duration ~ 300 /is max., duty cycle = 2%.