RFH25P08 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- -25A,-100V and-80V
Ordering Information
Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated cir- cuits. Symbol NOTE: When ordering, use the entire part number. o s Packaging JEDECTO-218AC JEDEC TO-204AE DRAIN SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1)
Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified Maximum Temperature for Soldering CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. RFH25P08 RFK25P08 -80 -80 -25 -60 ±20 150 1.2 -55 to 150 300 260 RFH25P10 RFK25P10 -100 -100 -25 -60 ±20 150 1.2 -55 to 150 300 260 UNITS V V A A V W W/°C NOTE: = 250Cto125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage RFH25P08, RFK25P08 RFH25P10, RFK25P10 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case SYMBOL BVDSS VGS(TH) IDSS 'GSS rDS(ON) VDS(ON) ld(ON) V 'd(OFF) tf . CISS coss CRSS R8JC TEST CONDITIONS ID = 250nA, VGS = 0V VGS = VDS. ID = 250p,A, (Fi9ure 8) VDS = Rated BVDSs. VGS = 0 VDS = °-8 x Rated BVDSS. VGS = °> TC = 125°C VGS = ±2ov, VDS = ov ID = 25A, VGS = -10V, (Figures 6, 7) lD = -25A,Ves = -10V ID - 12.5A, VDS = -50V, RGS = SOD, (Figures 10, 11, 12) VGS = OV, VDS = -25V, f = 1 MHz (Figure 9) RFK25P08, RFK25P10 MIN -80 -100 TYP 165 270 165 MAX -25 ±100 0.150 -3.75 250 400 250 3000 1500 600 0.83 UNITS V V V HA MA nA n V ns ns ns ns PF pF PF °C/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD=-12.5A ISD = -4A, dlso/dt = 100A/HS MIN TYP 300 MAX -1.4 UNITS V ns NOTES: 2. Pulse test: pulse width < 300^5, duty cycle < 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature.