RFH25N20

RFH25N20 NJSEMI | Alldatasheet

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<^>E.m.L-L.ond.uctoi iJ-*ioaucti, Line, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 RFH25N18, RFH25N20 Power MQS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM

25 A, 180V -200V

rosioni = 0.15 0 Features: SOA is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High input Impedance Majority carrier device High-current, low-Inductance package N-CHANNEL ENHANCEMENT MODE The RFH25N18 and RFH2SN20' are n-channel enhance- ment-mode silicon-gate power field-effect translators designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers tor high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from Integrated circuits. The RFH-types are supplied in the JEDEC TO-218AC plastic package. TERMINAL DESIGNATION RFH25N18 ,OUBCE RFH25N20 DRAIN JEDEC TO-218AC DRAIN-SOURCE VOLTAGE VMS DRAIN-GATE VOLTAGE, R., = 1 MO Vooo GATg-SOURCE VOLTAGE : -. Vos DRAIN CURRENT, RMS Continuous ; I0 Pulsed Ion POWER DISSIPATION @ Tc - 25°C P, Derate above Tc - 26* C OPERATING AND STORAGE TEMPERATURE T,, T.«, RFHS5N18 RFH25N20 180 180 ±20 150 1.2 200 200 V V V A A W w/°c -55 to +150 . NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-conductors

RFH25N18, RFH25N20 ELECTRICAL CHARACTERISTICS, it Caie Temperature (Tc) • 2S°C unleo otherwise specified. CHARACTERISTIC Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On Voltage Static Drain-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Oft Delay Time Fall Time , Thermal Resistance Junctlon-to-Caaa SYMBOL BVoss Vas(th) loss loss VM(on)« ro»(on)a gt.a CIH CM, td(on) ta(off) ti R«JC TEST CONDITIONS lo = 1 mA Voa = 0 Vos = VM lo = 1 mA VDS = 145 V V08 = 160V Tc = 125°C VDS - 145 V VDS = 160V V<a « ± 20 V Vos = 0 ID =12.5 A Vos = 10V ID = 25 A Vas = 10 V ID • 12.5 A Vos = 10V Vos -10V ID =12.5 A VDS • 25 V V™ = 0 V

• f = 1MHz Vos = 100V ID =12.5 A Rg.n=R01-5on Vas • 10V RFH25N1B, RFH25N20 Series LIMITS RFHZSN1S Mln. 180 40(typ) 150(typ) 300(typ) 120(typ) Max. 100 1.875 .15 3500 900 I 400 225 400 200 0.83 RFH25N20 Mln. 200 " — «(typ) 150(typ) 300(typ) 120(typ> Max. 100 1.875 .15
• — • 3500 900 400 225 400 200 0.83 UNITS V V /"A nA V n mho pF. ns
• c/w "Pulsed: Pulse duration = 300 /is max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS CHARACTERISTIC Diode Forward Voltage V50 • Reverse Recovery Time U TEST CONDITIONS IBO=12.5A IF = 4A, dir/di~100A//is LIMITS RFH2SN18 Mln. M«x. 1.4 300 (typ.) RFH2SN20 Mln. Max. 1.4 300 (typ.) UNITS V ns ' Pulse Test: Width < 300 ps. Duty cycle a 2%.