RDA5876 RDA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 22
Technical content
Copyright © RDA Microelectronics Inc. 2009. All rights are reserved. RDA5876 SINGLE CHIP FOR BLUETOOTH & FM RADIO TUNER Rev.1.2–07.2011
1 General Description
RDA5876 integrates industry-lead Bluetooth and FM radio tuner into one chip and is optimized for mobile applications. Bluetooth and FM can work simultaneously and independently, with low power consumption levels target to battery powered devices. For the highest integration level, the required board space has been minimized and customer cost has been reduced. Manufacturers can easily and fast integrate RDA5876 on their product to enable a rapid time to market. RDA5876 uses CMOS process with a compact 4*4mm 32-pin QFN package.
1.1 Bluetooth Features
z CMOS single-chip fully-integrated radio and baseband z Compliant with Bluetooth 2.1 + EDR specification z Bluetooth Piconet and Scatternet support z ARM7-based microprocessor with on-chip ROM and RAM z Meet class 2 and class 3 transmitting power requirement, support class1 operation with external power amplifier z Provides +10dbm transmitting power z NZIF receiver with -90dBm sensitivity z Battery power supply directly with internal LDO z Support DCXO with internal oscillator circuit z Up-to 4Mbps high speed UART HCI support z Support AFH z Support 3-wire WIFI Co-existence handshake signals z Low power consumption z Minimum external component z Internal 32k LPO. GND PAD RDA5876
32 Pins
AGPIO0/BT_ACTIVE UART_RX FM_IP NC PCM_CLK PCM_SYNC PCM_DOUT PCM_DIN 161514131211109 VOUT18 NC RF DCDC_SW NC FM_IN AGPIO1/BT_PRIORITY VIO Figure1-1. RDA5876 Top View
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 2 of 22
1.2 FM Features
z CMOS single-chip fully-integrated FM tuner z Low power consumption ¾ Total current consumption lower than 20mA at 3.0V power supply z Support worldwide frequency band ¾ 50 -115 MHz z Support flexible channel spacing mode ¾ 100KHz, 200KHz, 50KHz and 25KHz z Support RDS/RBDS z Digital low-IF tuner ¾ Image-reject down-converter ¾ High performance A/D converter ¾ IF selectivity performed internally z Fully integrated digital frequency synthesizer ¾ Fully integrated on-chip RF and IF VCO ¾ Fully integrated on-chip loop filter z Autonomous search tuning z Support 32.768KHz crystal oscillator z Digital auto gain control (AGC) Digital adaptive noise cancellation ¾ Mono/stereo switch ¾ Soft mute ¾ High cut
1.3 Applications
z MP3,MP4 and PMP z PDA z Cordless phone z Programmable de-emphasis (50/75 μs) z Receive signal strength indicator (RSSI) z Bass boost z Volume control z Line-level analog output voltage z I2C control bus interface z Directly support 32Ω resistance loading z Integrated LDO regulator ¾ 1.8 to 5.5 V operation voltage
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 3 of 22
2 Table of Contents
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 4 of 22
3 Bluetooth Section Functional Description
Figure3-1. RDA5876 Bluetooth Block Diagram RDA5876 is designed for use in UART HCI with ha ndset chipsets. As shown in Figure3-1, RDA5876 integrates radio unit, baseband core, ARM7 core and memory which provides a complete lower Bluetooth protocol stack including the LC, LM and HCI interface.
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 5 of 22
4 Bluetooth Section Features
Radio ♦ Build-in TX/RX switch ♦ Fully integrated synthesizer without any external component ♦ Support DCXO or external reference clock direct input ♦ Class2 and class3 transmit output power supported and over 30dB dynamic control range ♦ Supports π/4 DQPSK and 8DPSK modulation ♦ High performance in receiver sensitivity and over 80dB dynamic range ♦ Integrated channel filter Auxiliary features ♦ On-chip regulator to support battery power supply directly ♦ Power management support low power mode ♦ Support share handset system reference clock ♦ Support 3-wire wifi cooperation handshake protocol ♦ Support external class1 PA and antenna switch Baseband ♦ Internal RAM allows fully speed data transfer, mixed voice and data, and fully piconet operation ♦ Logic for forward error correction, header e rror control, access co de correlation, CRC, demodulation , encryption bit stream generation, whitening and transmit pulse shaping ♦ Support eSCO and AFH ♦ Support up to Bluetooth v2.1 + EDR ♦ Support A-law, μ-law and CVSD digitize audio CODEC in PCM interface Interface ♦ Provides UART HCI interface, up-to 4Mbps ♦ Provides I2C interface for host to do configuration ♦ Provides PCM audio interface ♦ Provides 3-wire and 2-wire WIFI Co-existence handshake interface Bluetooth Stack ♦ Compliant with Bluetooth 2.1 + EDR specification
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 6 of 22
5 Bluetooth Section Electrical Characteristics
Table 5-1 DC Electrical Specificati on (Recommended Operation Conditions): SYMBOL DESCRIPTION MIN TYP MAX UNIT VBAT Supply Voltage from battery or LDO 3.3 4.0 4.2 V Tamb Ambient Temperature -20 27 +50 ℃ VIL CMOS Low Level Input Voltage 0 0.3*VIO V VIH CMOS High Level Input Voltage 0.7*VIO VIO V VTH CMOS Threshold Voltage 0.5*VIO V Notes: 1. VIO=1.8~3.3V Table 5-2 DC Electrical Specificat ion (Absolute Maximum Ratings): SYMBOL DESCRIPTION MIN TYP MAX UNIT Tamb Ambient Temperature -20 +80 °C IIN Input Current -10 +10 mA VIN Input Voltage -0.3 VIO+0.3 V Vlna LNA Input Level +10 dBm Table 5-3 LDO Power consumption specification (VBAT = 4.0 V, VIO = 2.8V, TA = +27℃, RF 9dBm, LDO mode unless otherwise specified) STATE DESCRIPTION Condition TYP UNIT Headset voice HV3 type 18 mA Headset SNIFF 500ms cycle NO INQUIRE and PAGE SCAN 0.5 mA HCI only active 5.7 mA Both SCAN 1.28S cycle INQUIRE and PAGE SCAN 1.0 mA DeepSleep 26Mhz crystal off Ivbat=105uA,Ivio=13uA,External 32K input 118 μA internal LDO off LDO_ON off Ivbat=6uA,Ivio=1uA 7 μA
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 7 of 22 Table5-4 DCDC Power consumption specification (VBAT = 4.0 V, VIO = 2.8V, TA = +27 , ℃ RF 9dBm, DCDC mode unless otherwise specified) STATE DESCRIPTION Condition TYP UNIT Headset voice HV3 12 mA Headset SNIFF 500ms cycle NO INQUIRE and PAGE SCAN 0.5 mA HCI only active 3.8 mA Both SCAN 1.28S cycle INQUIRE and PAGE SCAN 0.8 mA DeepSleep 26Mhz crystal off Ivbat=105uA,Ivio=13uA, External 32K input 118 μA internal LDO off LDO_ON off Ivbat=6uA,Ivio=1uA 7 μA
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 8 of 22
6 Bluetooth Section Radio Characteristics
(VBAT = 4.0 V, TA = 27°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT General specifications Sensitivity @0.1% BER / -90 / dBm Maximum received signal@0.1% BER 0 / / dBm C/I c-channel / +10 / dB F=F0 + 1MHz / / -5 dB F=F0 - 1MHz / / 0 dB F=F0 + 2MHz / / -33 dB F=F0 - 2MHz / / -30 dB F=F0 + 3 MHz / / -45 dB Adjacent channel selectivity C/I F=F0 - 3MHz / / -40 dB Adjacent channel selectivity C/I F=F image / / 0 dB 30MHz–2000MHz -10 / / dBm 2000MHz–2400MHz -27 / / dBm 2500MHz–3000MHz -27 / / dBm Out-of-band blocking performance 3000MHz–12.5GHz -10 / / dBm Intermodulation -35 / / dBm Spurious output level -150 / / dBm/Hz Notes: (VBAT = 4.0V, TA = 27 °C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT General specifications Maximum RF transmit power / +10 / dBm RF power control range 30 / / dB 20dB band width / 0.9 / MHz F=F0 + 1MHz / -35 / dBm F=F0 - 1MHz / -34 / dBm F=F0 + 2MHz / -55 / dBm F=F0 - 2MHz / -55 / dBm F=F0 + 3MHz / -58 / dBm F=F0 - 3MHz / -58 / dBm Adjacent channel transmit power F=F0 + >3MHz -58 / / dBm
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 9 of 22 F=F0 - >3MHz -58 / / dBm △f1avg Maximum modulation / 164 / kHz △f2max Minimum modulation / 145 / kHz △f2avg/△f1avg 0.80 / / / ICFT / +4 / kHz Drift rate / 0.1 / kHz/50us Drift (1 slot packet) / -2 / kHz Drift (5 slot packet) / -2 / kHz Notes: (VBAT = 4.0 V, TA = 27°C, unless otherwise specified) PARAMETER CONDITIONS MIN TYP MAX UNIT π/4 DQPSK Sensitivity @0.01% BER / -87 / dBm Maximum received signal@0.1% BER 0 / / dBm C/I c-channel / / +13 dB F=F0 + 1MHz / / +5 dB F=F0 - 1MHz / / 0 dB F=F0 + 2MHz / / -30 dB F=F0 - 2MHz / / -20 dB F=F0 + 3MHz / / -40 dB Adjacent channel selectivity C/I F=F0 - 3MHz / / -40 dB Adjacent channel selectivity C/I F=F image / / -7 dB 8DPSK Sensitivity @0.01% BER / -81 / dBm Maximum received signal@0.1% BER 0 / / dBm C/I c-channel / / +18 dB F=F0 + 1MHz / / +5 dB F=F0 - 1MHz / / +5 dB F=F0 + 2MHz / / -25 dB F=F0 - 2MHz / / -13 dB F=F0 + 3MHz / / -33 dB Adjacent channel selectivity C/I F=F0 - 3MHz / / -33 dB Adjacent channel selectivity C/I F=F image / / 0 dB Notes:
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 10 of 22 (VBAT = 4.0 V, TA = 27°C, unless otherwise specified) PARAMETER CONDITIONS MIN TYP MAX UNIT General specifications Maximum RF transmit power / +7 / dBm Relative transmit control / -1.6 / dB kHz π/4 DQPSK max w0 / +7.4 / kHz π/4 DQPSK max wi / +6.7 / kHz π/4 DQPSK max |wi + w0| / +2.4 / kHz 8DPSK max w0 / +7.1 / kHz 8DPSK max wi / +4.4 / kHz 8DPSK max |wi + w0| / +2.7 / kHz RMS DEVM / 8 / % 99% DEVM / / 30 % π/4 DQPSK Modulation Accuracy Peak DEVM / 16 / % RMS DEVM / 8 / % 99% DEVM / / 20 % 8DPSK Modulation Accuracy Peak DEVM / 16 / % F=F0 + 1MHz / -14.7 / dBm F=F0 - 1MHz / -15.2 / dBm F=F0 + 2MHz / -51.0 / dBm F=F0 - 2MHz / -52.2 / dBm F=F0 + 3MHz / -55.5 / dBm F=F0 - 3MHz / -55.8 / dBm In-band spurious emissions F=F0 +/- > 3MHz / / -55 dBm EDR Differential Phase Coding / 100 / % Notes:
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 11 of 22
7 FM Section Functional Description
I ADC L DAC R DAC Q ADC Audio DSP Core digital filter MPX decoder stereo/mono audio VCO Synthesizer GPIO Interface Bus RSSI VIO SDIO SCLK MCU GPIO LOUT ROUT LNAN LNAP RCLK 2.7-5.5 V
32.768 KHz
I PGA Q PGA RDS /RBDS Figure 7-1. RDA5876 FM Tuner Block Diagram FM Receiver The receiver uses a digital low-IF architecture that avoids the difficulties associated with direct conversion while delivering lower solution cost and reduces complexity, and integrates a low noise amplifier (LNA) supporting the FM broadcast band (50 to 115MHz), a quadrature image-reject mixer, a programmable gain control (PGA), a high resolution analog-to-digital converters (ADCs), an audio DSP and a high- fidelity digital-to-analog converters (DACs). The LNA has differential input ports (LNAP and LNAN) and supports any input port by set according registers bits (LNA_port_sel[1:0]). It default input common mode voltage is GND. The limiter prevents overloading and limits the amount of intermodulation products created by strong adjacent channels. The quadrature mixer down converts the LNA output differential RF signal to low-IF, it also has image-reject function. The PGA amplifies the mixer output IF signal and then digitized with ADCs. The DSP core finishes the channel selection, FM demodulation, stereo MPX decoder and output audio signal. The MPX decoder can autonomous switch from stereo to mono to limit the output noise. The DACs convert digital audio signal to analog and change the volume at same time. The DACs has low-pass feature and -3dB frequency is about 30 KHz. Synthesizer The frequency synthesizer generates the local oscillator signal which divide to quadrature, then be used to downconvert the RF input to a constant low intermediate frequency (IF). The synthesizer reference clock is 32.768 KHz. The synthesizer frequency is defined by bits CHAN[9:0] with the range from 50MHz to 115MHz.
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 12 of 22 Power Supply The RDA5876 FM section integrated LDO which supplies power to the chip. The external supply voltage range is 1.8-5.5 V. RESET and Control Interface select The RDA5876 FM section is RESET itself When VIO is Power up. And also support soft reset by trigger 02H BIT1 from 0 to 1. The control interface is I2C. Control Interface The I2C interface is compliant to I2C Bus Specification 2.1. It includes two pins: SCL and SDA. A I2C interface transfer begins with START condition, a command byte and data bytes, each byte has a followed ACK (or NACK) bit, and ends with STOP condition. The command byte includes a 7-bit chip address (0010000b) and a R/W bit. The ACK (or NACK) is always sent out by receiver. When in write transfer, data bytes is written out from MCU, and when in read transfer, data bytes is read out from RDA5876. There is no visible register address in I2C interface transfers. The I2C interface has a fixed start register address (0x02h for write transfer and 0x0Ah for read transfer), and an internal incremental address counter. If register address meets the end of register file, 0x3Ah, r egister address will wrap back to 0x00h. For write transfer, MCU programs registers from register 0x02h high byte, then register 0x02h low byte, then register 0x03h high byte, till the last register. RDA5876 always gives out ACK after every byte, and MCU gives out STOP condition when register programming is finished. For read transfer, after command byte from MCU, RDA5876 sends out register 0x0Ah high byte, then register 0x0Ah low byte, then register 0x0Bh high byte, till receives NACK from MCU. MCU gives out ACK for data bytes besides last data byte. MCU gives out NACK for last data byte, and then RDA5876 will return the bus to MCU, and MCU will give out STOP condition. Details please refer to RDA5876 Programming Guide and RDA5802N Programming Guide and Datasheet. I 2S Audio Data Interface The RDA5876 supports I 2S (Inter_IC Sound Bus) audio interface. The interface is fully compliant with I 2S bus specification. When setting I2SEN bit high, RDA5876 will output SCK, WS, SD signals from GPIO_FM3, GPIO_FM1, GPIO_FM2 as I master and transmitter, the sample rate is 48Kbps ， 44.1kbps,32kbps….. RDA5876 also support as I 2S slaver mode and transmitter, the sample rate is less than 100kbps.
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 13 of 22
8 FM Section Electrical Characteristics
Table 8-1 DC Electrical Specification (Recommended Operation Conditions): SYMBOL DESCRIPTION MIN TYP MAX UNIT VBAT Supply Voltage 3.3 4.0 4.2 V VIO Interface Supply Voltage 1.5 3.0 3.6 V Tamb Ambient Temperature -20 27 +75 ℃ VIL CMOS Low Level Input Voltage 0 0.3*VIO V VIH CMOS High Level Input Voltage 0.7*VIO VIO V VTH CMOS Threshold Voltage 0.5*VIO V Notes: 1. VIO=1.8~3.3V Table 8-2 DC Electrical Specification (Absolute Maximum Ratings): SYMBOL DESCRIPTION MIN TYP MAX UNIT VIO Interface Supply Voltage -0.5 +3.6 V Tamb Ambient Temperature -40 +90 °C IIN Input Current (1) -10 +10 mA VIN Input Voltage(1) -0.3 VIO+0.3 V Vlna LNA FM Input Level +10 dBm Notes: 1. For Pin: SCL, SDA Table 8-3 Power Consumption Specification (VBAT = 4.0 V, VIO=1.5 to 3.6V, TA = -25 to 85 , unless otherwise specified)℃ SYMBOL DESCRIPTION Condition TYP UNIT IA Analog Supply Current ENABLE=1 20 mA IVIO Interface Supply Current SCL and SDA inactive 90 μA IAPD Analog Powerdown Current ENABLE=0 5 μA IVIO Interface Powerdown Current ENABLE=0 10 μA
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 14 of 22
9 FM Section Receiver Characteristics
Table 9-1 Receiver Characteristics (VBAT = 4.0 V, VIO= 3.0V, TA = 25 °C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT General specifications Fin FM Input Frequency Range Adjust BAND Register 50 115 MHz 50MHz - 1.4 1.8 65MHz - 1.2 1.5 88MHz - 1.2 1.5 98MHz - 1.3 1.5 108MHz - 1.3 1.5 Vrf Sensitivity1,2,3 S/N=26dB 115MHz - 1.3 1.8 μV EMF IP3in Input IP34 AGCD=1 80 - - dBμV αam AM Suppression1,2 m=0.3 60 - - dB S200 Adjacent Channel Selectivity ±200KHz 50 70 - dB S400 400KHz Selectivity ±400KHz 60 85 - dB VAFL; VAFR Audio L/R Output Voltage1,2 (Pins LOUT and ROUT) Volume [3:0] =1111 - 360 - mV Mono2 55 57 - S/N Maximum Signal to Noise Ratio1,2,3,5 Stereo6 53 55 - dB αSCS Stereo Channel Separation 35 - - dB RL Audio Output Loading Resistance Single-ended 32 - - Ω Rload=1KΩ - 0.15 0.2 THD Audio Total Harmonic Distortion1,3,6 Volume[3:0] =1111 Rload=32Ω - 0.2 - αAOI Audio Output L/R Imbalance1,6 - - 0.05 dB Rmute Mute Attenuation Ratio1 Volume[3:0]=0000 60 - - dB Low Freq9 - 100 - BWaudio Audio Response1 1KHz=0dB ±3dB point High Freq - 14 - Hz Pins LNAN, LNAP, LOUT, ROUT and NC(22,23) Vcom_rfin Pins LNAN/LNAP Input Common Mode Voltage 0 V Vcom Audio Output Common Mode Voltage8 1.0 1.05 1.1 V Vcom_nc Pins NC ( 22,23 ) Common Mode Voltage Floating V Notes:1. Fin=65 to 115MHz; Fmod=1KHz; de-emphasis=75μs; MONO=1; L=R unless noted otherwise; 2. Δf = 2 2 . 5 K H z ; 3 . BAF = 300Hz to 15KHz, RBW <=10Hz; 4. |f 2-f1|>1MHz, f0=2xf1-f2, AGC disable, Fin=76 to 108MHz; 5. PRF=60dBUV ; 6 . Δf=75KHz,fpilot=10% 7. Measured at V EMF = 1 m V, f RF = 65 to 108MHz 8. At LOUT and ROUT pins 9. Adjustable
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 15 of 22
10 Pins Description
AGPIO0/BT_ACTIVE XTAL XIN UART_RX FM_IP NC FM_OUTL VOUT12 FM_OUTR HOST_WAKE PCM_CLK PCM_SYNC PCM_DOUT PCM_DIN 161514131211109 VOUT18 I2C_SCL XEN_OUT NC RF UART_TX DCDC_SW NC FM_IN AGPIO1/BT_PRIORITY VIO XIN_32K LDO_ON VBAT I2C_SDA NC NC GPIO2/ WLAN_ACTIVE Figure10-1. RDA5876 Top View
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 16 of 22 Table 10-1 RDA5876 Pins Description PIN NO. DESCRIPTION UART_RX 1 UART data input PCM_DOUT 2 Synchronous data output PCM_DIN 3 Synchronous data input PCM_CLK 4 Synchronous data clock PCM_SYNC 5 Synchronous data sync VIO 6 IO power supply VOUT18 7 Analog voltage output, connected with decouple capacitor DCDC_SW 8 Internal DC/DC switch voltage output VBAT 9 Bluetooth and FM power supply XIN_32K 10 32.768K clock input or external 32.768K crystal I2C_SDA 11 I2C interface Data signal I2C_SCL 12 I2C interface Clock signal XEN_OUT 13 Clock request output XIN 14 For 26Mhz crystal input or external clock input XTAL 15 For 26Mhz crystal input LDO_ON 16 Internal LDO power on NC 17 Should be not connected NC 18 Should be not connected RF 19 Bluetooth Radio signal AGPIO0 20 Programmable I/O Also used ad bt_active when using WIFI co-existence handshake interface. AGPIO1 21 Programmable I/O. Also used as bt_priority when using WIFI co-existence handshake interface. FM_IN 22 LNA input port. For single-ended input, LNAN should be connected to RFGND FM_IP 23 LNA input port. For single-ended input, LNAN should be connected to RFGND NC 24 Connect to ground NC 25 Should be not connected NC 26 Connect to ground FM_OUTR 27 Right audio output FM_OUTL 28 Left audio output VOUT12 29 Digital voltage output, connected with decouple capacitor GPIO2 30 Programmable I/O. Also used as wl_active when using WIFI co-existence handshake interface. HOST_WAKE 31 Output to wakeup host UART_TX 32 UART data output
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 17 of 22 Figure 11.1 Application schematic 1) AGPIO0, AGPIO1, GPIO2 connect to GND. 2) L5 4.7uH only for DCDC mode, LDO mode NC .
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 18 of 22 Figure12-1illustratesthepackage details for the RDA5876. The package is lead-free and RoHS-compliant.
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 19 of 22 Figure12-1. 32-Pin 4x4 Quad Flat No-Lead (QFN)
13 PCB Land Pattern
Figure13-3.Classification Reflow Profile Table 13-1 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average Ramp-Up Rate (TSmax to Tp) 3 ℃/second max. 3 ℃/second max. Preheat -Temperature Min (Tsmin) -Temperature Max (Tsmax) -Time (tsmin to tsmax) 100 ℃ 100 ℃ 60-120 seconds 150 ℃ 200 ℃ 60-180 seconds Time maintained above: -Temperature (TL) -Time (tL) 183 ℃ 60-150seconds 217℃ 60-150 seconds Peak /Classification Temperature(Tp) See Table 9-2 See Table 9-3 Time within 5 oC of actual Peak Temperature (tp) 10-30 seconds 20-40 seconds Ramp-Down Rate 6 ℃/second max. 6 ℃/seconds max. Time 25 oC to Peak 6 minutes max. 8 minutes max.
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 20 of 22 Temperature Table 13-2 Pb-free Process – Package Peak Reflow Temperatures Package Thickness Volume mm3 <350 Volume mm3 ≥350 Table 13-3 Pb-free Process – Package Classification Reflow Temperatures Package Thickness Volume mm3 ＜350 Volume mm3 350-2000 Volume mm3 ＞2000 1.6mm – 2.5mm 260 + 0 ℃ * 250 + 0 ℃ * 245 + 0 ℃ * *Tolerance : The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature(this mean Peak reflow temperature + 0 ℃. For example 260+ 0 ℃ ) at the rated MSL Level. Note 1: All temperature refer topside of the package. Measured on the package body surface. Note 2: The profiling tolerance is + 0 ℃, - X ℃ (based on machine variation capability)whatever is required to control the profile process but at no time will it exceed – 5 ℃. The producer assures process compatibility at the peak reflow profile temperatures defined in Table 13-3. Note 3: Package volume excludes external terminals(balls, bumps, lands, leads) and/or non integral heat sinks. Note 4: The maximum component temperature reached during reflow depends on package the thickness and volume. The use of convection reflow processe s reduces the thermal gradients between packages. However, thermal gradients due to differences in thermal mass of SMD package may sill exist. Note 5: Components intended for use in a “lead-free” assembly process shall be evaluated using the “lead free” classification temperatures and profiles defined in Table13-1, 13-2, 13-3 whether or not lead free. RoHS Compliant The product does not contain lead, mercury, cadmiu m, hexavalent chromium, polybrominated biphenyls (PBB) or polybrominated biphenyl ethers (PBDE), and are therefore considered RoHS compliant. ESD Sensitivity Integrated circuits are ESD sensitive and can be dam aged by static electricity. Proper ESD techniques should be used when handling these devices.
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 21 of 22
14 Change List
REV DATE AUTHER CHANGE DESCRIPTION V1.0 03/25/2011 Gibson Initial version. V1.1 07/01/2011 Daihongjun Modify 24pin,25pin, 26pin PIN name Modify the Application Circuit V1.2 09/20/2011 Daihongjun Modify 27pin,28pin, PIN name
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2 Page 22 of 22
15 Contact Information
RDA Microelectronics, Inc. Suite 302 Building 2, 690 Bibo Road Pudong District, Shanghai Tel: 86-21-50271108 Fax: 86-21-50271099 Postal Code: 201203 Suite 1108 Block A, e-Wing Center, 113 Zhichun Road Haidian District, Beijing Tel: 86-10-62635360 Fax: 86-10-82612663 Postal Code: 100086 2501 Room, District A, XiNian Center, 6021 ShenNan Road, Nanshan District, Shenzhen. Tel: 86-755- 86187018 Fax: 86-755- 33395366 Postal Code: 518057